Search Results - "Goudena, E.J.G."

Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling by Nanver, L.K., Schellevis, H., Scholtes, T.L.M., La Spina, L., Lorito, G., Sarubbi, F., Gonda, V., Popadic, M., Buisman, K., de Vreede, L.C.N., Cong Huang, Milosavljevic, S., Goudena, E.J.G.

“…This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted…”
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Sub-500/spl deg/C solid-phase epitaxy of ultra-abrupt p/sup +/-silicon elevated contacts and diodes by Civale, Y., Nanver, L.K., Hadley, P., Goudena, E.J.G., Schellevis, H.

“…A well-controlled low-temperature process, demonstrated from 350/spl deg/C to 500/spl deg/C, has been developed for epitaxially growing elevated contacts and…”
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Sub-500 °C solid-phase epitaxy of ultra-abrupt p+-silicon elevated contacts and diodes by CIVALE, Yann, NANVER, Lis K, HADLEY, Peter, GOUDENA, Egbert J. G, SCHELLEVIS, Hugo

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Design and fabrication of infrared detector arrays for satellite attitude control by van Herwaarden, A.W., van Herwaarden, F.G., Molenaar, S.A., Goudena, E.J.G., Laros, M., Sarro, P.M., Schot, C.A., van der Vlist, W., Blarre, L., Krebs, J.P.

“…This paper describes the design, modelling and fabrication of infrared detectors for attitude control systems (ACS) for satellites. After a short introduction…”
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Optimization of fully-implanted NPNs for high-frequency operation by Nanver, L.K., Goudena, E.J.G., van Zeijl, H.W.

“…With a very straightforward (low-cost) process flow as basis, fully-implanted washed-emitter-base (WEB) NPNs have been optimized for operation in the 10-30 GHz…”
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Bipolar integrated Kelvin test structure for contact resistance measurement of self-aligned implantations by Nanver, L.K., Goudena, E.J.G., Slabbekoorn, J.

“…A Kelvin contact resistance test structure has been developed for accurate measurement of highly-doped, shallow n/sup +/ and p/sup +/ implantations, which are…”
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High-Frequency SiGe HBT's with Implanted Emitters by Nanver, L.K., Goudena, E.J.G., Visser, C., van Zeijl, H.W., Slotboom, J.W.

“…A method is presented by which the implantation damage induced transient enhanced diffusion of boron and phosphorus is used to fabricate high-frequency SiGe…”
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High-speed, high-quality WEB NPN transistors with phosphorus emitters by Nanver, L.K., Goudena, E.J.G., van Zeijl, H.W.

“…Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The…”
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Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/microwave technology by Nanver, L.K., Gonda, V., Civale, Y., Scholtes, T.L.M., La Spina, L., Schellevis, H., Lorito, G., Sarubbi, F., Popadic, M., Buisman, K., Milosavljevic, S., Goudena, E.J.G.

“…This paper reviews several novel process modules developed for the processing of the backside of the wafer of our substrate-transfer technology called…”
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Design considerations for integrated high-frequency p-channel JFETs by Nanver, L.K., Goudena, E.J.G.

“…To achieve high-frequency performance of integrated p-channel JFETs, the large substrate capacitance is decoupled by separating the top gate from the bottom…”
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Silicon-on-glass technology for RF and microwave device fabrication by Nanver, Lis K., Schellevis, H., Scholtes, T.L.M., La Spina, L., Lorito, G., Sarubbi, F., Gonda, V., Popadic, M., Buisman, K., de Vreede, L.C.N., Huang, C., Milosavljevic, S., Goudena, E.J.G.

“…This paper reviews the applications and potentials of back-wafer contacted silicon-on-glass (SOG) substrate-transfer technology (STT) particularly for RF and…”
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RF/microwave device fabrication in silicon-on-glass technology by Nanver, L.K., Schellevis, H., Scholtes, T.L.M., La Spina, L., Lorito, G., Sarubbi, F., Gonda, V., Popadic, M., Buisman, K., de Vreede, L.C.N., Huang, C., Milosavljevic, S., Goudena, E.J.G.

“…This paper reviews recent developments in circuit and device implementations based on back-wafer contacted silicon-on-glass (SOG) substrate-transfer technology…”
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Kelvin test structure for measuring contact resistance of shallow junctions by Nanver, L.K., Goudena, E.J.G., Slabbekoorn, J.

“…A Kelvin contact resistance test structure has been developed for accurate and direct measurement of highly-doped shallow n/sup +/ and p/sup +/ junctions,…”
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