Search Results - "Goto, Seiki"

60GHz High Isolation SPDT MMIC switches using shunt pHEMT resonator by Yoshihiro Tsukahara, Hirotaka Amasuga, Seiki Goto, Tomoki Oku, Takahide Ishikawa

“…This paper describes the successful development of a 60GHz high isolation SPDT MMIC switch for wireless applications. In order to improve the isolation, the…”
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Comparison of Electroless Ni-P and Co-W-P Diffusion Properties Against GaAs Substrate by Nishizawa, Koichiro, Matsumoto, Ayumu, Nakagawa, Yasuyuki, Sakuma, Hitoshi, Goto, Seiki, Fukumuro, Naoki, Yae, Shinji

“…The thermal stability of electroless nickel-phosphorus (Ni-P) film and cobalt-tungsten–phosphorus (Co-W-P) film deposited on GaAs substrate was investigated…”
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Ku-Band 70-/30-W-Class Internally Matched GaN Power Amplifiers With Low IMD3 Over a Wide Offset Frequency Range of Up To 400 MHz by Yoshioka, Takaaki, Harauchi, Kenji, Sugitani, Takumi, Maehara, Hiroaki, Yamasaki, Takashi, Ichinohe, Hiroaki, Miyashita, Miyo, Yamamoto, Kazuya, Goto, Seiki

“…This study describes the Ku -band 70- and 30-W-class internally matched gallium nitride (GaN) power amplifiers (PAs) for multi-carrier satellite communications…”
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A Nonlinear Drain Resistance Model for a High Power Millimeter-wave PHEMT by Inoue, A., Amasuga, H., Goto, S., Kunii, T., Wong, M.R., del Alamo, J.A., Oku, T., Ishikawa, T.

“…A millimeter wave high power PHEMT model with a nonlinear drain resistance Rd is proposed. The nonlinear Rd arises from electron velocity saturation in the…”
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Effect of Bias Condition and Input Harmonic Termination on High Efficiency Inverse Class-F Amplifiers by Goto, Seiki, Kunii, Tetsuo, Ohta, Akira, Inoue, Akira, Hosokawa, Yoshihiro, Hattori, Ryo, Mitsui, Yasuo

“…The optimization of the operating bias condition and input harmonic termination is investigated for the practical circuit design of high efficiency inverse…”
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A 67% PAE, 100 W GaN power amplifier with on-chip harmonic tuning circuits for C-band space applications by Miwa, S., Kamo, Y., Kittaka, Y., Yamasaki, T., Tsukahara, Y., Tanii, T., Kohno, M., Goto, S., Shima, A.

“…This paper describes a high efficiency and high output power GaN power amplifier for C-band space applications. The amplifier uses on-chip harmonic tuned FETs…”
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A Ku-band 70-W Class GaN Internally Matched High Power Amplifier with Wide Offset Frequencies of up to 400 MHz for Multi-Carrier Satellite Communications by Yoshioka, Takaaki, Harauchi, Kenji, Sugitani, Takumi, Yamasaki, Takashi, Ichinohe, Hiroaki, Miyashita, Miyo, Yamamoto, Kazuya, Goto, Seiki

“…This paper describes a Ku-band 70-W class GaN internally matched high power amplifier (HPA) with wide offset frequencies of up to 400 MHz for multi-carrier…”
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Intermodulation distortion analysis of class-F and inverse class-F HBT amplifiers by Ohta, A., Inoue, A., Goto, S., Ueda, K., Ishikawa, T., Matsuda, Y.

“…The third-order intermodulation distortions (IM3s) of class-F and inverse class-F heterojunction bipolar transistor amplifiers were compared experimentally. It…”
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A Low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars by Kanaya, K, Amasuga, H, Watanabe, S, Yamamoto, Y, Kosaka, N, Miyakuni, S, Goto, S, Shima, A

“…To develop a low 1/f noise and high reliability InP/GaAsSb DHBT, experimental analyses on the recombination current have been carried out. The results show…”
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Low phase noise 77 GHz VCO with optimized terminated impedance at fundamental and second harmonic frequencies by Watanabe, S., Matsuzuka, T., Amasuga, H., Goto, S., Oku, T., Ishikawa, T.

“…This paper describes the phase noise reduction technique by controlling terminal impedance of fundamental and second harmonic frequencies in VCO. To achieve…”
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A V-Band High Power and High Gain Amplifier MMIC using GaAs PHEMT Technology by Shin Chaki, Amasuga, H., Goto, S., Kanaya, K., Yamamoto, Y., Oku, T., Ishikawa, T.

“…We report the performance of a V-band 5-stage high power amplifier MMIC using a millimeter-wave 0.1 mum GaAs pHEMT. It has demonstrated that an output power of…”
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The efficiency of class-F and inverse class-F amplifiers by Inoue, A., Ohta, A., Goto, S., Ishikawa, T., Matsuda, Y.

“…The efficiency of class-F and inverse class-F amplifiers are studied using measurements and theories. At high quiescent current, inverse class-F amplifiers…”
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Efficiency enhancement of Doherty amplifier with combination of class-F and inverse class-F schemes for S-band base station application by Goto, S., Kunii, T., Inoue, A., Izawa, K., Ishikawa, T., Matsuda, Y.

“…A new efficiency enhancement technique for the Doherty amplifier for use in S-band base stations is presented. The proposed technique includes a scheme in…”
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A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance by Amasuga, H., Inoue, A., Goto, S., Kunii, T., Yamamoto, Y., Oku, T., Ishikawa, T.

“…A new GaAs pHEMT structure, which has achieved both high power density and high breakdown voltage for millimeter-wave amplifiers, is presented. According to…”
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A high power density TaN/Au T-gate pHEMT with high humidity resistance for Ka-Band applications by Amasuga, H., Goto, S., Shiga, T., Totsuka, M., Kunii, T., Oku, T., Ishikawa, T., Matsuda, Y.

“…A 0.8 W/mm high power pHEMT with high humidity resistance is reported. By using tantalum nitride as the refractory gate metal and a silicon nitride layer…”
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A Low Distortion 25 W Class-F Power Amplifier Using Internally Harmonic Tuned FET Architecture for 3.5 GHz OFDM Applications by Goto, S., Kunii, T., Oue, T., Izawa, K., Inoue, A., Kohno, M., Oku, T., Ishikawa, T.

“…An ultra low distortion class-F power amplifier for base stations of broadband access systems is presented. This amplifier adopts internally harmonic tuned FET…”
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An Efficient Preparative Route to 7-Ethyl-1H-furo[2,3-g]indazole by Shimada, Itsuro, Maeno, Kyoichi, Kimizuka, Tetsuya, Goto, Seiki, Takahashi, Takumi, Nakamura, Atsushi, Miyafuji, Akio, Tsukamoto, Shin-ichi, Sakamoto, Shuichi

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A high efficiency, high voltage, balanced cascode FET by Inoue, A., Goto, S., Kunii, T., Ishikawa, T., Matsuda, Y.

“…A high efficiency, high operating voltage GaAs HFET is presented. A balanced cascode circuit without RF feedback, which achieves the high PAE of 78.2% at…”
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Stability analysis and layout design of an internally stabilized multi-finger FET for high-power base station amplifiers by Goto, S., Kunii, T., Fujii, K., Inoue, A., Sasaki, Y., Hosokawa, Y., Hattori, R., Ishikawa, T., Matsuda, Y.

“…A high-power, discrete, and internally-matched FET, such as for use in base station amplifiers, consists of lots of gate fingers to realize a very large…”
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A Nonlinear Drain Resistance pHEMT model for Millimeter-wave High Power Amplifiers by Inoue, A., Amasuga, H., Goto, S., Miyazaki, M.

“…A high power pHEMT with longer drain-gate separation can operate at higher voltage. However, it shows large output power loss at millimeter-wave in addition to…”
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