Search Results - "Gosmeyer, C.D."

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  1. 1
    Development of the self-aligned titanium silicide process for VLSI applications

    Development of the self-aligned titanium silicide process for VLSI applications by Alperin, M.E., Holloway, T.C., Haken, R.A., Gosmeyer, C.D., Karnaugh, R.V., Parmantie, W.D.

    Published in IEEE transactions on electron devices (01-02-1985)
    “…A manufacturable self-aligned titanium silicide process which simultaneously silicides both polysilicon gates and junctions has been developed for VLSI…”
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  2. 2
    Development of the Self-Aligned Titanium Silicide Process for VLSI Applications

    Development of the Self-Aligned Titanium Silicide Process for VLSI Applications by Alperin, M.E., Hollaway, T.C., Haken, R.A., Gosmeyer, C.D., Karnaugh, R.V., Parmantie, W.D.

    Published in IEEE journal of solid-state circuits (01-02-1985)
    “…A manufacturable self-aligned titanium silicide process which simultaneously silicides both polysilicon gates and junctions has been developed for VLSI…”
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    VB-1 a VLSI suitable 2-µm stacked CMOS process

    VB-1 a VLSI suitable 2-µm stacked CMOS process by Malhi, S.D.S., Karnaugh, R., Shah, A.H., Hite, L., Chatterjee, P.K., Davis, H.E., Mahant-Shetti, S.S., Gosmeyer, C.D., Sundaresan, R.S., Chen, C.E., Lam, H.W., Haken, R.A., Pinizzotto, R.F., Hester, R.K.

    Published in IEEE transactions on electron devices (01-12-1984)
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