Search Results - "Gosele, U"

Wafer Direct Bonding: From Advanced Substrate Engineering to Future Applications in Micro/Nanoelectronics by Christiansen, Silke H., Singh, Rajendra, Gosele, Ulrich

“…Wafer direct bonding refers to the process of adhesion of two flat mirror-polished wafers without using any intermediate gluing layers in ambient air or vacuum…”
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Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes by Li, Na, Tan, Teh Y., Gösele, U.

“…The transition region width of nanowire heterojunctions and pn-junctions grown using vapor–liquid–solid (VLS) processes has been modeled. With two constituents…”
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Porous silicon formation : a quantum wire effect by LEHMANN, V, GÖSELE, U

“…Porous silicon layers grown on nondegenerated p-type silicon electrodes in hydrofluoric acid electrolytes are translucent for visible light, which is…”
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Growth, Thermodynamics, and Electrical Properties of Silicon Nanowires by Schmidt, V, Wittemann, J. V, Gösele, U

“…Schmidt et al discuss the electrical properties, thermodynamics and growth of silicon nanowires…”
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Synthesis of epitaxial Si(100) nanowires on Si(100) substrate using vapor-liquid-solid growth in anodic aluminum oxide nanopore arrays by SHIMIZU, T, SENZ, S, SHINGUBARA, S, GOSELE, U

“…The synthesis of epitaxial Si nanowires with growth direction parallel to Si [100] on Si(100) substrate was demonstrated using a combination of anodic aluminum…”
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Chemical tension and global equilibrium in VLS nanostructure growth process : from nanohillocks to nanowires by LI, N, TAN, T. Y, GOSELE, U

“…We formulate a global equilibrium model to describe the growth of one-dimensional nanostructures in the VLS process by including also the chemical tension in…”
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Silicon-Based Photonic Crystals by Birner, A., Wehrspohn, R. B., Gösele, U. M., Busch, K.

“…Photonic crystals can be thought of as optical analogues of semiconductors. Here recent advances in photonic crystals based on silicon are reviewed. After…”
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Hollow nanostructures based on the Kirkendall effect: Design and stability considerations by Tu, K. N., Gösele, U.

“…In nanoscale interdiffusion and reaction, a Kirkendall void in the core of a nanocrystal has been proposed to explain the formation of hollow nanosize…”
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Silicon Nanocrystals: Size Matters by Heitmann, J., Müller, F., Zacharias, M., Gösele, U.

“…This paper reviews new approaches to size‐controlled silicon‐nanocrystal synthesis. These approaches allow narrowing of the size distribution of the…”
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Polymer Nanotubes by Wetting of Ordered Porous Templates by Steinhart, M., Wendorff, J. H., Greiner, A., Wehrspohn, R. B., Nielsch, K., Schilling, J., Choi, J., Gösele, U.

“…Steinhart et al propose a simple technique for the fabrication of polymer nanotubes with a monodisperse size distribution and uniform orientation…”
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Influence of the Si/SiO2 interface on the charge carrier density of si nanowires by SCHMIDT, V, SENZ, S, GÖSELE, U

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Epitaxial vapor-liquid-solid growth of silicon nano-whiskers by electron beam evaporation by Sivakov, V., Andrä, G., Gösele, U., Christiansen, S.

“…Epitaxial silicon nanowhiskers (NWs) were grown on Si(111) substrates by electron beam evaporation (EBE) in a non‐ultra high vacuum environment (base pressure…”
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Low temperature wafer direct bonding by Qin-Yi Tong, Cha, G., Gafiteanu, R., Gosele, U.

“…A pronounced increase of interface energy of room temperature bonded hydrophilic Si/Si, Si/SiO/sub 2/, and SiO/sub 2//SiO/sub 2/ wafers after storage in air at…”
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Self-propagating room-temperature silicon wafer bonding in ultrahigh vacuum by Gösele, U., Stenzel, H., Martini, T., Steinkirchner, J., Conrad, D., Scheerschmidt, K.

“…Wafer bonding of commercial 4 in. silicon wafers has been performed at room temperature under ultrahigh vacuum conditions. After local initiation of the…”
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Self-organized formation of hexagonal pore arrays in anodic alumina by Jessensky, O., Müller, F., Gösele, U.

“…The conditions for the self-organized formation of ordered hexagonal structures in anodic alumina were investigated for both oxalic and sulfuric acid as an…”
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Intrinsic Ferroelectric Properties of Strained Tetragonal PbZr0.2Ti0.8O3 Obtained on Layer-by-Layer Grown, Defect-Free Single-Crystalline Films by Vrejoiu, I., Le Rhun, G., Pintilie, L., Hesse, D., Alexe, M., Gösele, U.

“…Ferroelectric single–crystalline PbZr0.2Ti0.8O3 thin films, free from extended defects, are grown by pulsed laser deposition onto vicinal SrTiO3(001) single…”
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Highly directional emission from photonic crystal waveguides of subwavelength width by KRAMPER, P, AGIO, M, SOUKOULIS, C. M, BIRNER, A, MÜLLER, F, WEHRSPOHN, R. B, GÖSELE, U, SANDOGHDAR, V

“…Recently it has been shown that it is possible to achieve directional emission out of a subwavelength aperture in a periodically corrugated metallic thin film…”
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Synthesis of Vertical High-Density Epitaxial Si(100) Nanowire Arrays on a Si(100) Substrate Using an Anodic Aluminum Oxide Template by Shimizu, T., Xie, T., Nishikawa, J., Shingubara, S., Senz, S., Gösele, U.

“…Growth of vertical epitaxial Si(100) nanowires on Si(100) substrates is demonstrated (see figure) using a combination of an anodic aluminum oxide template,…”
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Morphological instability of misfit-strained core-shell nanowires by Schmidt, V., McIntyre, P. C., Gösele, U.

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Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy by Schubert, L., Werner, P., Zakharov, N. D., Gerth, G., Kolb, F. M., Long, L., Gösele, U., Tan, T. Y.

“…Silicon nanowhiskers in the diameter range of 70 to 200 nm were grown on 〈111〉-oriented silicon substrates by molecular-beam epitaxy. Assuming the so-called…”
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