Search Results - "Gorji Ghalamestani, Sepideh"

Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogen by Webb, James L, Knutsson, Johan, Hjort, Martin, Gorji Ghalamestani, Sepideh, Dick, Kimberly A, Timm, Rainer, Mikkelsen, Anders

“…We present a study of InAs/InSb heterostructured nanowires by X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM), and in-vacuum…”
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High quality InAs and GaSb thin layers grown on Si (1 1 1) by Gorji Ghalamestani, Sepideh, Berg, Martin, Dick, Kimberly A., Wernersson, Lars-Erik

“…We have investigated growth of thin epitaxial layers of InAs on Si (1 1 1) substrates by metalorganic vapor phase epitaxy (MOVPE) and successfully grown GaSb…”
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Demonstration of Defect-Free and Composition Tunable GaxIn1―xSb Nanowires by GORJI GHALAMESTANI, Sepideh, EK, Martin, GANJIPOUR, Bahram, THELANDER, Claes, JOHANSSON, Jonas, CAROFF, Philippe, DICK, Kimberly A

“…The Ga(x)In(1-x)Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared…”
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RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates by Johansson, S., Egard, M., Ghalamestani, S. G., Borg, B. M., Berg, M., Wernersson, L., Lind, E.

“…We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for…”
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Schottky barrier and contact resistance of InSb nanowire field effect transistors by Fan, Dingxun, Kang, N, Ghalamestani, Sepideh Gorji, Dick, Kimberly A, Xu, H Q

“…Nanotechnology 27, 275204 (2016) Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a…”
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Demonstration of Defect-Free and Composition Tunable Ga x In 1– x Sb Nanowires by Gorji Ghalamestani, Sepideh, Ek, Martin, Ganjipour, Bahram, Thelander, Claes, Johansson, Jonas, Caroff, Philippe, Dick, Kimberly A.

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Demonstration of Defect-Free and Composition Tunable Ga sub(x)In sub(1-x)Sb Nanowires by Ghalamestani, Sepideh Gorji, Ek, Martin, Ganjipour, Bahram, Thelander, Claes, Johansson, Jonas, Caroff, Philippe, Dick, Kimberly A

“…The Ga sub(x)In sub(1-x)Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the…”
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Realization of single and double axial InSb-GaSb heterostructure nanowires by Ghalamestani, Sepideh Gorji, Ek, Martin, Dick, Kimberly A.

“…Heteroepitaxial growth of III‐Sb nanowires allows for the formation of various interesting complex structures and enables the combination of their remarkable…”
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RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates: Special Issue on Radio-Frequency Nanoelectronics by JOHANSSON, Sofia, EGARD, Mikael, GORJI GHALAMESTANI, Sepideh, MATTIAS BORG, B, BERG, Martin, WERNERSSON, Lars-Erik, LIND, Erik

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Demonstration of Defect-Free and Composition Tunable Ga x In1–x Sb Nanowires by Gorji Ghalamestani, Sepideh, Ek, Martin, Ganjipour, Bahram, Thelander, Claes, Johansson, Jonas, Caroff, Philippe, Dick, Kimberly A

“…The Ga x In1–x Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared…”
Get full text