Search Results - "Gorev, N.B."
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1
Control valve simulation method integrable into the global gradient algorithm
Published in ISH journal of hydraulic engineering (10-10-2024)Get full text
Journal Article -
2
Effect of substrate inhomogeneity on extrinsic photoconductivity of n-type GaAs thin-film structures under backgating
Published in Solid-state electronics (1997)“…The extrinsic photoconductivity of n-type GaAs thin-film structures under backgating was studied. It is shown that the change of the spatial inhomogeneity of…”
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3
Simple technique for biconical cavity eigenfrequency determination
Published in Radioelectronics and communications systems (2017)“…A number of features of biconical cavities make them attractive for various applications. Expressions for the calculation of the eigenfrequencies of a…”
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4
Anomalous behavior of the pulse transfer characteristic of a selectively doped Al xGa 1− xAs/GaAs heterostructure containing deep traps
Published in Microelectronic engineering (2000)“…The pulse transfer characteristic of a normal selectively doped Al x Ga 1− x As/GaAs heterostructure containing deep traps in the Al x Ga 1− x As layer is…”
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5
Anomalous behavior of the pulse transfer characteristic of a selectively doped AlxGa1−xAs/GaAs heterostructure containing deep traps
Published in Microelectronic engineering (01-05-2000)Get full text
Journal Article -
6
Sensors with biconical microwave cavity for dielectric characterization
Published in 2009 19th International Crimean Conference Microwave & Telecommunication Technology (01-09-2009)“…The possibility of consumption of the biconical cavity-based sensors for characterization of dielectric materials is calculated. Oriented the reckoning, a…”
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Conference Proceeding
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7
Peculiarities of high-frequency C-V measurements in n-type GaAs thin-film structures
Published in Solid-state electronics (01-05-1997)“…In n-type GaAs thin film structures, the presence of an n- v junction between a low-resistivity film and a semi-insulating compensated substrate causes errors…”
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8
Frequency dispersion in GaAs metal-semiconductor field-effect transistor transconductance
Published in 2008 18th International Crimean Conference - Microwave & Telecommunication Technology (01-09-2008)“…A quasi-2D numerical model a GaAs metal-semiconductor field-effect transistor, which drops the conventional sharp-boundary approximation, is presented. Using…”
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Conference Proceeding -
9
6-mm waverange reflectometer with holographic processing
Published in The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828) (2004)“…Some results of experimental checking of vector reflectometer operating in frequency range 38-52 GHz are presented. The transducer is based on E-plane cross of…”
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Conference Proceeding -
10
A stable microwave oscillator for radiowave vibrometers
Published in 13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003 (2003)“…The results of an experimental investigation into the frequency stabilization of a 3-mm microwave oscillator using a biconical cavity are presented…”
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Conference Proceeding -
11
Hardware/software system for characterization of microwave electronics materials
Published in 2005 15th International Crimean Conference Microwave & Telecommunication Technology (2005)“…A hardware/software system for characterization of GaAs thin-film structures is described. The system makes it possible to determine the concentration of…”
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Conference Proceeding -
12
Effect of deep traps on the low-frequency capacitance-voltage characteristic of selectively doped Al/sub x/Ga/sub 1-x/As/GaAs heterostructures
Published in 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) (1998)“…The low-frequency capacitance-voltage characteristic of a selectively doped Al/sub 1-x/Ga/sub x/As/GaAs heterostructure layer is calculated. It is shown that…”
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Conference Proceeding -
13
Photocapacitance of GaAs thin-film structures fabricated on a semi-insulating compensated substrate
Published in Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004 (2004)“…The results of analytical and numerical calculations of the low-frequency and the high-frequency barrier capacitance of GaAs epitaxial and ion-implanted…”
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Conference Proceeding -
14
Vector circuit analyzer in 6-MM wave range
Published in 13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003 (2003)“…The results of the development of a 48-53 GHz complex-reflectance meter are presented. The primary detector of the instrument is assembled based on an E-plane…”
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Conference Proceeding -
15
Effects of substrate inhomogeneity on the sidegating threshold voltage in GaAs integrated circuits
Published in 13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003 (2003)“…The results of numerical simulation of the backgating effect in the case of a spatially inhomogeneous substrate are presented. It is shown that having a local…”
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Conference Proceeding -
16
Nonmonotony of the extrinsic photoconductivity of n-type GaAs thin-film structures under backgating
Published in Microelectronics (01-04-2000)“…The extrinsic photoconductivity of an n-type GaAs thin-film structure under backgating has been studied. It is shown that this photoconductivity is a…”
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Journal Article -
17
Conical and biconical resonator-based transducers for vibration parameter measurement
Published in 2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843) (2004)“…The resonance frequencies calculation results of a biconical and a conical resonator with a metal or dielectric rod are presented. It is shown that when the…”
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Conference Proceeding -
18
Capacitance-voltage profiling of GaAs metal-semiconductor field-effect transistors and geometrical interelectrode capacitance
Published in 1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.99EX363) (1999)“…It is shown that the geometrical interelectrode capacitance of a GaAs metal-semiconductor field-effect transistor (MESFET) must be allowed for when determining…”
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Conference Proceeding -
19
Coaxial biconical cavity with dielectric cylinder in the break of central conductor
Published in 12th International Conference Microwave and Telecommunication Technology (2002)“…Presented are the results of numerical calculations of the resonance frequency of H-mode azimuthally symmetric oscillations in a coaxial biconical cavity with…”
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Conference Proceeding -
20
Electric field distribution in planar GaAs devices under backgating
Published in 11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487) (2001)“…The distribution of the electric field in planar film-substrate GaAs devices under backgating is considered. It is shown that backgating can make the film…”
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Conference Proceeding