Search Results - "Gorelenko, Yu"
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Conductivity mechanisms in heavy-doped n-ZrNiSn intermetallic semiconductors
Published in Journal of alloys and compounds (12-07-2007)“…A high concentration of the acceptor impurities ( N A about of 10 20 cm −3) influence on the electronic structure, the Fermi level location,…”
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Journal Article -
2
In situ synthesis, morphology and magnetic properties of poly(ether–ester) multiblock copolymer/carbon-covered nickel nanosystems
Published in Journal of non-crystalline solids (15-08-2010)“…Samples containing fine particles of face-centered cubic (fcc) phase of carbon-covered nickel (Ni/C) embedded in the PBT-block-PTMO polymer were synthesized…”
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Journal Article Conference Proceeding -
3
Metal-insulator transition induced by changes in composition in the Zr1-xScxNiSn solid solution range
Published in Journal of alloys and compounds (01-09-2005)“…Magnetic susceptibility oscillations around the metal-insulator transition across the Zr1-xScxNiSn solid solution compositions were experimentally observed for…”
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Journal Article -
4
Structural and magnetic properties of iron-rich compounds in the Yb–Fe–Ga system
Published in Journal of alloys and compounds (18-05-2006)“…The iron-rich corner of the Yb–Fe–Ga phase diagram contains at least three phases. Two form in annealed samples (500 °C) and crystallize with either the…”
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Journal Article -
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Features of the structural, electrokinetic, and magnetic properties of the heavily doped ZrNiSn semiconductor: Dy acceptor impurity
Published in Semiconductors (Woodbury, N.Y.) (2009)“…The structural, energy, electrokinetic, and magnetic characteristics of the intermetallic semiconductor ZrNiSn heavily doped (to 9.5 × 10 19 –3.8 × 10 21 cm −3…”
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Journal Article -
6
Crystal structure and physical properties of (Ti,Sc)NiSn and (Zr,Sc)NiSn solid solutions
Published in Journal of alloys and compounds (28-01-2004)“…Crystal structure, electrotransport and magnetic properties for Ti 1− x Sc x NiSn and Zr 1− y Sc y NiSn solid solutions were studied. Stability ranges of the…”
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Journal Article -
7
Features of electrical conductivity in the n-ZrNiSn intermetallic semiconductor heavily doped with the In acceptor impurity
Published in Semiconductors (Woodbury, N.Y.) (01-09-2007)“…The temperature and concentration dependences of resistivity and thermopower in a heavily doped and highly compensated semiconductor alloy ZrNiSn1−xInx in the…”
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Journal Article -
8
Structural, electrical, and magnetic properties of R-Fe-Ge (R = Y, La, Sc) films
Published in Inorganic materials (01-04-2009)“…The structural, electrical, and magnetic properties of thin R-Fe-Ge (R = Y, La, Sc) films have been studied in relation to preparation conditions (annealing…”
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Journal Article -
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Features of structural, electron-transport, and magnetic properties of heavily doped n-ZrNiSn semiconductor: Fe acceptor impurity
Published in Semiconductors (Woodbury, N.Y.) (01-03-2009)“…Structural, energy, electron-transport, and magnetic characteristics of the n -ZrNiSn intermetallic semiconductor heavily doped with Fe (the concentration N Fe…”
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Journal Article -
10
Mechanism of local amorphization of a heavily doped Ti1 − x V x CoSb intermetallic semiconductor
Published in Semiconductors (Woodbury, N.Y.) (01-07-2008)Get full text
Journal Article -
11
Structural and thermoelectric properties of Zr1 − xErxNiSn solid solutions
Published in Inorganic materials (01-06-2011)“…We have studied the electronic and crystal structures and temperature-dependent resistivity and thermopower of Zr 1 − x Er x NiSn ( x = 0–0.20) substitutional…”
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Journal Article -
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Thermoelectric power factor of Ti1 − xVxNiSn alloys
Published in Inorganic materials (01-08-2010)“…Ti 1 − x V x NiSn ( x = 0–0.10) substitutional solid solutions have been prepared by doping the intermetallic semiconductor n -TiNiSn (half-Heusler phase) with…”
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Journal Article -
13
Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors
Published in Semiconductors (Woodbury, N.Y.) (01-06-2006)“…The effect of high concentrations of acceptor dopants (N{sub A} = 10{sup 20} cm{sup -3}) on the electronic structure, Fermi level, electrical conductivity,…”
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Journal Article -
14
Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type
Published in Semiconductors (Woodbury, N.Y.) (01-02-2006)“…The role of the impurity acceptor band in the conductivity of the doped and compensated ZrNiSn semiconductor is assessed. A reconstruction model of the…”
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15
Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type
Published in Semiconductors (Woodbury, N.Y.) (01-11-2006)Get full text
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Magnetic and electrical properties of R2CuGe6 compounds (R=Y, Ce, Nd, Gd, Tb, Dy, Ho, Er, Yb)
Published in Journal of alloys and compounds (26-10-2000)Get full text
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Electric transport and magnetic properties of TiCo1−Ni Sb solid solution
Published in Journal of alloys and compounds (01-11-2001)Get full text
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18
Anomalous magnetism and electron paramagnetic resonance spectroscopy of the ZrNi1-xCrxSn solid solution
Published in Journal of alloys and compounds (10-01-2000)Get full text
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Magnetic properties, electronic structure and X-ray spectra of RCo9Si4 compounds (R=Y, Gd, Tb)
Published in Journal of alloys and compounds (10-01-2000)Get full text
Journal Article -
20
LuNi 5Sn: A first representative of RNi 5Sn stannides with CeCu 5Au structure
Published in Journal of alloys and compounds (2010)“…Single crystals of LuNi 5Sn were synthesized from the pure metals by arc-melting with subsequent heat treatment in vacuum. The crystal structure of the LuNi…”
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