Search Results - "Gorbunov, R.I"

Hopping conductivity and dielectric relaxation in Schottky barriers on GaN by Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Vorontsov-Velyaminov, P. N., Sheremet, I. A., Shreter, Yu. G.

“…A study of the current and capacitance dependences on the forward voltage in Au/n-GaN Schottky diodes, the sub-band optical absorption spectra, and the defect…”
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On the laser lift-off of lightly doped micrometer-Thick w-GaN films from substrates via the absorption of IR radiation in sapphire by Voronenkov, V.V, Virko, M.V, Kogotkov, V.S, Leonidov, A.A, Pinchuk, A.V, Zubrilov, A.S, Gorbunov, R.I, Latishev, F.E, Bochkareva, N.I, Lelikov, Y.S, Tarkhin, D.V, Smirnov, A.N, Davydov, V.Y, Sheremetc, I.A, Shreter, Y.G

“…The intense absorption of C[O.sub.2] laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire…”
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On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates by Virko, M.V, Kogotkov, V.S, Leonidov, A.A, Voronenkov, V.V, Rebane, Yu. T, Zubrilov, A.S, Gorbunov, R.I, Latyshev, P.E, Bochkareva, N.I, Lelikov, Yu. S, Tarhin, D.V, Smirnov, A.N, Davydov, V.Yu, Shreter, Yu. G

“…The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped [n.sup.+]-GaN substrates are…”
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Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes by Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Latyshev, P. E., Lelikov, Yu. S., Rebane, Yu. T., Tsyuk, A. I., Shreter, Yu. G.

“…The results of studying the influence of the finite tunneling transparency of injection barriers in light-emitting diodes with InGaN/GaN quantum wells on the…”
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Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density by Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Latyshev, P. E., Lelikov, Yu. S., Rebane, Yu. T., Tsyuk, A. I., Shreter, Yu. G.

“…The mechanism of the internal quantum efficiency droop in InGaN/GaN structures with multiple quantum wells at current densities of up to 40 A cm −2 in…”
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Mechanism of the GaN LED efficiency falloff with increasing current by Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Lelikov, Y. S., Latyshev, F. E., Rebane, Y. T., Tsyuk, A. I., Shreter, Y. G.

“…The quantum efficiency of GaN LED structures has been studied at various temperatures and biases. It was found that an efficiency falloff is observed with…”
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Quantum efficiency and formation of the emission line in light-emitting diodes based on InGaN/GaN quantum well structures by Bochkareva, N. I., Tarkhin, D. V., Rebane, Yu. T., Gorbunov, R. I., Lelikov, Yu. S., Martynov, I. A., Shreter, Yu. G.

“…The spectra of electroluminescence, photoluminescence, and photocurrent for the In{sub 0.2}Ga{sub 0.8}N/GaN quantum-well structures are studied to clarify the…”
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Bead-Fourier path integral Monte Carlo method applied to systems of identical particles by Vorontsov-Velyaminov, P.N., Gorbunov, R.I., Ivanov, S.D.

“…To make the PIMC method more effective a combined, bead-Fourier (BF), PIMC simulation scheme was introduced with its extreme cases corresponding to the…”
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Bead-Fourier path-integral Monte Carlo method applied to systems of identical particles by Vorontsov-Velyaminov, P. N., Nesvit, M. O., Gorbunov, R. I.

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