HgCdMnZnTe: Growth and physical properties

The results of studying the most important physical properties of a new quinary semiconductor HgCdMnZnTe solid solution are reported. It is shown that the properties of HgCdMnZnTe can make this material highly competitive with HgCdTe, which is the main material for infrared photoelectronics in the s...

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Published in:Journal of alloys and compounds Vol. 423; no. 1; pp. 139 - 143
Main Authors: Ostapov, S.E., Gorbatyuk, I.N., Dremlyuzhenko, S.G., Zhikharevich, V.V., Rarenko, I.M., Zaplitnyy, R.A., Fodchuk, I.M., Deibuk, V.G., Popenko, N.A., Ivanchenko, I.V., Zhigalov, A.A., Karelin, S.Yu
Format: Journal Article Conference Proceeding
Language:English
Published: Lausanne Elsevier B.V 26-10-2006
Elsevier
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Summary:The results of studying the most important physical properties of a new quinary semiconductor HgCdMnZnTe solid solution are reported. It is shown that the properties of HgCdMnZnTe can make this material highly competitive with HgCdTe, which is the main material for infrared photoelectronics in the spectral ranges 3–5 and 8–14 μm.
Bibliography:SourceType-Scholarly Journals-2
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ObjectType-Conference Paper-1
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ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2005.12.057