HgCdMnZnTe: Growth and physical properties
The results of studying the most important physical properties of a new quinary semiconductor HgCdMnZnTe solid solution are reported. It is shown that the properties of HgCdMnZnTe can make this material highly competitive with HgCdTe, which is the main material for infrared photoelectronics in the s...
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Published in: | Journal of alloys and compounds Vol. 423; no. 1; pp. 139 - 143 |
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Main Authors: | , , , , , , , , , , , |
Format: | Journal Article Conference Proceeding |
Language: | English |
Published: |
Lausanne
Elsevier B.V
26-10-2006
Elsevier |
Subjects: | |
Online Access: | Get full text |
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Summary: | The results of studying the most important physical properties of a new quinary semiconductor HgCdMnZnTe solid solution are reported. It is shown that the properties of HgCdMnZnTe can make this material highly competitive with HgCdTe, which is the main material for infrared photoelectronics in the spectral ranges 3–5 and 8–14
μm. |
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Bibliography: | SourceType-Scholarly Journals-2 ObjectType-Feature-2 ObjectType-Conference Paper-1 content type line 23 SourceType-Conference Papers & Proceedings-1 ObjectType-Article-3 |
ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2005.12.057 |