In Spite of Recent Doubts Carrier Multiplication Does Occur in PbSe Nanocrystals

Efficient carrier multiplication has been reported for several semiconductor nanocrystals: PbSe, PbS, PbTe, CdSe, InAs, and Si. Some of these reports have been challenged by studies claiming that carrier multiplication does not occur in CdSe, CdTe, and InAs nanocrystals, thus raising legitimate doub...

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Bibliographic Details
Published in:	Nano letters Vol. 8; no. 6; pp. 1713 - 1718
Main Authors:	Trinh, M. Tuan, Houtepen, Arjan J, Schins, Juleon M, Hanrath, Tobias, Piris, Jorge, Knulst, Walter, Goossens, Albert P. L. M, Siebbeles, Laurens D. A
Format:	Journal Article
Language:	English
Published:	Washington, DC American Chemical Society 01-06-2008
Subjects:	Computer Simulation Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science; rheology Crystallization - methods Electron Transport Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in multilayers, nanoscale materials and structures Exact sciences and technology Lead - chemistry Macromolecular Substances - chemistry Materials science Materials Testing Models, Chemical Molecular Conformation Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanostructures - chemistry Nanostructures - ultrastructure Nanotechnology - methods Particle Size Physics Selenium Compounds - chemistry Surface Properties Electronic properties Lead selenides Lead sulfide Indium arsenides Transients Cadmium selenides Lead tellurides II-VI semiconductors Experimental design Cadmium tellurides Silicon Nanostructured materials Nanocrystal Photobleaching III-V semiconductors
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Summary:	Efficient carrier multiplication has been reported for several semiconductor nanocrystals: PbSe, PbS, PbTe, CdSe, InAs, and Si. Some of these reports have been challenged by studies claiming that carrier multiplication does not occur in CdSe, CdTe, and InAs nanocrystals, thus raising legitimate doubts concerning the occurrence of carrier multiplication in the remaining materials. Here, conclusive evidence is given for its occurrence in PbSe nanocrystals using femtosecond transient photobleaching. In addition, it is shown that a correct determination of carrier-multiplication efficiency requires spectral integration over the photobleach feature. The carrier multiplication efficiency we obtain is significantly lower than what has been reported previously, and it remains an open question whether it is higher in nanocrystals than it is in bulk semiconductors.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1530-6984 1530-6992
DOI:	10.1021/nl0807225