Search Results - "Goodyear, Andy"

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  1. 1

    Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask by Wu, Meiyi, de Marneffe, Jean-François, Opsomer, Karl, Detavernier, Christophe, Delabie, Annelies, Naujok, Philipp, Caner, Özge, Goodyear, Andy, Cooke, Mike, Saadeh, Qais, Soltwisch, Victor, Scholze, Frank, Philipsen, Vicky

    Published in Micro and Nano Engineering (01-08-2021)
    “…Ru4-xTax (x = 1,2,3) alloys are studied as absorber candidates for EUV low-n mask. We report the morphology, surface roughness as well as the chemical…”
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    Journal Article
  2. 2

    Atomic layer etching in close-to-conventional plasma etch tools by Goodyear, Andy, Cooke, Mike

    “…Atomic layer etching using plasma is a cyclical etching process of gas dosing and surface bombardment that removes material layer by layer, and has the…”
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    Journal Article
  3. 3

    Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self‐limiting process for aspect ratio independent etching by Dallorto, Stefano, Goodyear, Andy, Cooke, Mike, Szornel, Julia E., Ward, Craig, Kastl, Christoph, Schwartzberg, Adam, Rangelow, Ivo W., Cabrini, Stefano

    Published in Plasma processes and polymers (01-09-2019)
    “…With ever increasing demands on device patterning to achieve smaller critical dimensions, the need for precise, controllable atomic layer etching (ALE) is…”
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    Journal Article
  4. 4

    Atomic layer etching of SiO2 with Ar and CHF3 plasmas: A self‐limiting process for aspect ratio independent etching by Dallorto, Stefano, Goodyear, Andy, Cooke, Mike, Szornel, Julia E, Ward, Craig, Kastl, Christoph, Schwartzberg, Adam, Rangelow, Ivo W, Cabrini, Stefano

    Published in Plasma processes and polymers (01-09-2019)
    “…With ever increasing demands on device patterning to achieve smaller critical dimensions, the need for precise, controllable atomic layer etching (ALE) is…”
    Get full text
    Journal Article
  5. 5

    Atomic layer etching of SiO 2 with Ar and CHF 3 plasmas: A self‐limiting process for aspect ratio independent etching by Dallorto, Stefano, Goodyear, Andy, Cooke, Mike, Szornel, Julia E., Ward, Craig, Kastl, Christoph, Schwartzberg, Adam, Rangelow, Ivo W., Cabrini, Stefano

    Published in Plasma processes and polymers (01-09-2019)
    “…With ever increasing demands on device patterning to achieve smaller critical dimensions, the need for precise, controllable atomic layer etching (ALE) is…”
    Get full text
    Journal Article