Search Results - "Goodnough, T.J."

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  1. 1

    Continuous-wave operation of single-transverse-mode 1310-nm VCSELs up to 115°C by Jayaraman, V, Goodnough, T.J, Beam, T.L, Ahedo, F.M, Maurice, R.A

    Published in IEEE photonics technology letters (01-12-2000)
    “…Long-wavelength vertical cavity surface emitting lasers (VCSELs) have thus far not provided substantial CW output power above 70vC. In this paper we describe…”
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    Journal Article
  2. 2

    Continuous-wave operation of single-transverse-mode 1310-nm VCSELs up to 115/spl deg/C by Jayaraman, V., Goodnough, T.J., Beam, T.L., Ahedo, F.M., Maurice, R.A.

    Published in IEEE photonics technology letters (01-12-2000)
    “…Long-wavelength vertical cavity surface emitting lasers (VCSELs) have thus far not provided substantial continuous-wave (CW) output power above 70/spl deg/C…”
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    Journal Article
  3. 3

    Study of the incorporation factor ( K) and its application to laser diode production by Hansen, D.M., Goodnough, T.J., Corbett, P.B., Zhang, L., Forbes, D.V.

    Published in Journal of crystal growth (19-01-2004)
    “…A distribution coefficient, K, can be used to simply and effectively track how species distribute between the gas phase and solid phase. Alfalight, Inc., a…”
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    Journal Article Conference Proceeding
  4. 4

    The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor by Forbes, D.V., Corbett, P.B., Hansen, D.M., Goodnough, T.J., Zhang, L., Myli, K., Yeh, J.-Y., Mawst, L.

    Published in Journal of crystal growth (19-01-2004)
    “…Selective area epitaxy (SAE) is an established means to control the lateral size and height of epitaxial features. An enhanced growth rate is observed to be a…”
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    Journal Article Conference Proceeding