Search Results - "González, Mireia Bargalló"

Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures by Beldarrain, Oihane, Duch, Marta, Zabala, Miguel, Rafí, Joan Marc, González, Mireia Bargalló, Campabadal, Francesca

“…In this work, a study of the influence of the processing conditions on the blistering of Al2O3 layers grown by atomic layer deposition (ALD) on silicon…”
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Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard by Suñé, Jordi, Aguirre, Fernando, Bargalló González, Mireia, Campabadal, Francesca, Miranda, Enrique

“…The ballistic conduction through narrow constrictions connecting charge reservoirs exhibits conductance quantization effects. Since the quantum of conductance…”
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Unpredictable Bits Generation Based on RRAM Parallel Configuration by Arumi, Daniel, Gomez-Pau, Alvaro, Manich, Salvador, Rodriguez-Montanes, Rosa, Gonzalez, Mireia Bargallo, Campabadal, Francesca

“…In this letter, a cell with the parallel combination of two TiN/Ti/HfO 2 /W resistive random access memory (RRAM) devices is studied for the generation of…”
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Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO2-Based RRAM by Bargallo Gonzalez, Mireia, Martin-Martinez, Javier, Maestro, Marcos, Cruz Acero, Maria, Nafria, Montserrat, Campabadal, Francesca

“…In this paper, the presence of filamentary current instabilities in the high resistance state of Ni/HfO 2 -based RRAM devices and their associated current…”
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True Random Number Generator based on the Variability of the High Resistance State of RRAMs by Akbari, M., Mirzakuchaki, S., Arumi, D., Manich, S., Gomez-Pau, A., Campabadal, F., Gonzalez, M. B., Rodriguez-Montanes, R.

“…Hardware-based security primitives like True Random Number Generators (TRNG) have become a crucial part in protecting data over communication channels. With…”
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Cycle-to-cycle variability analysis of Ti/Al2O3-based memristors by Rasbach, Julius, Saludes-Tapia, Mercedes, González, Mireia Bargalló, Campabadal, Francesca

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Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices by Rodriguez-Fernandez, Alberto, Aldana, Samuel, Campabadal, Francesca, Sune, Jordi, Miranda, Enrique, Jimenez-Molinos, Francisco, Bautista Roldan, Juan, Bargallo Gonzalez, Mireia

“…The impact of the dielectric thickness, forming polarity, and current compliance on the self-rectifying current-voltage(I-V) characteristics of Ni/HfO 2 /n +…”
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Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells by Gorriz, Jordi Munoz, Gonzalez, Mireia Bargallo, Campabadal, Francesca, Sune, Jordi, Miranda, Enrique A.

“…Time statistics for successive breakdown (BD) events in Al 2 O 3 /HfO 2 -based nanolaminates aimed to the development of multilevel one-time programmable (OTP)…”
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Germanium content dependence of the leakage current of recessed SiGe source/drain junctions by SIMOEN, Eddy Roger, GONZALEZ, Mireia Bargallo, ENEMAN, Geert, VERHEYEN, Peter, BENEDETTI, Aldo, BENDER, Hugo, LOO, Roger, CLAEYS, Cor

“…The impact of the Ge fraction (x), on the leakage current of recessed Si1−xGex p+-n source/drain junctions has been investigated, for a fixed recess depth of…”
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Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing by García, Hector, Castán, Helena, Dueñas, Salvador, Bailón, Luis, Campabadal, Francesca, Beldarrain, Oihane, Zabala, Miguel, González, Mireia Bargallo, Rafí, Joan Marc

“…The electrical properties of HfO2-based metal–insulator–semiconductor capacitors have been systematically investigated by means of I–V and C–V characteristics,…”
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A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs by Qian Wu, Bayerl, Albin, Porti, Marc, Martin-Martinez, Javier, Lanza, Mario, Rodriguez, Rosana, Velayudhan, Vikas, Nafria, Montserrat, Aymerich, Xavier, Bargallo Gonzalez, Mireia, Simoen, Eddy

“…This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic…”
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SPICE model for the ramp rate effect in the reset characteristic of memristive devices by Rodriguez-Fernandez, Alberto, Sune, Jordi, Miranda, Enrique, Gonzalez, Mireia Bargallo, Campabadal, Francesca, Al Chawa, Mohamad Moner, Picos, Rodrigo

“…This paper addresses the role played by the voltage ramp rate in the reset transient of resistive switching TiN/Ti/HfÜ2/W devices. The reset parameters…”
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Impact of Ge Content and Recess Depth on the Leakage Current in Strained \hbox\hbox/\hbox Heterojunctions by Rodriguez, Abraham Luque, Gonzalez, Mireia Bargallo, Eneman, G., Claeys, C., Kobayashi, D., Simoen, E., Tejada, Juan A. Jimenez

“…A study of the impact of the Ge content and the recess depth on the leakage current of strained Si 1- x Ge x /Si p + n heterojunctions is presented. A rise in…”
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Impact of Ge Content and Recess Depth on the Leakage Current in Strained Si1―xGex/Si Heterojunctions by LUQUE RODRIGUEZ, Abraham, BARGALLO GONZALEZ, Mireia, ENEMAN, Geert, CLAEYS, Cor, KOBAYASHI, Daisuke, SIMOEN, Eddy, JIMENEZ TEJADA, Juan A

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Stress Analysis and Junction Leakage of Sub-Melt Laser Annealed SiGe Epitaxial Layers by Gonzalez, Mireia Bargallo, Rosseel, Erik, Hikavyy, Andriy, Fernandez-Lanas, Tatiana, Eneman, Geert, Verheyen, Peter, Loo, Roger, Simoen, Eddy, Claeys, Cor

“…The purpose of this paper is to study the impact of the different post-epi process steps on the stress behavior of epitaxially grown Si 1-x -Ge x layers on Si…”
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Factors Influencing the Leakage Current in Embedded SiGe Source/Drain Junctions by Simoen, E., Gonzalez, M.B., Vissouvanadin, B., Chowdhury, M.K., Verheyen, P., Hikavyy, A., Bender, H., Loo, R., Claeys, C., Machkaoutsan, V., Tomasini, P., Thomas, S., Lu, J.P., Weijtmans, J.W., Wise, R.

“…This paper studies the leakage current components in embedded Si 1-x ,Ge x , source/drain (S/D) p + -n junctions, with different Ge contents, varying between…”
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Simulation of serial RRAM cell based on a Verilog-A compact model by Yang, Binbin, Arumi, Daniel, Manich, Salvador, Gomez-Pau, Alvaro, Rodriguez-Montanes, Rosa, Roldan, Juan Bautista, Gonzalez, Mireia Bargallo, Campabadal, Francesca, Fang, Liang

“…Model-based simulation is one of the effective methods of scientific research. The inherent variability of resistive switching mechanisms has been an obstacle…”
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Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO 2 -Based RRAM by Gonzalez, Mireia Bargallo, Martin-Martinez, Javier, Maestro, Marcos, Acero, Maria Cruz, Nafria, Montserrat, Campabadal, Francesca

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Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO sub(2)-Based RRAM by Gonzalez, Mireia Bargallo, Martin-Martinez, Javier, Maestro, Marcos, Acero, Maria Cruz, Nafria, Montserrat, Campabadal, Francesca

“…In this paper, the presence of filamentary current instabilities in the high resistance state of Ni/HfO sub(2)-based RRAM devices and their associated current…”
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Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO 2 /n + -Si RRAM Devices by Rodriguez-Fernandez, Alberto, Aldana, Samuel, Campabadal, Francesca, Sune, Jordi, Miranda, Enrique, Jimenez-Molinos, Francisco, Roldan, Juan Bautista, Gonzalez, Mireia Bargallo

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