Search Results - "Gontrand, C."

A Simple Way for Substrate Noise Modeling in Mixed-Signal ICs by Valorge, O., Andrei, C., Calmon, F., Verdier, J., Gontrand, C., Dautriche, P.

“…Here is a complete methodology of substrate noise modeling. The aim of this study is to predict the perturbations induced by digital commutations flowing…”
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Volume and grain boundary diffusivity of boron in polycristalline silicon during rapid thermal annealing by Merabet, A., Gontrand, C.

“…The diffusion of boron and arsenic from polycristalline silicon into single crystal silicon during rapid thermal annealing (RTA) at temperature between 1000…”
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A high-performance lateral PNP transistor structure by Gradinariu, I., Gontrand, C.

“…This paper proposes a novel lateral PNP-type structure that is fully compatible with existing single-polysilicon BiCMOS processes and offers a valid…”
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About boron and arsenic diffusions in polycrystalline silicon under rapid thermal oxidation by Semmache, B., Merabet, A., Gontrand, C., Laugier, A.

“…This work provides an experimental insight into some physical mechanisms involved in the diffusion of arsenic and boron in polysilicon/monocrystalline Si…”
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Test bed for low-cost measurement of AM/AM and AM/PM effects in RF PAs based on FPGA by Nunez-Perez, J. C., Cardenas-Valdez, J. R., Gontrand, C., Jauregui-Duran, R., Reynoso-Hernandez, J. A.

“…This work presents a new proposal FPGA-based for low cost measurement of AM/AM and AM-PM distortion curves in RF Power Amplifiers through DSP Builder tool into…”
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Ionic implantation at low energy: application to the shallow junction accomplishment and surface functionalization by Kaabi, L., Gontrand, C., Pinard, P., Balland, B., Remaki, B., Gamoudi, M., Guillaud, G.

“…The proposed work deals with rapid thermal processing of ionic boron ( 11B +) and boron difluoride (BF 2 +), implanted in phosphorusdoped Cz-(100) silicon…”
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Complementary LDMOSFET in 0.35μm BiCMOS technology-characterization and modeling by Abouelatta-Ebrahim, M, Gontrand, C, Zekry, A

“…In this paper, an nLDMOS and a pLDMOS are developed by slight modifications of the base process steps of 0.35μm BiCMOS technology. Extra two masks are used for…”
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The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask by Kaabi, L., Remaki, B., Gontrand, C., Lo, P.F., Balland, B.

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Investigation of BF2+ implants in silicon through SiO2 films Redistribution of fluorine and boron under rapid thermal annealing by Kaabi, L., Gontrand, C., Lemiti, M., Remaki, B., Balland, B., Meddeb, J., Marty, O.

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Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors by Rechem, D., Latreche, S., Gontrand, C.

“…In this paper, we study the effects of short channel on double gate MOSFETs. We evaluate the variation of the threshold voltage, the subthreshold slope, the…”
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Design and Optimization of 20 GHz LC-VCOs in SiGe:C BiCMOS Technology by Verdier, J., Perez, J.C.N., Gontrand, C.

“…The design and analysis of fully integrated voltage controlled oscillators (VCO) for 20 GHz low cost and low power communication system is presented in this…”
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Analysis of rapid thermal annealings of boron and arsenic in polysilicon emitter structures by GONTRAND, C, MERABET, A, KRIEGER-KADDOUR, S, DUBOIS, C, VALLARD, J. P

“…The codiffusion of implanted boron and arsenic during rapid thermal annealing in a polysilicon/monocrystalline silicon system used for high speed bipolar…”
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Volume and grain boundary diffusivity of boron in polycrystalline silicon during rapid thermal annealing by Merabet, A, Gontrand, C

“…The diffusion of boron and arsenic from polycrystalline silicon into single crystal silicon during rapid thermal annealing (RTA) at temperature between 1000…”
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Two-point correlations of diffusion noise sources of hot carriers in semiconductors by NOUGIER, J. P, VAISSIERE, J. C, GONTRAND, C

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Influence of the position of electrically active defects on the characteristics of an SiGe HBT by Lakhdara, M., Latreche, S., Miller, F., Gontrand, C.

“…The demand in fast electronics and in electronics high frequency permits the emergence of new types of components and notably the heterojunction bipolar…”
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An average model for power integration design by Benachour, R., Latreche, S., Latreche, M.E.H., Gontrand, C.

“…Recent developments in very-large-scale integration (VLSI) technology have radically affected the design process based on DSP. Thus, in recent years, the…”
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Impact of substrate perturbation on a 5 GHz VCO spectrum by Andrei, C., Valorge, O., Calmon, F., Verdier, J., Gontrand, C.

“…This work investigates substrate coupling effects in mixed IC's, especially the perturbations on RF block. The authors present the impact of low frequency…”
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New numerical power IGBT model and simulation of its electrical characteristics by Benbahouche, L., Latrech, S., Gontrand, C.

“…The great advances in power electronic technology and the rapid development of power semiconductor devices both in power and switching frequency ranges, have…”
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On a standard approach for substrate noise modelling in mixed signal IC's by Valorge, O., Andrei, C., Vrignon, B., Calmon, F., Gontrand, C., Verdier, J., Dautriche, P.

“…An alternative way of using the ICEM model is described. This model is considering each part of a mixed signal design: the PCB, the package, the bonding wires,…”
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A fast-settling 3 V CMOS buffer amplifier by Gradinariu, I., Gontrand, C.

“…This paper presents a two-stage fast, power-efficient 3 V CMOS buffer amplifier with rail-to-rail input/output voltage ranges. Because of its constant g/sub…”
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