Search Results - "Gong, Yunyi"
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Sensorless metal object detection for wireless power transfer using machine learning
Published in Compel (10-05-2022)“…Purpose This study aims to realize a sensorless metal object detection (MOD) using machine learning, to prevent the wireless power transfer (WPT) system from…”
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2
Identification and functional prediction of lncRNAs associated with intramuscular lipid deposition in Guangling donkeys
Published in Frontiers in veterinary science (05-07-2024)“…Many studies have shown that long non-coding RNAs (lncRNAs) play key regulatory roles in various biological processes. However, the importance and molecular…”
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3
A Sandwich-Type Thermoelectric Microwave Power Sensor for GaAs MMIC-Compatible Applications
Published in IEEE electron device letters (01-12-2016)“…This letter presents a sandwich-type nonmicroelectromechanical system (MEMS) thermoelectric microwave power sensor, which is based on the conversion principle…”
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4
A 28-GHz Switchless, SiGe Bidirectional Amplifier Using Neutralized Common-Emitter Differential Pair
Published in IEEE microwave and wireless components letters (01-08-2018)“…This letter presents a 28-GHz switchless, SiGe bidirectional amplifier (BDA) using a neutralized differential common-emitter amplifier core. On-chip…”
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5
A bi-directional, X-band 6-Bit phase shifter for phased array antennas using an active DPDT switch
Published in 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) (01-06-2017)“…This paper presents an X-band 6-bit phase shifter using active bi-directional double-pole, double-throw (DPDT) switches. The phase shifter is implemented in a…”
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Conference Proceeding -
6
Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology
Published in IEEE transactions on nuclear science (01-01-2017)“…The single-event transient (SET) response of a W-band (75-110 GHz) radar receiver front-end is investigated in this paper. A new technique to facilitate the…”
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7
Neural Network for Both Metal Object Detection and Coil Misalignment Prediction in Wireless Power Transfer
Published in IEEE transactions on magnetics (01-09-2022)“…This study proposes a method for wireless power transfer (WPT) systems to identify the existence of foreign metal objects and simultaneously predict the…”
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8
Highly Linear High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifiers With a Compact 2nd-Harmonic-Shorted Four-Way Transformer and a Thermally Compensating Dynamic Bias Circuit
Published in IEEE journal of solid-state circuits (01-09-2020)“…This article presents the design of a highly linear high-power silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) 802.11ac/ax wireless local area…”
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9
A 60-GHz SiGe Power Amplifier With Three-Conductor Transmission-Line-Based Wilkinson Baluns and Asymmetric Directional Couplers
Published in IEEE transactions on microwave theory and techniques (01-01-2021)“…A compact, 60-GHz high-power, wideband balanced power amplifier, implemented in a 90-nm SiGe BiCMOS technology, is demonstrated. A three-conductor…”
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10
Multi-objective optimization and uncertainty quantification for inductors based on neural network
Published in Compel (30-07-2024)“…Purpose The prolonged training time of the neural network (NN) has sparked considerable debate regarding their application in the field of optimization. The…”
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11
Next Generation of Automotive Radar with Leading-Edge Advances in SiGe Devices and Glass Panel Embedding (GPE)
Published in 2018 IEEE 68th Electronic Components and Technology Conference (ECTC) (01-05-2018)“…The design and process building blocks for an ultra-miniaturized automotive radar module were demonstrated with the most leading-edge SiGe devices operating at…”
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Conference Proceeding -
12
Understanding 3D food printing through computer simulation and extrusion force analysis
Published in Journal of food engineering (01-06-2024)“…Extrusion force is an important indicator of the effectiveness of a printing material for extrusion-based 3D printing. Finite element method was therefore used…”
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13
A Balanced Power Amplifier with Asymmetric Coupled-Line Couplers and Wilkinson Baluns in a 90 nm SiGe BiCMOS Technology
Published in 2020 IEEE/MTT-S International Microwave Symposium (IMS) (01-08-2020)“…This work presents the design of a high power, two-stage, wideband, balanced power amplifier (PA) implemented in a 90 nm SiGe BiCMOS technology. Asymmetric…”
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Conference Proceeding -
14
A Compact, High-Power, 60 GHz SPDT Switch Using Shunt-Series SiGe PIN Diodes
Published in 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) (01-06-2019)“…This work describes the design of a compact, 60 GHz, SPDT switch implemented using PIN diodes in a 130 nm SiGe BiCMOS technology. The SPDT RF switch employs a…”
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Conference Proceeding -
15
Performance Improvements of Reverse-Saturated SiGe HBT Millimeter-Wave Switches with Floating Emitter Configuration
Published in 2021 IEEE MTT-S International Microwave Symposium (IMS) (07-06-2021)“…This work demonstrates the advantages of using reverse-saturated SiGe HBTs in a floating-emitter (FE) configuration compared to the standard grounded-emitter…”
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Conference Proceeding -
16
p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform
Published in IEEE transactions on nuclear science (01-01-2018)“…The benefits of using p-n-p silicon-germanium (SiGe) heterojuction bipolar transistors (HBTs) in radio frequency (RF) circuits for the mitigation of…”
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17
A Broadband Logarithmic Power Detector Using 130 nm SiGe BiCMOS Technology
Published in 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) (01-11-2019)“…This work presents the design of a broadband logarithmic (log) power detector implemented using 130 nm SiGe BiCMOS technology. The proposed log detector uses a…”
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Conference Proceeding -
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Design of an 18-50 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier
Published in 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (16-11-2020)“…This paper presents the design of an 18-50 GHz SiGe HBT cascode, non-uniform distributed power amplifier (NDPA), which was implemented in 0.13-µm SiGe BiCMOS…”
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Conference Proceeding