Search Results - "Gong, Penglai"

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  1. 1

    Strong In-Plane Anisotropies of Optical and Electrical Response in Layered Dimetal Chalcogenide by Li, Liang, Gong, Penglai, Wang, Weike, Deng, Bei, Pi, Lejing, Yu, Jing, Zhou, Xing, Shi, Xingqiang, Li, Huiqiao, Zhai, Tianyou

    Published in ACS nano (24-10-2017)
    “…An interesting in-plane anisotropic layered dimetal chalcogenide Ta2NiS5 is introduced, and the optical and electrical properties with respect to its in-plane…”
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    Journal Article
  2. 2

    Highly In‐Plane Anisotropic 2D GeAs2 for Polarization‐Sensitive Photodetection by Li, Liang, Gong, Penglai, Sheng, Daopeng, Wang, Shuao, Wang, Weike, Zhu, Xiangde, Shi, Xingqiang, Wang, Fakun, Han, Wei, Yang, Sanjun, Liu, Kailang, Li, Huiqiao, Zhai, Tianyou

    Published in Advanced materials (Weinheim) (13-12-2018)
    “…Due to the intriguing anisotropic optical and electrical properties, low‐symmetry 2D materials are attracting a lot of interest both for fundamental studies…”
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  3. 3

    In-plane anisotropic Raman response of layered In2Te5 semiconductor by Zhou, Yulan, Wang, Weike, Li, Liang, Gong, Penglai, Tang, Dongsheng

    Published in Applied physics letters (03-05-2021)
    “…This work presents a systematic study of phonon modes in Indium tellurides (In2Te5), a member of Pentatelluride M2Te5, where M = Al, Ga, and In, by Raman…”
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  4. 4

    Solution‐Processable Epitaxial Metallic Delafossite Oxide Films by Wei, Renhuai, Gong, Penglai, Zhao, Minglin, Tong, Haiyun, Tang, Xianwu, Hu, Ling, Yang, Jie, Song, Wenhai, Zhu, Xuebin, Sun, Yuping

    Published in Advanced functional materials (01-06-2020)
    “…Metallic delafossites ABO2, as the new benchmark of ultra‐high conductive oxides, have recently attracted great interest. The harsh processing conditions and…”
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  5. 5

    Spin-wave modes of elliptical skyrmions in magnetic nanodots by Jin, Chendong, Li, Shuang, Zhang, Hu, Wang, Ruining, Wang, Jianglong, Lian, Ruqian, Gong, Penglai, Shi, Xingqiang

    Published in New journal of physics (01-04-2022)
    “…Magnetic skyrmions, whose shapes are ellipse due to the presence of anisotropic Dzyaloshinskii–Moriya interaction (DMI), have already been discovered in…”
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  6. 6

    Spin-wave modes of magnetic bimerons in nanodots by Jin, Chendong, Li, Shuang, Zhang, Hu, Wang, Ruining, Wang, Jianglong, Lian, Ruqian, Gong, Penglai, Shi, Xingqiang

    Published in New journal of physics (01-07-2022)
    “…We report the resonance excitations and the spin-wave modes of a single bimeron in a confined nanodot by using micromagnetic simulations. Magnetic bimerons can…”
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  7. 7

    Raman investigation of layered ZrGeTe4 semiconductor by Gong, Wentao, Li, Liang, Gong, Penglai, Zhou, Yulan, Zhang, Zhitao, Zhou, Weichang, Wang, Weike, Liu, Ziran, Tang, Dongsheng

    Published in Applied physics letters (29-04-2019)
    “…This work presents a systematic study of phonon modes in a ZrGeTe4 layered semiconductor by Raman spectroscopy. Ten Raman characteristic peaks were detected…”
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  8. 8
  9. 9

    Tunable Negative Poisson's Ratio in Van der Waals Superlattice by Li, Xiaowen, Qiang, Xiaobin, Gong, Zhenhao, Zhang, Yubo, Gong, Penglai, Chen, Lang

    Published in Research (Washington) (2021)
    “…Negative Poisson's ratio (NPR) materials are functional and mechanical metamaterials that shrink (expand) longitudinally after being compressed (stretched)…”
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  10. 10

    2D GeP: An Unexploited Low‐Symmetry Semiconductor with Strong In‐Plane Anisotropy by Li, Liang, Wang, Weike, Gong, Penglai, Zhu, Xiangde, Deng, Bei, Shi, Xingqiang, Gao, Guoying, Li, Huiqiao, Zhai, Tianyou

    Published in Advanced materials (Weinheim) (01-04-2018)
    “…Germanium phosphide (GeP), a new member of the Group IV–Group V compounds, is introduced into the fast growing 2D family with experimental and theoretical…”
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  11. 11

    A Submicrosecond-Response Ultraviolet–Visible–Near-Infrared Broadband Photodetector Based on 2D Tellurosilicate InSiTe3 by Chen, Jiawang, Li, Liang, Gong, Penglai, Zhang, Hanlin, Yin, Shiqi, Li, Ming, Wu, Liangfei, Gao, Wenshuai, Long, Mingsheng, Shan, Lei, Yan, Feng, Li, Guanghai

    Published in ACS nano (24-05-2022)
    “…2D material (2DM) based photodetectors with broadband photoresponse are of great value for a vast number of applications such as multiwavelength…”
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  12. 12

    Scalable Van der Waals Encapsulation by Inorganic Molecular Crystals by Liu, Lixin, Gong, Penglai, Liu, Kailang, Nie, Anmin, Liu, Zhongyuan, Yang, Sanjun, Xu, Yongshan, Liu, Teng, Zhao, Yinghe, Huang, Li, Li, Huiqiao, Zhai, Tianyou

    Published in Advanced materials (Weinheim) (01-02-2022)
    “…Encapsulation is critical for devices to guarantee their stability and reliability. It becomes an even more essential requirement for devices based on 2D…”
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  13. 13

    A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film by Liu, Kailang, Jin, Bao, Han, Wei, Chen, Xiang, Gong, Penglai, Huang, Li, Zhao, Yinghe, Li, Liang, Yang, Sanjun, Hu, Xiaozong, Duan, Junyuan, Liu, Lixin, Wang, Fakun, Zhuge, Fuwei, Zhai, Tianyou

    Published in Nature electronics (01-12-2021)
    “…Van der Waals dielectrics, such as hexagonal boron nitride, are widely used to preserve the intrinsic properties of two-dimensional semiconductors in…”
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  14. 14
  15. 15

    Exploration of Electrode‐Electrolyte‐in‐One System Based on Fluorine/Chloride Ion Battery by Wu, Mengqi, Hu, Xuechen, Cui, Fuhan, Wang, Jianglong, Zhao, Chunyu, Shi, Xingqiang, Liu, Huanjuan, Wang, Ruining, Zhang, Hu, Jin, Chendong, Gong, Penglai, Cai, Dong, Wei, Yingjin, Lian, Ruqian

    Published in Advanced energy materials (19-02-2024)
    “…With an increasingly profound understanding of battery materials, strategies designed for interface protection have become more sophisticated. However, it is…”
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  16. 16

    Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution by Liu, Kailang, Chen, Xiang, Gong, Penglai, Yu, Ruohan, Wu, Jinsong, Li, Liang, Han, Wei, Yang, Sanjun, Zhang, Chendong, Deng, Jinghao, Li, Aoju, Zhang, Qingfu, Zhuge, Fuwei, Zhai, Tianyou

    Published in Science bulletin (Beijing) (01-01-2022)
    “…A controllable elemental substitution strategy enables the strain engineering of two-dimensional MoS2 to its limit, which can potentially modulate its physical…”
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  17. 17

    Understanding 2D Semiconductor Edges by Combining Local and Nonlocal Effects: The Case of MoSi2N4 by Zhang, Yuejiao, Gao, Yumeng, Ren, Yinti, Jin, Chendong, Zhang, Hu, Lian, Ruqian, Gong, Penglai, Wang, Rui-Ning, Wang, Jiang-Long, Shi, Xing-Qiang

    Published in Chemistry of materials (13-02-2024)
    “…Similar to surfaces of three-dimensional (3D) bulk materials, edges are inevitable in 2D materials and have been studied a lot (e.g., for MoS2). In the current…”
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  18. 18

    H‐/dT‐MoS2‐on‐MXene Heterostructures as Promising 2D Anode Materials for Lithium‐Ion Batteries: Insights from First Principles by Shao, Yangfan, Gong, Penglai, Pan, Hui, Shi, Xingqiang

    Published in Advanced theory and simulations (01-08-2019)
    “…Experimental synthesis of two‐dimensional MoS2‐on‐MXene heterostructures and phase control of MoS2 have been demonstrated recently. Here, the electronic,…”
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  19. 19

    A Submicrosecond-Response Ultraviolet-Visible-Near-Infrared Broadband Photodetector Based on 2D Tellurosilicate InSiTe 3 by Chen, Jiawang, Li, Liang, Gong, Penglai, Zhang, Hanlin, Yin, Shiqi, Li, Ming, Wu, Liangfei, Gao, Wenshuai, Long, Mingsheng, Shan, Lei, Yan, Feng, Li, Guanghai

    Published in ACS nano (24-05-2022)
    “…2D material (2DM) based photodetectors with broadband photoresponse are of great value for a vast number of applications such as multiwavelength…”
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    Journal Article
  20. 20

    Scalable Van der Waals Encapsulation by Inorganic Molecular Crystals (Adv. Mater. 7/2022) by Liu, Lixin, Gong, Penglai, Liu, Kailang, Nie, Anmin, Liu, Zhongyuan, Yang, Sanjun, Xu, Yongshan, Liu, Teng, Zhao, Yinghe, Huang, Li, Li, Huiqiao, Zhai, Tianyou

    Published in Advanced materials (Weinheim) (01-02-2022)
    “…2D Materials Van der Waals (vdW) encapsulation is one of the most promising approaches to improve the stability and reliability of 2D‐materials‐based devices…”
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