Search Results - "Gonda, S"

Wound healing: a practical guide for the peripheral interventionalist by Iqbal, M, Iqbal, S, Gonda, S, Berger, R

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Measurement of < 20     fs bunch length using coherent transition radiation by Nozawa, I., Kan, K., Yang, J., Ogata, A., Kondoh, T., Gohdo, M., Norizawa, K., Kobayashi, H., Shibata, H., Gonda, S., Yoshida, Y.

“…By monitoring coherent transition radiation (CTR) with a Michelson interferometer, bunch length measurement was investigated. Less-than-20-fs electron bunches…”
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Femoral Artery Complications Associated with the Mynx Closure Device by FIELDS, J. D, LIU, K. C, LEE, D. S, GONDA, S. J, DOGAN, A, GULTEKIN, S. H, NESBIT, G. M, PETERSEN, B. D, BARNWELL, S. L

“…Devices to close a femoral arteriotomy are frequently used after catheterization for interventional radiology and cardiac procedures to decrease the time to…”
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A Mentorship and Networking Group for Women in Radiology by Ladd, Lauren M., MD, Bonaminio, Dana N., MD, Gonda, Angela S., MD, Gasparis, Pauley T., MD, Bell, W. Logan, MD, Aaron, Vasantha D., MD, Heitkamp, Darel E., MD

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Radium girls by Gunderman, Richard B, Gonda, Angela S

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Chromosome aberrations induced by dual exposure of protons and iron ions by Hada, M, Meador, J A, Cucinotta, F A, Gonda, S R, Wu, H

“…During space travel, astronauts will be exposed to protons and heavy charged particles. Since the proton flux is high compared to HZE particles, on average, it…”
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Comparison of genotoxic damage in monolayer cell cultures and three-dimensional tissue-like cell assemblies by Behravesh, E., Emami, K., Wu, H., Gonda, S.

“…Assessing the biological risks associated with exposure to the high-energy charged particles encountered in space is essential for the success of long-term…”
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Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy by Kuroiwa, R., Asahi, H., Asami, K., Kim, S.-J., Iwata, K., Gonda, S.

“…GaN-rich side of GaNP and GaNAs layers is grown at 750 °C by gas-source molecular beam epitaxy. Phase separation is observed for the layers with P and As…”
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Very small temperature-dependent band-gap energy in TlInGaAs/InP double heterostructures grown by gas-source molecular-beam epitaxy by Ayabe, A., Asahi, H., Lee, H. J., Maeda, O., Konishi, K., Asami, K., Gonda, S.

“…TlInGaAs/InP double heterostructures (DHs) were grown on (100) InP substrates by gas-source molecular-beam epitaxy. Almost no occurrence of Tl interdiffusion…”
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Improved properties of polycrystalline GaN grown on silica glass substrate by Hiroki, M, Asahi, H, Tampo, H, Asami, K, Gonda, S

“…Much improved optical properties are obtained for the polycrystalline GaN layers grown on amorphous silica glass substrate by gas source molecular beam epitaxy…”
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Gas source MBE growth and characterization of TlInGaP and TlInGaAs layers for long wavelength applications by Asahi, H., Koh, H., Takenaka, K., Asami, K., Oe, K., Gonda, S.

“…New III–V semiconductors TlInGaP and TlInGaAs (Tl composition of less than 0.1) are grown on InP substrates by gas source molecular beam epitaxy. They are…”
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Gas source MBE growth of GaN rich side of GaN1 − xPx using ion-removed ECR radical cell by Iwata, K., Asahi, H., Asami, K., Gonda, S.

“…GaN-rich side of GaN1 − xPx alloy are grown on (0 0 0 1) sapphire substrates by electron cyclotron resonance molecular beam epitaxy (ECR-MBE) using an ion…”
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Accurate topographic images using a measuring atomic force microscope by Gonda, S, Doi, T, Kurosawa, T, Tanimura, Y, Hisata, N, Yamagishi, T, Fujimoto, H, Yukawa, H

“…A real-time measuring atomic force microscope (AFM) equipped with a high-resolution three-axis laser interferometer has been constructed. A three-sided mirror…”
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Simultaneous measurement of multiple radiation-induced protein expression profiles using the Luminex(TM) system by Desai, N, Wu, H, George, K, Gonda, S R, Cucinotta, F A

“…Space flight results in the exposure of astronauts to a mixed field of radiation composed of energetic particles of varying energies, and biological indicators…”
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Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates by Yoshida, S., Misawa, S., Gonda, S.

“…The electrical and luminescent properties of the GaN epitaxial films grown on AlN-coated sapphire by reactive molecular beam epitaxy have been studied. The GaN…”
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Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBE by Asahi, H, Iwata, K, Tampo, H, Kuroiwa, R, Hiroki, M, Asami, K, Nakamura, S, Gonda, S

“…Polycrystalline GaN layers showing very strong photoluminescence (PL) intensities are successfully grown on amorphous fused silica (SiO 2) substrates by gas…”
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Growth of high-quality polycrystalline GaN on glass substrate by gas source molecular beam epitaxy by Tampo, H, Asahi, H, Imanishi, Y, Hiroki, M, Ohnishi, K, Yamada, K, Asami, K, Gonda, S

“…High-quality polycrystalline GaN layers are grown on quartz (silica) glass substrates by gas source molecular beam epitaxy (MBE). The relationship between…”
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Cardiac organogenesis in vitro: reestablishment of three-dimensional tissue architecture by dissociated neonatal rat ventricular cells by Akins, R E, Boyce, R A, Madonna, M L, Schroedl, N A, Gonda, S R, McLaughlin, T A, Hartzell, C R

“…The mammalian heart does not regenerate in vivo. The heart is, therefore, an excellent candidate for tissue engineering approaches and for the use of…”
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Strong photoluminescence emission from GaN grown on amorphous silica substrates by gas source MBE by Iwata, K, Asahi, H, Asami, K, Kuroiwa, R, Gonda, S

“…GaN layers are grown on amorphous fused silica glass substrates by gas source MBE using an ion removed electron cyclotron resonance (ECR) radical cell…”
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Polar vibrations and the effective charges of the icosahedral boron solid by Shirai, K., Gonda, S.

“…Boron crystals exhibit polar vibrations, despite the fact that the crystal is comprised of the same chemical species. In this paper, occurrence of the…”
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