Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications

Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications

The performance of InAlAs/InGaAs quantum well field effect transistors are subject to high impact ionization and band-to-band tunneling (BTBT) due to its narrow bandgap feature. In this work, the energy gap is engineered using strain and quantization techniques to increase the effective energy gap l...

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Bibliographic Details
Published in:Current applied physics Vol. 13; no. 3; pp. 487 - 492
Main Authors: Gomes, Umesh P., Chen, Yiqiao, Kabi, Sanjib, Chow, Peter, Biswas, Dhrubes
Format: Journal Article
Language:English
Published: Elsevier B.V 01-05-2013
한국물리학회
Subjects:
BTBT
Channel quantization
Devices
energy
Energy gap
engineering
High electron mobility transistors
Impact ionization
Indium gallium arsenides
Ionization
Leakage current
Quantum wells
Semiconductor devices
Strain
물리학
Impact ionization
BTBT
Channel quantization
Strain
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Summary:The performance of InAlAs/InGaAs quantum well field effect transistors are subject to high impact ionization and band-to-band tunneling (BTBT) due to its narrow bandgap feature. In this work, the energy gap is engineered using strain and quantization techniques to increase the effective energy gap leading to low impact ionization and BTBT leakage current. It is shown that the impact ionization is reduced in 5 nm channel device as compared to 13 nm device with onset at approximately Egeff/q. Also the band-to-band-tunneling current is reduced due to the increase in effective energy gap. We have also investigated the effects of quantum well engineering on the dc performance of InGaAs HEMTs. ► We investigate the effects of strain and channel quantization on impact ionization and BTBT. ► The effective energy gap is increased due to strain and quantization. ► Increasing the energy gap reduces leakage current and increases the onset of impact ionization in the channel.
Bibliography:http://dx.doi.org/10.1016/j.cap.2012.09.024
ObjectType-Article-2
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G704-001115.2013.13.3.006
ISSN:1567-1739
1878-1675
DOI:10.1016/j.cap.2012.09.024