Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

The experimental current-voltage characteristics and dependences of the external quantum yield on the current density of light-emitting diodes based on InGaN/GaN multiple quantum wells for the wide temperature range T = 10–400 K are presented. It is shown that, at low-temperatures T < 100 K, the...

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Bibliographic Details
Published in:	Semiconductors (Woodbury, N.Y.) Vol. 47; no. 10; pp. 1382 - 1386
Main Authors:	Prudaev, I. A., Golygin, I. Yu, Shirapov, S. B., Romanov, I. S., Khludkov, S. S., Tolbanov, O. P.
Format:	Journal Article
Language:	English
Published:	Boston Springer US 01-10-2013 Springer
Subjects:	CURRENT DENSITY ELECTRIC POTENTIAL ELECTRON BEAM INJECTION ELECTRONS GALLIUM NITRIDES LIGHT EMITTING DIODES Liquors Magnetic Materials Magnetism MATERIALS SCIENCE NANOSCIENCE AND NANOTECHNOLOGY Physics Physics and Astronomy Physics of Semiconductor Devices QUANTUM WELLS TEMPERATURE DEPENDENCE Light Emit Diode Multiple Quantum Carrier Injection Tunnel Injection Injection Mechanism
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Summary:	The experimental current-voltage characteristics and dependences of the external quantum yield on the current density of light-emitting diodes based on InGaN/GaN multiple quantum wells for the wide temperature range T = 10–400 K are presented. It is shown that, at low-temperatures T < 100 K, the injection of holes into the quantum wells occurs from localized acceptor states. The low-temperature injection of electrons into p -GaN occurs due to quasi-ballistic transport in the region of multiple quantum wells. An increase in temperature leads to an increase in the current which is governed by thermally activated hole and electron injection from the allowed bands of GaN.
ISSN:	1063-7826 1090-6479
DOI:	10.1134/S1063782613100230