Transparent, high mobility InGaZnO thin films deposited by PLD

Transparent oxide semiconductor, InGaZnO, thin films were prepared by pulsed laser deposition at room temperature. The carrier concentration was found to vary by several orders of magnitude from insulating to 1019 carriers/cm3 depending on the oxygen partial pressure during deposition. Hall mobiliti...

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Bibliographic Details
Published in:	Thin solid films Vol. 516; no. 7; pp. 1326 - 1329
Main Authors:	Suresh, Arun, Gollakota, Praveen, Wellenius, Patrick, Dhawan, Anuj, Muth, John F.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Lausanne Elsevier B.V 15-02-2008 Elsevier Science
Subjects:	a-IGZO Amorphous oxide semiconductor Amorphous semiconductor AOS Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science; rheology Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Electronics Exact sciences and technology Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects) IGZO Laser deposition Materials science Methods of deposition of films and coatings; film growth and epitaxy Mobility Physics PLD Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices TCO Transistors Transparent conducting oxide IGZO TCO AOS Mobility PLD Amorphous oxide semiconductor Amorphous semiconductor a-IGZO Transparent conducting oxide Semiconductor thin films Hall mobility Amorphous semiconductors Pulsed laser deposition Thin film transistors Transparent thin film Quantity ratio Indium Gallium Zinc Oxides Electron mobility Zinc oxide Laser ablation technique Silicon Carrier density
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Summary:	Transparent oxide semiconductor, InGaZnO, thin films were prepared by pulsed laser deposition at room temperature. The carrier concentration was found to vary by several orders of magnitude from insulating to 1019 carriers/cm3 depending on the oxygen partial pressure during deposition. Hall mobilities as high as 16 cm2/V s were observed. This is approximately an order of magnitude higher than the mobility of amorphous silicon and indicates that InGaO3(ZnO)x with x≤5 may be suitable for transparent, thin film transistor applications. Post-deposition annealing was found to strongly influence the carrier concentration while annealing effects on the electron mobility was less influential.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2007.03.153