Search Results - "Golke, K."

Limiting Upset Cross Sections of SEU Hardened SOI SRAMs by Liu, M.S., Liu, H.Y., Brewster, N., Nelson, D., Golke, K.W., Kirchner, G., Hughes, H.L., Campbell, A., Ziegler, J.F.

“…This paper discusses the practical limits of proton and heavy ion induced single event upset cross sections in SEU hardened deep submicron SOI SRAMs…”
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The Effect of Active Delay Element Resistance on Limiting Heavy Ion SEU Upset Cross-Sections of SOI ADE/SRAMs by Liu, S.T., Nelson, D.K., Tsang, J.C., Golke, K., Fechner, P., Heikkila, W., Brewster, N., Van Cleave, R., Liu, H.Y., McMarr, P.J., Hughes, H.L., Ziegler, J.F.

“…This paper discusses the effective limiting heavy-ion induced single-event upset cross section of radiation-hardened 150 nm SOI SRAM and the resistance of the…”
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Single event effects in PDSOI 4 M SRAM fabricated in UNIBOND by Liu, S.T., Heikkila, W.W., Golke, K.W., Anthony, D., Hurst, A., Kirchner, G., Jenkins, W.C., Hughes, H.L., Mitra, S., Ioannou, D.E.

“…Heavy ion and proton single event upsets of 4 M SOI SRAM with a hardened delay element in each memory cell were evaluated. These 4 M SRAM were fabricated in…”
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Determination of funnel length from cross section versus LET measurements by Golke, K.W.

“…Proposes an empirical model and method for determining the funnel length from heavy ion upset cross sections as a function of LET (linear energy transfer)…”
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150nm SOI embedded SRAMs with very low SER by Nelson, D.K., Liu, H., Golke, K., Kohli, A.

“…A split word line design technique that improves the soft error rate (SER) of high performance 150nm SOI embedded SRAMs is presented along with SER results…”
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A new dose rate model for SOI MOSFETs and its implementation in SPICE by Liu, H.Y., Golke, K.W., Liu, S.T.

“…A new SPICE based dose rate model is proposed for SOI MOSFETs, which accounts for collections of excess carriers by both source/body and drain/body junctions…”
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Angular effects in proton-induced single-event upsets in silicon-on-sapphire and silicon-on-insulator devices by Kniffin, S.D., McCabe, J.F., Gardner, G.A., Lintz, J., Ross, C., Golke, K., Bums, B., Sanders, A.B., Reed, R.A., LaBel, K.A., Marshall, P.W., Liu, S.T., Kim, H.S., Forney, J.D., Tabbert, C.J., Carts, M.A., Swonger, J.W.

“…We present new data in the ongoing effort to bound the effect of proton angle of incidence on the single-event upset (SEU) rate in silicon-on-sapphire (SOS)…”
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Proton induced single event upset in a 4M SOI SRAM by Liu, H. Y., Liu, S.T., Golke, K.W., Nelson, D.K., Heikkila, W.W., Jenkins, W.C.

“…A non-conventional upset mechanism is proposed to explain the proton test results for our 4M SOI SRAM for the first time in this paper. In a hardened SRAM cell…”
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Characterization Summary for a Radiation Hardened 16KX1 SRAM by Passow, Robin H., Christiansen, Joel J., Rabe, Robert L., Golke, Keith W.

“…A radiation-hard 16kx1 SRAM with a typical access time of less than 100 ns and total dose hardness to 1E6 rads(SiO2) has been developed. Extensive radiation…”
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