Search Results - "Gokhale, Mahesh"

Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes by De, Suman, Layek, Arunasish, Raja, Archana, Kadir, Abdul, Gokhale, Mahesh R., Bhattacharya, Arnab, Dhar, Subhabrata, Chowdhury, Arindam

“…The high light‐output efficiencies of InxGa1‐xN quantum‐well (QW)‐based light‐emitting diodes (LEDs) even in presence of a large number of nonradiative…”
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Tunable thermal conductivity in defect engineered nanowires at low temperatures by Dhara, Sajal, Solanki, Hari S., R., Arvind Pawan, Singh, Vibhor, Sengupta, Shamashis, Chalke, B. A., Dhar, Abhishek, Gokhale, Mahesh, Bhattacharya, Arnab, Deshmukh, Mandar M.

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Growth of high-quality GaN on (1 0 0) Ga2O3 substrates by facet-controlled MOVPE by Hossain, Emroj, Rahman, A. Azizur, Gokhale, Mahesh, Kulkarni, Ruta, Mondal, Rajib, Thamizhavel, Arumugam, Bhattacharya, Arnab

“…•Detailed optimization of epitaxial growth of GaN on (1 0 0) β-Ga2O3 via MOVPE.•Demonstration of high quality GaN by 3-step MOVPE using an intermediate…”
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Magnetotransport properties of individual InAs nanowires by Dhara, Sajal, Solanki, Hari S., Singh, Vibhor, Narayanan, Arjun, Chaudhari, Prajakta, Gokhale, Mahesh, Bhattacharya, Arnab, Deshmukh, Mandar M.

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Etching of micro-channels in fused quartz for novel device applications by Shetty, Shubhava, Kumar Mishra, Dileep, Dixit, Pradeep, Shetty, Shrushti S, Jayarama, A., shah, Amit P., gokhale, Mahesh R., Prabhu, Shriganesh, Duttagupta, S.P, Pinto, Richard

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Optimum hydrogen flowrates and membrane-electrode clamping pressure in hydrogen fuel cells with dual-serpentine flow channels by Castelino, Preetam, Shah, Amit, Gokhale, Mahesh, Jayarama, A., Suresh, K.V., Fernandes, Peter, Prabhu, Shriganesh, Duttagupta, Siddhartha, Pinto, Richard

“…Hydrogen fuel cells have been designed and fabricated with an aim to investigate effect of cell clamping pressure and hydrogen flowrates on the performance of…”
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Light-Emitting Diodes: Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes (Adv. Funct. Mater. 20/2011) by De, Suman, Layek, Arunasish, Raja, Archana, Kadir, Abdul, Gokhale, Mahesh R., Bhattacharya, Arnab, Dhar, Subhabrata, Chowdhury, Arindam

“…The true‐color photoluminescence microscopy image of an InGaN alloy‐ based quantum‐well LED shows the presence of highly localized emission centers which…”
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Microstructure of InN epilayers deposited in a close-coupled showerhead reactor by Ganguli, Tapas, Kadir, Abdul, Gokhale, Mahesh, Kumar, Ravi, Shah, A.P., Arora, B.M., Bhattacharya, Arnab

“…The microstructure of epitaxial InN layers has been analyzed by high-resolution X-ray diffraction. Various mosaic block parameters like the tilt and twist…”
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High-responsivity high-gain In0.53Ga0.47As-InP quantum-well infrared photodetectors grown using metal-organic vapor phase epitaxy by MAJUMDAR, Amlan, SHAH, Amit, GOKHALE, Mahesh, SEN, Susanta, GHOSH, Sandip, BRIJ MOHAN ARORA, TSUI, Daniel

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Wide bandwidth nanowire electromechanics on insulating substrates at room temperature by Abhilash, T. S, Mathew, John P, Sengupta, Shamashis, Gokhale, Mahesh R, Bhattacharya, Arnab, Deshmukh, Mandar M

“…Nano Letters 12, 6432 (2012) We study InAs nanowire resonators fabricated on sapphire substrate with a local gate configuration. The key advantage of using an…”
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Time-resolved THz-spectroscopy of InAs nano-wires by Prabhu, S S, Deshpande, Amey, Chaubal, Alok U, Dhara, Sajal, Gokhale, Mahesh, Bhattacharya, Arnab, Vengurlekar, A S

“…We study the emission mechanisms of THz radiation from InAs nanowires (NWs) using femtosecond infrared (IR) pump beam and THz probe in a time-resolved…”
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Magnetotransport properties of individual InAs nanowires by Dhara, Sajal, Solanki, Hari S, Singh, Vibhor, Narayanan, Arjun, Chaudhari, Prajakta, Gokhale, Mahesh, Bhattacharya, Arnab, Deshmukh, Mandar M

“…Physical Review B 79, 121311R(2009) We probe the magnetotransport properties of individual InAs nanowires in a field effect transistor geometry. In the low…”
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Tunable thermal conductivity in defect engineered nanowires at low temperatures by Dhara, Sajal, Solanki, Hari S, R, Arvind Pawan, Singh, Vibhor, Sengupta, Shamashis, Chalke, B. A, Dhar, Abhishek, Gokhale, Mahesh, Bhattacharya, Arnab, Deshmukh, Mandar M

“…Phys. Rev. B 84, 121307(R) (2011) We measure the thermal conductivity ($\kappa$) of individual InAs nanowires (NWs), and find that it is 3 orders of magnitude…”
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THz spectroscopy of InAs nanowires by Prabhu, S.S., Chaubal, A.U., Deshpande, A., Dhara, S., Gokhale, M., Bhattacharya, A., Vengurlekar, A.S.

“…We present our investigation of the THz radiation emission from InAs nanowires (NW) grown on a GaAs substrate. We also compare the emitted power of the…”
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Study of the microstructure in MOVPE grown InN epitaxial layers by high resolution x-ray diffraction by Ganguli, T., Kadir, A., Gokhale, M., Kumar, R., Shah, A.P., Arora, B.M., Bhattacharya, A.

“…We have carried out detailed study of the microstructure of InN epitaxial layers using high resolution XRD measurements. The type of dislocations and their…”
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