Search Results - "Gokhale, M. R."

MOVPE growth of semipolar III-nitride semiconductors on CVD graphene by Gupta, Priti, Rahman, A.A., Hatui, Nirupam, Gokhale, M.R., Deshmukh, Mandar M., Bhattacharya, Arnab

“…We report the growth and characterization of group III-nitride semiconductor layers on graphene grown by chemical vapour deposition. GaN, AlGaN alloys, and InN…”
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Wide Bandwidth Nanowire Electromechanics on Insulating Substrates at Room Temperature by Abhilash, T. S, Mathew, John P, Sengupta, Shamashis, Gokhale, M. R, Bhattacharya, Arnab, Deshmukh, Mandar M

“…We study InAs nanowire resonators fabricated on sapphire substrate with a local gate configuration. The key advantage of using an insulating sapphire substrate…”
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Influence of buffer layers on the microstructure of MOVPE grown a-plane InN by Laskar, Masihhur R., Ganguli, Tapas, Kadir, Abdul, Hatui, Nirupam, Rahman, A.A., Shah, A.P., Gokhale, M.R., Bhattacharya, Arnab

“…We report a comparative study of the microstructure of a-plane ( 1 1 2 ¯ 0 ) InN epilayers grown on different buffer layers via metalorganic vapour phase…”
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MOVPE growth and characterization of a -plane AlGaN over the entire composition range by Laskar, Masihhur R., Ganguli, Tapas, Rahman, A. A., Shah, A. P., Gokhale, M. R., Bhattacharya, Arnab

“…We report the metal organic vapor phase epitaxy (MOVPE) growth and characterization of non‐polar (11$ \bar 2 $0) a ‐plane Alx Ga1–xN on (1$ \bar 1 $02) r…”
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MOVPE growth and characterization of InN/GaN single and multi-quantum well structures by Kadir, Abdul, Gokhale, M.R., Bhattacharya, Arnab, Pretorius, Angelika, Rosenauer, Andreas

“…We report on the growth of InN/GaN quantum well structures via metal organic vapour-phase epitaxy. From X-ray diffraction and transmission electron microscopy…”
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Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor by Kadir, Abdul, Ganguli, Tapas, Gokhale, M.R., Shah, A.P., Chandvankar, S.S., Arora, B.M., Bhattacharya, Arnab

“…We report the synthesis of InN via low-pressure metal-organic vapour phase epitaxy (MOVPE) in a close-coupled showerhead reactor system. InN layers were…”
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Charge deep level transient spectroscopy of electron traps in MOVPE grown n-GaN on sapphire by Mahmood, Zahid Hasan, Shah, A. P., Kadir, Abdul, Gokhale, M. R., Bhattacharya, Arnab, Arora, B. M.

“…We report investigation of electron traps in n‐GaN, grown on sapphire by metal organic vapour phase epitaxy, by using charge deep level transient spectroscopy…”
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Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy by Lobo, Neysha, Kadir, Abdul, Laskar, Masihhur R., Shah, A.P., Gokhale, M.R., Rahman, A.A., Arora, B.M., Narasimhan, K.L., Bhattacharya, Arnab

“…In this work we have compared the sub-bandgap absorptance of nominally undoped GaN samples grown under different conditions. The absorptance is measured using…”
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Tuning and understanding the emission characteristics of MOVPE-grown self-assembled InAs/InP quantum dots by Bansal, Bhavtosh, Gokhale, M.R., Bhattacharya, Arnab, Arora, B.M.

“…This paper examines the optical properties of self-assembled InAs/InP quantum dots grown by metalorganic vapour phase epitaxy (MOVPE). In a non-equilibrium…”
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A surface-emitting vacuum-deposited organic light emitting device by Bulović, V., Tian, P., Burrows, P. E., Gokhale, M. R., Forrest, S. R., Thompson, M. E.

“…We demonstrate a vacuum-deposited organic light emitting device which emits from its top surface through a transparent indium-tin-oxide anode. This device…”
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Growth kinetics effects on self-assembled InAs ∕ InP quantum dots by Bansal, Bhavtosh, Gokhale, M. R., Bhattacharya, Arnab, Arora, B. M.

“…A systematic manipulation of the morphology and the optical emission properties of metalorganic vapor phase epitaxy grown ensembles of InAs ∕ InP quantum dots…”
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Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers by Gokhale, M.R., Studenkov, P.V., Wei, J., Forrest, S.R.

“…We demonstrate high-performance Al-free InGaAsN-GaAs-InGaP-based long-wavelength quantum-well (QW) lasers grown on GaAs substrates by gas-source molecular beam…”
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Anisotropic structural and optical properties of a-plane (112¯) AlInN nearly-lattice-matched to GaN by Laskar, Masihhur R., Ganguli, Tapas, Rahman, A. A., Arora, Ashish, Hatui, Nirupam, Gokhale, M. R., Ghosh, Sandip, Bhattacharya, Arnab

“…We report epitaxial growth of a-plane (112¯0) AlInN layers nearly-lattice-matched to GaN. Unlike for c-plane oriented epilayers, a-plane Al1−xInxN cannot be…”
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Efficient coupling in integrated twin-waveguide lasers using waveguide tapers by Studenkov, P.V., Gokhale, M.R., Forrest, S.R.

“…We demonstrate a 1.55-μm wavelength, InGaAsP-InP, twin-waveguide (TG) laser integrated with passive ridge waveguides using low-loss taper couplers. The lateral…”
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Monolithic integration of an all-optical Mach-Zehnder demultiplexer using an asymmetric twin-waveguide structure by Studenkov, P.V., Gokhale, M.R., Lin, W., Glesk, I., Prucnal, P.R., Forrest, S.R.

“…We demonstrate monolithic integration of a twin-waveguide Mach-Zehnder terahertz optical asymmetric demultiplexer (MZ-TOAD). The InGaAsP-InP device operates at…”
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High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers by Laskar, Masihhur R., Ganguli, Tapas, Hatui, Nirupam, Rahman, A.A., Gokhale, M.R., Bhattacharya, Arnab

“…We report a comprehensive characterization of the microstructure of non-polar ( 1 1 2 ¯ 0 ) a-plane Al x Ga 1− x N epilayers on ( 1 1 ¯ 0 2 ) r-plane sapphire…”
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The effects of macroscopic inhomogeneities on the magnetotransport properties of the electron gas in two dimensions by Karmakar, B., Gokhale, M.R., Shah, A.P., Arora, B.M., de Lang, D.T.N., de Visser, A., Ponomarenko, L.A., Pruisken, A.M.M.

“…In experiments on electron transport, the macroscopic inhomogeneities in the sample play a fundamental role. In this paper and a subsequent one, we introduce…”
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Incidence and Predictors of Human Immunodeficiency Virus Type 1 Seroconversion in Patients Attending Sexually Transmitted Disease Clinics in India by Mehendale, Sanjay M., Rodrigues, Jeanette J., Brookmeyer, Ronald S., Gangakhedkar, Raman R., Divekar, Anand D., Gokhale, Manjusha R., Risbud, Arun R., Paranjape, Ramesh S., Shepherd, Mary E., Rompalo, Ann E., Sule, Rajiv R., Tolat, Sunil N., Jadhav, Vijay D., Quinn, Thomas C., Bollinger, Robert C.

“…The first estimates of the seroincidence of human immunodeficiency virus type 1 (HIV-1) and of the risk factors for seroconversion in a cohort of high-risk…”
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Polarized photoluminescence and absorption in A -plane InN films by Bhattacharyya, Jayeeta, Ghosh, Sandip, Gokhale, M. R., Arora, B. M., Lu, Hai, Schaff, W. J.

“…The authors report the observation of strong polarization anisotropy in the photoluminescence (PL) and the absorption spectra of [ 11 2 ¯ 0 ] oriented A -plane…”
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Asymmetric twin-waveguide 1.55-μm wavelength laser with a distributed Bragg reflector by Studenkov, P.V., Xia, F., Gokhale, M.R., Forrest, S.R.

“…We demonstrate a single frequency, 1.55 μm wavelength laser based on an asymmetric twin-waveguide structure using a single growth step and a simple fabrication…”
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