Search Results - "Gokce, O.H."

Emissivity measurements and modeling of silicon-related materials: An overview by RAVINDRA, N. M, SOPORI, B, GOKCE, O. H, CHENG, S. X, SHENOY, A, JIN, L, ABEDRABBO, S, CHEO, W, ZHANG, Y

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Effects of annealing on X-ray-amorphous CVD W-Si-N barrier layer materials by Gokce, O.H., Amin, S., Ravindra, N.M., Szostak, D.J., Paff, R.J., Fleming, J.G., Galewski, C.J., Shallenberger, J., Eby, R.

“…The influence of furnace and rapid thermal annealing (RTA) on X-ray-amorphous, chemically vapor deposited (CVD) W-Si-N barrier layers on SiO 2/Si structures…”
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Radiative properties of SIMOX by Ravindra, N.M., Abedrabbo, S., Gokce, O.H., Tong, F., Patel, A., Velagapudi, R., Williamson, G.D., Maszara, W.P.

“…The first experimental results of the temperature dependent radiative properties of separation by implantation of oxygen (SIMOX) wafers, in the literature,…”
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