Search Results - "Goh, K.E.J."

Scanning probe microscopy for silicon device fabrication by Simmons, M.Y., Ruess, F.J., Goh, K.E.J., Hallam, T., Schofield, S.R., Oberbeck, L., Curson, N.J., Hamilton, A.R., Butcher, M.J., Clark, R.G., Reusch, T.C.G.

“…We present a review of a detailed fabrication strategy for the realisation of nano and atomic-scale devices in silicon using phosphorus as a dopant and a…”
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Tailoring surface reflectance through nanostructured materials design for energy-efficient applications by Yeo, R.J., Wu, W.-Y., Tomczak, N., Ji, R., Wang, S., Wang, X., Kong, J., Liu, H., Goh, K.E.J., Xu, J., Loh, X.J., Zhu, Q.

“…The use of nanotechnology in surface engineering allows for precise tailoring of surface properties to achieve an improved performance of the final product. We…”
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Low temperature nanoscale electronic transport on the MoS2surface by Thamankar, R., Yap, T.L., Goh, K.E.J., Troadec, C., Joachim, Christian

“…Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS2) surface were performed at low temperature (30 K) under ultra-high vacuum…”
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Bilayer gate dielectric study by scanning tunneling microscopy by Ong, Y. C., Ang, D. S., Pey, K. L., O'Shea, S. J., Goh, K. E. J., Troadec, C., Tung, C. H., Kawanago, T., Kakushima, K., Iwai, H.

“…An advanced bilayer gate dielectric stack consisting of Sc 2 O 3 ∕ La 2 O 3 ∕ Si O x annealed in nitrogen at 300 ° C was studied by scanning tunneling…”
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Effect of encapsulation temperature on Si:P {delta}-doped layers by Goh, K.E.J., Oberbeck, L., Simmons, M.Y., Hamilton, A.R., Clark, R.G.

“…We present a systematic study of the effect of encapsulation temperature on dopant segregation and electronic transport in Si:P {delta}-doped layers. We…”
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Minimisation of P surface segregation during epitaxial silicon growth for the fabrication of a silicon-based quantum computer by Oberbeck, L., Curson, N.J., Hallam, T., Simmons, M.Y., Goh, K.E.J., Schofield, S.R., Ruess, F.J., Clark, R.G.

“…To optimise the fabrication process for a silicon based quantum computer the surface segregation/diffusion of phosphorus atoms in silicon is investigated on an…”
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