High-Performance Amplifier Package Design for Heterogenous Integration on Si-interposer

The RF design for the wire bond and flip-chip Power Amplifier (PA) MMIC on the High Resistivity (HiR) Si-interposer are presented in this paper. The HiR Si-interposer is to support multiple off-the-shelf RF and Baseband ICs for complex advanced RF frontend modules using heterogeneous integration. A...

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Bibliographic Details
Published in:	2023 IEEE 73rd Electronic Components and Technology Conference (ECTC) pp. 1838 - 1843
Main Authors:	Lim, Teck Guan, Zho, Lin, Tippabhotla, Sasi Kumar, Lin, Ji, Chinq, Jong Ming, Wu, JiaQi, Gongyue, Tang, Ching, Eva Wai Leong, Ng, Yong Chyn, Chui, King Jien, Lu, Wei Jia, Goh, Chee Heng, Lin Pek, Sek, Loh, Jun Wei Agnes
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-05-2023
Subjects:	Heating systems Heterogenous Integration Integrated circuits Multichip modules Power Amplifier integration Power amplifiers Radio frequency RF frontend Semiconductor device measurement Si-interposer System-in-Package Wires
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Summary:	The RF design for the wire bond and flip-chip Power Amplifier (PA) MMIC on the High Resistivity (HiR) Si-interposer are presented in this paper. The HiR Si-interposer is to support multiple off-the-shelf RF and Baseband ICs for complex advanced RF frontend modules using heterogeneous integration. A two-sided thermal cooling solution is adopted for this high-performance integration architecture. The high-power dissipation MMIC is integrated using flip-chip assembly so that the heat can be dissipated through the top heat spreader. For the other ICs, they are integrated using wire bond assembly so that their heat will be dissipated through the bottom HiR Si-interposer.
ISSN:	2377-5726
DOI:	10.1109/ECTC51909.2023.00315