Search Results - "Goguet, J."
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1
CNTFET Modeling and Reconfigurable Logic-Circuit Design
Published in IEEE transactions on circuits and systems. I, Regular papers (01-11-2007)“…This paper examines aspects of design technology required to explore advanced logic-circuit design using carbon nanotube field-effect transistor (CNTFET)…”
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Journal Article -
2
Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design
Published in IEEE transactions on electron devices (01-06-2008)“…We present a computationally efficient physics-based compact model designed for the conventional CNTFET featuring a MOSFET-like operation. A large part of its…”
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Journal Article -
3
Implementation of Electron-Phonon Scattering in a CNTFET Compact Model
Published in IEEE transactions on electron devices (01-06-2009)“…This paper presents an extension of a ballistic compact model to the case of nonballistic transport for the conventional carbon nanotube FET featuring a…”
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Journal Article -
4
Implementation of ElectronaPhonon Scattering in a CNTFET Compact Model
Published in IEEE transactions on electron devices (01-01-2009)“…This paper presents an extension of a ballistic compact model to the case of nonballistic transport for the conventional carbon nanotube FET featuring a…”
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Journal Article -
5
Compact Model of a Dual Gate CNTFET: Description and Circuit Application
Published in 2008 8th IEEE Conference on Nanotechnology (01-08-2008)“…We present a physical compact model of a dual gate carbon nanotube field effect transistor (DG CNTFET). To obtain an accurate and predictive model, the…”
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Conference Proceeding -
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Analysis of CNTFET physical compact model
Published in International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006 (2006)“…On the basis of acquired knowledge, the paper present a DC compact model designed for the conventional CNTFET (C-CNTFET) featuring a doping profile similar to…”
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Conference Proceeding -
7
A charge approach for a compact model of Dual Gate CNTFET
Published in 2008 3rd International Conference on Design and Technology of Integrated Systems in Nanoscale Era (01-03-2008)“…We present a physical approach to model the dual gate CNTFET. In this transistor, whose type (N or P) depends on the back gate bias, the charge of each region…”
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Conference Proceeding