Search Results - "Gogneau, N"

Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography by Di Russo, E, Moyon, F, Gogneau, N, Largeau, L, Giraud, E, Carlin, J.-F, Grandjean, N, Chauveau, J. M, Hugues, M, Blum, I, Lefebvre, W, Vurpillot, F, Blavette, D, Rigutti, L

“…Ternary semiconductor alloys based on the A y B1–y C stoichiometry are widely employed in electronic devices, and their composition plays a key role in band…”
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Probing elastic properties of nanowire-based structures by Lu, L., Charron, E., Glushkov, E., Glushkova, N., Bonello, B., Julien, F. H., Gogneau, N., Tchernycheva, M., Boyko, O.

“…We report the analysis of elastic properties of a composite medium consisting of GaN nanowires embedded into a dielectric matrix, which constitutes the active…”
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From nanographene to monolayer graphene on 6H-SiC(0001) substrate by Ouerghi, A., Ridene, M., Mathieu, C., Gogneau, N., Belkhou, R.

“…Graphene quantum dots, nanoribbons, and nanographene are great promising in various applications owing to the quantum confinement and edge effects. Here we…”
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Control of the degree of surface graphitization on 3C-SiC(100)/Si(100) by Gogneau, N., Balan, A., Ridene, M., Shukla, A., Ouerghi, A.

“…The current method of growing graphene by thermal decomposition of 3C-SiC(100) on silicon substrates is technologically attractive. Here, we investigate the…”
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Ultra-thin engraved 3D taper structure in a crystalline material using FIB by Fang, L., Gogneau, N., Oudar, J.L., Bourhis, E., Gierak, J.

“…[Display omitted] •We experimentally investigated the sputtering yield of crystalline InP using focused Ga+ beam.•An ultra-thin taper structure was fabricated…”
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Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy by Monroy, E., Sarigiannidou, E., Fossard, F., Gogneau, N., Bellet-Amalric, E., Rouvière, J.-L., Monnoye, S., Mank, H., Daudin, B.

“…We have studied the surface kinetics of N-face GaN during molecular-beam epitaxial growth by investigating the Ga wetting and the surface morphology. In the…”
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GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN by Adelmann, C., Gogneau, N., Sarigiannidou, E., Rouvière, J.-L., Daudin, B.

“…It is shown that a two-dimensional GaN layer grown on (0001) AlN under Ga-rich conditions remains two-dimensional while annealing under a Ga flux due to a…”
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Time-resolved characterization of InAsP∕InP quantum dots emitting in the C-band telecommunication window by Hostein, R., Michon, A., Beaudoin, G., Gogneau, N., Patriache, G., Marzin, J.-Y., Robert-Philip, I., Sagnes, I., Beveratos, A.

“…The dynamic response of InAsP quantum dots, grown on InP(001) substrates by low-pressure metalorganic vapor phase epitaxy emitting around 1.55μm, is…”
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High Sensitivity Piezogenerator Based on GaN Nanowires by L. Lu, N. Jamond, E. Lefeuvre, P. Chrétien, F. Houzé, L. Travers, J. C. Harmand, F. Glas, N. Gogneau, F. H. Julien, M. Tchernycheva

“…We report on a prototype of piezogenerator based on vertically-aligned GaN nanowires grown by Plasma-Assisted Molecule Beam Epitaxy (PAMBE). Our device…”
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Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots by Gogneau, N., Fossard, F., Monroy, E., Monnoye, S., Mank, H., Daudin, B.

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In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy by Monroy, E., Gogneau, N., Jalabert, D., Bellet-Amalric, E., Hori, Y., Enjalbert, F., Dang, Le Si, Daudin, B.

“…Epitaxial growth of quaternary AlGaInN compounds by plasma-assisted molecular beam epitaxy has been demonstrated. Two-dimensional growth is achieved under In…”
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Density of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy: Independent effects of InAs and cap-layer growth rates by Michon, A., Patriarche, G., Beaudoin, G., Saint-Girons, G., Gogneau, N., Sagnes, I.

“…This letter studies and differentiates the influence of both InAs growth rate and cap-layer growth rate on the density of capped InAs∕InP(001) quantum dots…”
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Correlation between optical properties and interface morphology of GaAs∕AlGaAs quantum wells by Moret, N., Oberli, D. Y., Pelucchi, E., Gogneau, N., Rudra, A., Kapon, E.

“…We investigate the embedded interfaces of GaAs∕AlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (<1°)-misoriented (001) substrates…”
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One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots: First step towards single-photon source applications by Gogneau, N., Le Gratiet, L., Cambril, E., Beaudoin, G., Patriarche, G., Beveratos, A., Hostein, R., Robert-Philip, I., Marzin, J.Y., Sagnes, I.

“…We demonstrate the feasibility of a new approach based on the nano selective area growth (nano-SAG), which allows the precise spacial localization, in the…”
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Raman study and theoretical calculations of strain in GaN quantum dot multilayers by Cros, A., Garro, N., Llorens, J. M., García-Cristóbal, A., Cantarero, A., Gogneau, N., Monroy, E., Daudin, B.

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GaN quantum dots by molecular beam epitaxy by Daudin, B, Adelmann, C, Gogneau, N, Sarigiannidou, E, Monroy, E, Fossard, F, Rouvière, J.L

“…The conditions to grow GaN quantum dots (QDs) by plasma-assisted molecular beam epitaxy will be examined. It will be shown that, depending on the Ga/N ratio…”
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Assessment of AlGaN Growth by Plasma Assisted MBE Using In as a Surfactant by Monroy, E., Daudin, B., Gogneau, N., Bellet-Amalric, E., Jalabert, D., Brault, J.

“…In this work, we evaluate the feasibility of In as a surfactant for AlGaN growth by plasma assisted molecular beam epitaxy. We have delimited the range of…”
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Controlling the Morphology of GaN Layers Grown on AlN in Ga Self-Surfactant Conditions: from Quantum Wells to Quantum Dots by Adelmann, C., Daudin, B., Monroy, E., Sarigiannidou, E., Rouvière, J.L., Hori, Y., Brault, J., Gogneau, N., Fanget, S., Bru-Chevallier, C.

“…We show that the growth mode of GaN deposited by plasma‐assisted molecular beam epitaxy on AlN can be controlled by tuning Ga/N ratio. This enables to grow…”
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Selective growth of site-controlled Quantum Dots by Gogneau, N, Fain, B, Le Gratiet, L, Patriarche, G, Largeau, L, Beaudoin, G, Ulysse, C, Elvira, D, Braive, R, Beveratos, A, Robert-Philip, I, Sagnes, I

“…Nanoselective growth of site-controlled quantum dot is reported. InAs(P)/InP QDs are grown by MOVPE on patterned substrate. Partial patterning of the substrate…”
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Time-resolved characterization of In As P ∕ In P quantum dots emittingin the C -band telecommunication window by Hostein, R., Michon, A., Beaudoin, G., Gogneau, N., Patriache, G., Marzin, J.-Y., Robert-Philip, I., Sagnes, I., Beveratos, A.

“…The dynamic response of InAsP quantum dots, grown on InP(001) substrates by low-pressure metalorganic vapor phase epitaxy emitting around 1 .55 μ m , is…”
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