Search Results - "Goehlich, Andreas"

Fabrication and electrochemical characterization of ruthenium nanoelectrodes by Allani, Sonja, Jupe, Andreas, Figge, Martin, Goehlich, Andreas, Vogt, Holger

“…The Fraunhofer IMS has recently developed a technique for producing nanoelectrodes that are generated by atomic layer deposition (ALD) in a via deep reactive…”
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Analytical model for thin-film SOI PIN-diode leakage current by Schmidt, Andrei, Dreiner, Stefan, Vogt, Holger, Goehlich, Andreas, Paschen, Uwe

“…•Analytical thin-film SOI pin-diode leakage current model.•The back-gate potential dependence of the leakage current is considered.•Model verification by…”
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PECVD of poly-SiGe/Ge layers with increased total gas flow by Wang, Qiang, Göhlich, Andreas, Ruß, Marco, Yang, Pin, Vogt, Holger

“…•Poly-SiGe and Poly-Ge are deposited at substrate temperatures below 380°C with high total gas flow.•Ge-content in the deposited SiGe layers increases with the…”
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Encapsulation of implantable integrated MEMS pressure sensors using polyimide epoxy composite and atomic layer deposition by Gembaczka, P, Görtz, M, Celik, Y, Jupe, A, Stühlmeyer, M, Goehlich, A, Vogt, H, Mokwa, W, Kraft, M

“…Implantable MEMS sensors are an enabling technology for diagnostic analysis and therapy in medicine. The encapsulation of such miniaturized implants remains a…”
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Tapering of nanoelectrodes for an intracellular contact via a double hard mask technique by Allani, Sonja, Jupe, Andreas, Figge, Martin, Goehlich, Andreas, Vogt, Holger

“…To realize an intracellular contact between nanoelectrodes and cells, a sufficient small electrode diameter is needed [1]. A sacrificial layer process…”
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Analysis of Semiconductor Process Variations by Means of Hierarchical Median Polish by Willsch, Benjamin, Hauser, Julia, Dreiner, Stefan, Goehlich, Andreas, Kappert, Holger, Vogt, Holger

“…The understanding and controlling of semiconductor process variation is crucial to the performance, functionality and reliability of modern ICs. Due to the…”
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Statistical tests to determine spatial correlations in the response behavior of PUF by Willsch, Benjamin, Hauser, Julia, Dreiner, Stefan, Goehlich, Andreas, Vogt, Holger

“…The level of security provided by physically unclonable functions (PUFs) strongly depends on the unpredictability of its challenge-response behavior…”
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ALD-based 3D-capacitors for harsh environments by Dietz, Dorothee, Celik, Yusuf, Goehlich, Andreas, Vogt, Holger

“…Passive components like capacitors for harsh environments become more and more important, e. g. in the field of deep drilling, aerospace or in the automotive…”
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Determination of time-of-flight distributions of sputtered oxygen and carbon atoms by resonant multi-photon ionization by Goehlich, Andreas, Goehlich, Alexandra, Döbele, H.F

“…In this contribution measurements of time-of-flight (TOF) distributions of sputtered oxygen and carbon atoms obtained at a recently completed set-up are…”
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