Search Results - "Godoy Fo, J."

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    Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work function

    Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work function by Lima, L.P.B., Diniz, J.A., Doi, I., Godoy Fo, J.

    Published in Microelectronic engineering (01-04-2012)
    “…Titanium nitride (TiN) films have been used as gate electrodes in metal–oxide-semiconductor (MOS) capacitors, which were fabricated with SiO2 layer as gate…”
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    Journal Article Conference Proceeding
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    Characteristics of Silicon Oxide Gate MOS Capacitors Formed by Rapid Thermal Oxidation and Annealing

    Characteristics of Silicon Oxide Gate MOS Capacitors Formed by Rapid Thermal Oxidation and Annealing by Cavarsan, F.A., Toma, A., Fo, J.G., Diniz, J.A., Doi, I.

    “…Ultra-thin silicon oxide (SiO 2 ) insulating films have been obtained by rapid thermal oxidation (RTO) and annealing (RTA), using different temperatures of…”
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    Conference Proceeding
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