Search Results - "Godo, K"

Illuminance meter calibration with an LED spectrally tunable light source by Godo, K, Tamura, Y, Watari, O

“…Calibration of an illuminance meter is indispensable for accurate measurement of the illuminance of indoor lighting and daylight. In recent years, because of…”
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Development of LED-based standard source for total luminous flux calibration by Nakazawa, Y, Godo, K, Niwa, K, Zama, T, Yamaji, Y, Matsuoka, S

“…For total luminous flux calibration by a sphere-spectroradiometer system in 2π geometry, a new LED-based standard light source (standard LED) covering the full…”
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ZnCdTe/ZnTe/ZnMgSeTe quantum-well structures for the application to pure-green light-emitting devices by Chang, J. H., Song, J. S., Godo, K., Yao, T., Shen, M. Y., Goto, T.

“…A ZnCdTe/ZnTe/ZnMgSeTe quantum-well (QW) structure lattice matched to ZnTe is proposed for the light-emitting devices in the pure-green wavelength region. Thin…”
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ZnTe-Based Light-Emitting-Diodes Grown on ZnTe Substrates by Molecular Beam Epitaxy by Chang, J.H., Takai, T., Godo, K., Song, J.S., Koo, B.H., Hanada, T., Yao, T.

“…We have investigated the ZnTe‐based material system for the application to light‐emitting devices. To this end, ZnTe homoepitaxy techniques have been developed…”
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Composition dependence of the energy gap of Zn1−x−yMgxBeySe quaternary alloys nearly lattice matched to GaAs by Godo, K., Makino, H., Cho, M. W., Chang, J. H., Yamazaki, Y., Yao, T., Shen, M. Y., Goto, T.

“…The composition dependence of the energy gap (Eg) of Zn1−x−yMgxBeySe quaternary alloys grown by molecular-beam epitaxy was investigated. The energy gap of…”
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Molecular Beam Epitaxy of Al Doped n-ZnSe by Takai, T., Chang, J.H., Godo, K., Hanada, T., Yao, T.

“…Molecular beam epitaxy of Al doped n‐type ZnSe is studied. Growth conditions such as Al cell temperature and substrate temperature are systematically examined…”
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Electrical properties of heavily Al-doped ZnSe grown by molecular beam epitaxy by Oh, D.C., Chang, J.H., Takai, T., Song, J.S., Godo, K., Park, Y.K., Shindo, K., Yao, T.

“…We study the electrical properties of heavily Al-doped ZnSe grown by molecular beam epitaxy, whose electron concentration is saturated. Hall measurements show…”
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Low-threshold optically pumped lasing at 444 nm at room temperature with high characteristic temperature from Be-chalcogenide-based single-quantum-well laser structures by Chang, J. H., Cho, M. W., Godo, K., Makino, H., Yao, T., Shen, M. Y., Goto, T.

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Optical characterization of CdTe/ZnSe fractional monolayer structures grown by atomic layer epitaxy by Lee, J.Y., Chang, J.H., Yang, M., Ahn, H.S., Yi, S.N., Goto, K., Godo, K., Makino, H., Cho, M.W., Yao, T., Song, J.S.

“…Luminescence properties of CdTe/ZnSe fractional monolayer grown by atomic layer epitaxy have been investigated. To investigate the origin of the highly…”
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Band Filling and Thermal Escape in CdTe/ZnTe Quantum Dots Grown by Molecular Beam Epitaxy by Godo, K., Makino, H., Takai, T., Chang, J.H., Yao, T., Sasao, T., Goto, T.

“…We have investigated the effects of band filling and thermal escape on the temperature dependence and excitation power dependence of photoluminescence of CdTe…”
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Characterization of ZnSe/ZnMgBeSe single quantum wells by Chang, J.H, Cho, M.W, Hong, S.K, Godo, K, Makino, H, Yao, T, Shen, M.Y, Goto, T

“…We have investigated the optical and structural properties of ZnMgBeSe/ZnSe/ZnMgBeSe quantum-well (QW) structures grown on GaAs (001) substrates by molecular…”
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Low-temperature growth of nitrogen-doped BeTe and ZnSe/BeTe:N superlattices for delta doping by Kojima, K., Song, J.S., Godo, K., Oh, D.C., Chang, J.H., Cho, M.W., Yao, T.

“…We propose ZnSe/BeTe:N superlattice (SL) as a new p-type cladding layer with improved p-type dopability, in which nitrogen-doped BeTe (N-doped) layers are…”
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High quality ZnTe heteroepitaxy layers using low-temperature buffer layers by Chang, Jiho, Godo, Kenji, Song, Junsuk, Oh, Dongcheol, Lee, Changwoo, Yao, Takafumi

“…Low dislocation density ZnTe heteroepitaxial layers are achieved by inserting a thin ZnTe buffer layer at low growth temperature (LT-buffer) followed by…”
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Strong luminescence due to localized excitons in CdTe/ZnSe fractional monolayer structures by Chang, Jiho, Takai, Toshiaki, Godo, Kenji, Makino, Hisao, Goto, Takenari, Yao, Takafumi

“…Highly efficient luminescence at room temperature is achieved from a novel CdTe(thickness ⩽2 ML )/ZnSe fractional monolayer heterostructures (FMS) grown by…”
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Strong luminescence due to localized excitons in CdTe/ZnSe fractional monolayer by Takai, T., Jiho Chang, Godo, K., Goto, T., Yao, T.

“…Although the application of semiconductor quantum dots to light emitters has been expected, only a few successful achievements have been reported mainly due to…”
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The growth of high quality heteroepitaxy ZnTe layers using low-temperature buffer by Jiho Chang, Godo, K., Jungjin Kim, Dongcheol Oh, Takafumi Yao, Changwoo Lee

“…Although there have been successful demonstrations of buffer layer growth for the heteroepitaxy of large mismatched systems, however, general selection rule…”
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Electrical properties of highly Al-doped ZnSe grown by molecular beam epitaxy by Oh, D.C., Chang, J.H., Takai, T., Song, J.S., Kim, J.J., Godo, K., Park, Y.G., Shindo, K., Yao, T.

“…Conductivity control is one of the most important issues in wide band gap semiconductors such as ZnSe. Recently, we have reported the successful growth of high…”
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