Search Results - "Godfrey, D.J."

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    An Implantable MOSFET Dosimeter for the Measurement of Radiation Dose in Tissue During Cancer Therapy by Beyer, G.P., Mann, G.G., Pursley, J.A., Espenhahn, E.T., Fraisse, C., Godfrey, D.J., Oldham, M., Carrea, T.B., Bolick, N., Scarantino, C.W.

    Published in IEEE sensors journal (01-01-2008)
    “…This paper describes the functionality, radiation characteristics, and clinical implementation of an implantable MOSFET radiation detector (dosimeter). The…”
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    Journal Article
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    The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors by Shafi, Z.A., Gibbings, C.J., Ashburn, P., Post, I.R.C., Tuppen, C.G., Godfrey, D.J.

    Published in IEEE transactions on electron devices (01-08-1991)
    “…Si/SiGe heterojunction transistors were fabricated with 21.4 nm, heavily doped (5*10/sup 19/ cm/sup -3/) bases. Electrical results from these transistors are…”
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    Journal Article
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    Engineering the world's largest DGPS Network by Wolfe, D.B., Judy, C.L., Haukkala, E.J., Godfrey, D.J.

    “…The U.S. Coast Guard's is part of a team that is implementing the world's largest ground-based GPS augmentation service, Nationwide DGPS (NDGPS). The U.S…”
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    Conference Proceeding
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    A MODEL FOR COUPLED DOPANT DIFFUSION IN SILICON by COWERN, N.E.B., GODFREY, D.J.

    Published in Compel (01-01-1987)
    “…The simulation of coupled dopant diffusion in silicon is becoming increasingly important in integrated circuit technology, as device dimensions are reduced and…”
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    Journal Article
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    Rapid isothermal processing with electron beams of small-geometry CMOS devices by Yallup, K.J., Godfrey, D.J., McMahon, R.A., Ahmed, H.

    Published in IEEE transactions on electron devices (01-08-1987)
    “…Small-geometry CMOS devices with shallow n + and p + source-drain regions formed by arsenic and boron difluoride ion implantation, respectively, have been…”
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    Journal Article
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    Rapid thermal annealing of metastable and stable Si/Si1-xGex heterojunction bipolar transistors by Shafi, Z.A., Martin, A.S.R., Whitehurst, J., Ashburn, P., Godfrey, D.J., Gibbings, C.J, Post, I.R.C., Tuppen, C.G., Booker, G.R., Jones, M.E.

    “…The effect of Rapid Thermal Annealing (RTA) treatment on the base and collector currents of Si/Si 1-x Ge x HBTs is investigated. Whilst the base current is…”
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    Conference Proceeding
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    Temperature dependence of DC characteristics of Si/SiGe heterojunction bipolar transistors by Martin, A.S.R., Gell, M.A., Reeder, A.A., Godfrey, D.J., Jones, M.E., Gibbings, C.J., Tuppen, C.G.

    “…Silicon/silicon-germanium heterojunction bipolar transistors incorporating a strained layer of silicon - germanium alloy have been fabricated and their DC…”
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    Conference Proceeding
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    Names of drugs by Maltby, J W

    Published in British Medical Journal (15-10-1977)
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    Journal Article