Search Results - "Godfrey, D.J."
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An Implantable MOSFET Dosimeter for the Measurement of Radiation Dose in Tissue During Cancer Therapy
Published in IEEE sensors journal (01-01-2008)“…This paper describes the functionality, radiation characteristics, and clinical implementation of an implantable MOSFET radiation detector (dosimeter). The…”
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Long-Term Experience in an Equal Access Health Care System Using Moderately Hypofractionated Radiotherapy for High Risk Prostate Cancer in a Predominately African American Population With Unfavorable Disease
Published in International journal of radiation oncology, biology, physics (01-11-2020)Get full text
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The Impact of Biologically Equivalent Dose on Tumor Control in Unresectable Hepatocellular Carcinoma
Published in International journal of radiation oncology, biology, physics (01-10-2017)Get full text
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Dosimetric Predictors of Toxicity in Patients With Early-Stage Prostate Cancer Treated With Moderately Hypofractionated IMRT or PBT: A Multi-Institutional Analysis
Published in International journal of radiation oncology, biology, physics (01-11-2021)“…Limited published data address modifiable risk factors for significant toxicity complicating moderately hypofractionated schedules of intensity-modulated…”
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The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors
Published in IEEE transactions on electron devices (01-08-1991)“…Si/SiGe heterojunction transistors were fabricated with 21.4 nm, heavily doped (5*10/sup 19/ cm/sup -3/) bases. Electrical results from these transistors are…”
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Engineering the world's largest DGPS Network
Published in OCEANS 2000 MTS/IEEE Conference and Exhibition. Conference Proceedings (Cat. No.00CH37158) (2000)“…The U.S. Coast Guard's is part of a team that is implementing the world's largest ground-based GPS augmentation service, Nationwide DGPS (NDGPS). The U.S…”
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A MODEL FOR COUPLED DOPANT DIFFUSION IN SILICON
Published in Compel (01-01-1987)“…The simulation of coupled dopant diffusion in silicon is becoming increasingly important in integrated circuit technology, as device dimensions are reduced and…”
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Rapid isothermal processing with electron beams of small-geometry CMOS devices
Published in IEEE transactions on electron devices (01-08-1987)“…Small-geometry CMOS devices with shallow n + and p + source-drain regions formed by arsenic and boron difluoride ion implantation, respectively, have been…”
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Rapid thermal annealing of metastable and stable Si/Si1-xGex heterojunction bipolar transistors
Published in ESSDERC '91: 21st European Solid State Device Research Conference (01-09-1991)“…The effect of Rapid Thermal Annealing (RTA) treatment on the base and collector currents of Si/Si 1-x Ge x HBTs is investigated. Whilst the base current is…”
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Temperature dependence of DC characteristics of Si/SiGe heterojunction bipolar transistors
Published in ESSDERC '90: 20th European Solid State Device Research Conference (01-09-1990)“…Silicon/silicon-germanium heterojunction bipolar transistors incorporating a strained layer of silicon - germanium alloy have been fabricated and their DC…”
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