Search Results - "Gobronidze, V."

Surface passivation of GaAs using a Ge interface control layer by Jishiashvili, D., Gobsch, G., Ecke, G., Gobronidze, V., Mtskeradze, G., Shiolashvili, Z.

“…The effective surface passivation is a key to achieve useful metal–insulator–semiconductor devices on GaAs. In this work, the composition and structure of the…”
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Photocatalytic activity of ZnO nanomaterials with different morphologies by Gelashvili, G., Gelenidze, D., Jishiashvili, D., Shiolashvili, Z., Makhatadze, N., Jishiashvili, A., Gobronidze, V.

“…The influence of ZnO nanomaterial morphologies on their photocatalytic activity was studied. The ZnO nanobelts and the network of hexagonal disks were grown by…”
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Synthesis of germanium nitride nanowires by Jishiashvili, D., Makhatadze, N., Shiolashvili, Z., Gobronidze, V., Jishiashvili, A.

“…The two types of single-crystalline alpha-Ge 3 N 4 nanowires (NWs) were synthesized at 550degC by annealing the crystalline Ge sample in the hydrazine vapor…”
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A study of solid phase reactions at the Ge-GeO/sub 2/ interface by Jishiashvili, D., Shiolashvili, Z., Gobronidze, V., Nakhutsrishvili, I.

“…The sublimation of GeO molecules formed by the solid phase reaction between a-Ge and a-GeO/sub 2/ films (Ge+GeO/sub 2/=2GeO↑) was studied using vacuum…”
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AES study of thermally treated GeO/sub 2//(111)GaAs structures by Jishiashvili, D., Gobsch, G., Ecke, G., Shiolashvili, Z., Gobronidze, V., Nakhutsrishvili, I.

“…Auger electron spectroscopy (AES) was used to study the solid phase surface reactions and Ge diffusion process during the thermal treatment (500-750/spl deg/C)…”
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Development of the amorphous, high resistivity Ge:(O,N) films for radiation-hardened MIS device applications by Jishiashvili, D., Shiolashvili, Z., Janelidze, R., Gobronidze, V., Kutelia, E., Mosidze, L., Nakhutsrishvili, I., Katsiashvili, M.

“…Application of amorphous, high resistivity O- and N-doped Ge films is proposed to solve some radiation hardness problems. The new type of insulating a-Ge:(O,N)…”
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