Search Results - "Gobaut, B."

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  1. 1

    Structural and electronic properties of Bi2Se3 topological insulator thin films grown by pulsed laser deposition by Orgiani, P., Bigi, C., Kumar Das, P., Fujii, J., Ciancio, R., Gobaut, B., Galdi, A., Sacco, C., Maritato, L., Torelli, P., Panaccione, G., Vobornik, I., Rossi, G.

    Published in Applied physics letters (24-04-2017)
    “…We report on epitaxial growth of Bi2Se3 topological insulator thin films by Pulsed Laser Deposition (PLD). X-ray diffraction investigation confirms that Bi2Se3…”
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    Ultralow‐temperature device dedicated to soft X‐ray magnetic circular dichroism experiments by Kappler, J.-P., Otero, E., Li, W., Joly, L., Schmerber, G., Muller, B., Scheurer, F., Leduc, F., Gobaut, B., Poggini, L., Serrano, G., Choueikani, F., Lhotel, E., Cornia, A., Sessoli, R., Mannini, M., Arrio, M.-A., Sainctavit, Ph, Ohresser, P.

    Published in Journal of synchrotron radiation (01-11-2018)
    “…A new ultralow‐temperature setup dedicated to soft X‐ray absorption spectroscopy and X‐ray magnetic circular dichroism (XMCD) experiments is described. Two…”
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    FeGa/MgO/Fe/GaAs(001) magnetic tunnel junction: Growth and magnetic properties by Gobaut, B., Ciprian, R., Salles, B.R., Krizmancic, D., Rossi, G., Panaccione, G., Eddrief, M., Marangolo, M., Torelli, P.

    “…Research on spintronics and on multiferroics leads now to the possibility of combining the properties of these materials in order to develop new functional…”
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    Unraveling the magnetic properties of BiFe0.5Cr0.5O3 thin films by G. Vinai, A. Khare, D. S. Rana, E. Di Gennaro, B. Gobaut, R. Moroni, A. Yu. Petrov, U. Scotti di Uccio, G. Rossi, F. Miletto Granozio, G. Panaccione, P. Torelli

    Published in APL materials (01-11-2015)
    “…We investigate the structural, chemical, and magnetic properties on BiFe0.5Cr0.5O3 (BFCO) thin films grown on (001) (110) and (111) oriented SrTiO3 (STO)…”
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    Growth of Ge islands on SrTiO3 (001) 2×1 reconstructed surface: Epitaxial relationship and effect of the temperature by Gobaut, B., Penuelas, J., Benamrouche, A., Robach, Y., Blanc, N., Favre-Nicolin, V., Renaud, G., Largeau, L., Saint-Girons, G.

    Published in Surface science (01-06-2014)
    “…The structural properties of Ge islands grown by molecular beam epitaxy on SrTiO3 (001) substrates are investigated. We report on the effect of the temperature…”
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    Magnetoresistance of galfenol-based magnetic tunnel junction by Gobaut, B., Vinai, G., Castán-Guerrero, C., Krizmancic, D., Rafaqat, H., Roddaro, S., Rossi, G., Panaccione, G., Eddrief, M., Marangolo, M., Torelli, P.

    Published in AIP advances (01-12-2015)
    “…The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result…”
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    Texture of Ge on SrTiO sub(3) (001) substrates: Evidence for in-plane axiotaxy by Danescu, A, Penuelas, J, Gobaut, B, Saint-Girons, G

    Published in Surface science (01-02-2016)
    “…We report the first experimental evidence of the formation of an axiotaxial texture in a semiconductor/oxide structure, namely Ge deposited by molecular beam…”
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    Predominance of z2-orbitals at the surface of both hole- and electron-doped manganites by Bigi, C., Kumar Chaluvadi, S., Galdi, A., Maritato, L., Aruta, C., Ciancio, R., Fujii, J., Gobaut, B., Torelli, P., Vobornik, I., Panaccione, G., G.Rossi, Orgiani, P.

    “…The electronic properties of hole- and electron-doped manganites were probed by a combination of x-ray absorption and photoemission spectroscopies. Hole-doped…”
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  13. 13

    Texture of Ge on SrTiO3 (001) substrates: Evidence for in-plane axiotaxy by Danescu, A., Penuelas, J., Gobaut, B., Saint-Girons, G.

    Published in Surface science (01-02-2016)
    “…We report the first experimental evidence of the formation of an axiotaxial texture in a semiconductor/oxide structure, namely Ge deposited by molecular beam…”
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  14. 14

    Direct growth of InAsP/InP quantum well heterostructures on Si using crystalline SrTiO3/Si templates by Gobaut, B., Penuelas, J., Cheng, J., Chettaoui, A., Largeau, L., Hollinger, G., Saint-Girons, G.

    Published in Applied physics letters (15-11-2010)
    “…Integrating III-V semiconductors on Si is one of the major challenges of epitaxial growth and presents important applicative interest. We describe here an…”
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    Growth of Ge islands on SrTiO sub(3) (001) 2 x 1 reconstructed surface: Epitaxial relationship and effect of the temperature by Gobaut, B, Penuelas, J, Benamrouche, A, Robach, Y, Blanc, N, Favre-Nicolin, V, Renaud, G, Largeau, L, Saint-Girons, G

    Published in Surface science (01-06-2014)
    “…The structural properties of Ge islands grown by molecular beam epitaxy on SrTiO sub(3) (001) substrates are investigated. We report on the effect of the…”
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    Journal Article
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    Interface accommodation mechanism for weakly interacting epitaxial systems by Danescu, A., Gobaut, B., Penuelas, J., Grenet, G., Favre-Nicolin, V., Blanc, N., Zhou, T., Renaud, G., Saint-Girons, G.

    Published in Applied physics letters (08-07-2013)
    “…We report here an interface accommodation mechanism observed by using in situ grazing incidence X-ray diffraction in the very early stages of Ge epitaxial…”
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    Direct growth of InAsP/InP quantum well heterostructures on Si using crystalline SrTiO 3 / Si templates by Gobaut, B., Penuelas, J., Cheng, J., Chettaoui, A., Largeau, L., Hollinger, G., Saint-Girons, G.

    Published in Applied physics letters (19-11-2010)
    “…Integrating III-V semiconductors on Si is one of the major challenges of epitaxial growth and presents important applicative interest. We describe here an…”
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    Journal Article
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    Direct growth of InAsP/InP quantum well heterostructures on Si using crystalline SrTiO{sub 3}/Si templates by Gobaut, B., Penuelas, J., Cheng, J., Chettaoui, A., Hollinger, G., Saint-Girons, G., Largeau, L.

    Published in Applied physics letters (15-11-2010)
    “…Integrating III-V semiconductors on Si is one of the major challenges of epitaxial growth and presents important applicative interest. We describe here an…”
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    Journal Article
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    Crystallographic orientation transition of InP islands on SrTiO sub(3 substrates with the growth temperature) by Chettaoui, A, Penuelas, J, Gobaut, B, Cheng, J, Benarmouche, A, Robach, Y, Hollinger, G, Saint-Girons, G

    Published in Surface science (01-05-2011)
    “…The structural properties of InP islands grown by molecular beam epitaxy on SrTiO sub(3 substrates are studied. The evolution of the semiconducting islands…”
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    Crystallographic orientation transition of InP islands on SrTiO 3 substrates with the growth temperature by Chettaoui, A., Penuelas, J., Gobaut, B., Cheng, J., Benarmouche, A., Robach, Y., Hollinger, G., Saint-Girons, G.

    Published in Surface science (2011)
    “…The structural properties of InP islands grown by molecular beam epitaxy on SrTiO 3 substrates are studied. The evolution of the semiconducting islands size…”
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    Journal Article