Search Results - "Gnade, B."

Adjustable structural, optical and dielectric characteristics in sol–gel PMMA–SiO2 hybrid films by Morales-Acosta, M.D., Alvarado-Beltrán, C.G., Quevedo-López, M.A., Gnade, B.E., Mendoza-Galván, A., Ramírez-Bon, R.

“…The structural, optical and dielectric characteristics of PMMA–TMSPM–SiO2 hybrid thin films, synthesized by sol–gel, were studied as a function of the molar…”
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Performance and stability of solution-based cadmium sulfide thin film transistors: Role of CdS cluster size and film composition by Salas-Villasenor, A. L., Mejia, I., Sotelo-Lerma, M., Gnade, B. E, Quevedo-Lopez, M. A.

“…Improved carrier mobility and threshold voltage (VT) stability in cadmium sulfide (CdS) thin film transistors (TFTs) were studied and attributed to larger…”
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Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics by Mao, D., Quevedo-Lopez, M.A., Stiegler, H., Gnade, B.E., Alshareef, H.N.

“…The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer…”
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Reliability Assessment of a-IGZO and ZnO Thin Film Transistors (TFTs) to X-ray irradiation by Rodriguez-Davila, R.A., Fernandez-Izquierdo, L., Fink, J., Moise, T., Baumann, R.C., Gnade, B., Quevedo-Lopez, M., Young, C.D.

“…This study presents a detailed analysis of total ionizing dose (TID) effects induced by X-ray irradiation on zinc oxide (ZnO) and Indium-Gallium-Zinc Oxide…”
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Fabrication of Relaxer-Based Piezoelectric Energy Harvesters Using a Sacrificial Poly-Si Seeding Layer by Fuentes-Fernandez, E. M. A., Salomon-Preciado, A. M., Gnade, B. E., Quevedo-Lopez, M. A., Shah, P., Alshareef, H. N.

“…The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr 0.53 ,Ti 0.47 )O 3 –Pb(Zn 1/3 ,Nb 2/3 )O 3 (PZT–PZN) thin…”
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Thin film cadmium telluride charged particle sensors for large area neutron detectors by Murphy, J. W., Smith, L., Calkins, J., Kunnen, G. R., Mejia, I., Cantley, K. D., Chapman, R. A., Sastré-Hernández, J., Mendoza-Pérez, R., Contreras-Puente, G., Allee, D. R., Quevedo-Lopez, M., Gnade, B.

“…Thin film semiconductor neutron detectors are an attractive candidate to replace 3He neutron detectors, due to the possibility of low cost manufacturing and…”
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P-type thin films transistors with solution-deposited lead sulfide films as semiconductor by Carrillo-Castillo, A., Salas-Villasenor, A., Mejia, I., Aguirre-Tostado, S., Gnade, B.E., Quevedo-López, M.A.

“…In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods…”
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Ammonia-free chemically deposited CdS films as active layers in thin film transistors by Arreola-Jardón, G., González, L.A., García-Cerda, L.A., Gnade, B., Quevedo-López, M.A., Ramírez-Bon, R.

“…In this work we have grown CdS thin films using an ammonia-free chemical bath deposition process for the active layer in thin film transistors. The CdS films…”
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Interface characterization of nickel contacts to bulk bismuth tellurium selenide by Iyore, O. D., Lee, T. H., Gupta, R. P., White, J. B., Alshareef, H. N., Kim, M. J., Gnade, B.E.

“…Transmission electron microscopy (TEM) characterization of nickel contacts to bulk bismuth tellurium selenide [Bi2(Te,Se)3] is reported. Samples were prepared…”
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Electrical behavior of p-type PbS-based metal-oxide-semiconductor thin film transistors by Morales-Fernández, I.E., Medina-Montes, M.I., González, L.A., Gnade, B., Quevedo-López, M.A., Ramírez-Bon, R.

“…Chemically deposited lead sulfide (PbS) thin films were used as the semiconductor active layer in common-gated thin film transistors. The PbS films were…”
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Enhancement of the thermoelectric efficiency of PbTe by selective site doping: Effect of group VA impurities by Xiong, K., Longo, R.C., Wang, W., Gupta, R.P., Gnade, B.E., Cho, K.

“…[Display omitted] •DFT results of electronic structures of thermoelectric doped-PbTe are presented.•Group VA impurities act as donors if they replace Pb…”
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Adsorption Kinetics of p-Nitrobenzenethiol Self-Assembled Monolayers on a Gold Surface by Jakubowicz, A, Jia, H, Wallace, R. M, Gnade, B. E

“…The adsorption kinetics of octadecanethiol (ODT) and p-nitrobenzenethiol (NBT) from ethanol solutions has been studied by means of contact angle, optical…”
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Degradation of pentacene deposited on gold, aluminum and parylene surfaces: Impact of pentacene thickness by Martinez-Landeros, V.H., Gutierrez-Heredia, G., Aguirre-Tostado, F.S., Sotelo-Lerma, M., Gnade, B.E., Quevedo-Lopez, M.A.

“…In this work, the impact of film thickness in thermally evaporated pentacene thin films and metal electrodes is studied. In particular, we report electrical…”
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Ferroelectric random access memory based on one-transistor–one-capacitor structure for flexible electronics by Mao, D., Mejia, I., Salas-Villasenor, A.L., Singh, M., Stiegler, H., Gnade, B.E., Quevedo-Lopez, M.A.

“…[Display omitted] ► A FRAM memory cell based on 1T1C compatible with flexible electronic applications is demonstrated. ► P(VDF-TrFE) is used for the…”
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Fatigue characteristics of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for flexible electronics memory applications by Mao, D., Mejia, I., Stiegler, H., Gnade, B.E., Quevedo-Lopez, M.A.

“…Metal-Ferroelectric-Metal (MFM) capacitors based on P(VDF-TrFE) copolymer with high switching polarization are fabricated. Voltage and frequency dependence of…”
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The fabrication of high density nanochannel organic light emitting diodes with reduced charge spreading by Trivedi, K, Bhansali, U S, Gnade, B, Hu, W

“…This study reports fabrication and characterization of nanoscale organic light emitting diodes with reduced charge spreading. Nanoimprint lithography is used…”
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Effect of Sputtered ZnO Layers on Behavior of Thin-Film Transistors Deposited at Room Temperature in a Nonreactive Atmosphere by Medina-Montes, M. I., Lee, S. H., Pérez, M., Baldenegro-Pérez, L. A., Quevedo-López, M. A., Gnade, B., Ramírez-Bon, R.

“…In this work we present the electrical characterization of ZnO-based thin-film transistors fabricated at room temperature. The ZnO films were deposited by…”
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Comparison of neat and photo-crosslinked polyvinylidene fluoride-co-hexafluoropropylene thin film dielectrics formed by spin-coating by Iyore, O.D., Roodenko, K., Winkler, P.S., Noriega, J.R., Vasselli, J.J., Chabal, Y.J., Gnade, B.E.

“…We report the characterization of photo-crosslinked polyvinylidene fluoride-co-hexafluoropropylene (PVDF-HFP) thin film, metal–insulator–metal capacitors…”
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Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors by Quevedo-Lopez, M A, Wondmagegn, W T, Alshareef, H N, Ramirez-Bon, R, Gnade, B E

“…The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and…”
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Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices by Govindarajan, S., Böscke, T. S., Sivasubramani, P., Kirsch, P. D., Lee, B. H., Tseng, H.-H., Jammy, R., Schröder, U., Ramanathan, S., Gnade, B. E.

“…Rare earth (RE) doping (Gd, Er, Dy) of HfO2 reduces leakage current by three orders of magnitude compared with pure HfO2. The key to reducing HfO2 leakage…”
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