Search Results - "Gluschenkov, Oleg"

Energy Density and Temperature Calibration for FEOL Nanosecond Laser Annealing by Sulehria, Yasir, Gluschenkov, Oleg, Willemann, Michael, Chen, Shaoyin

“…Nanosecond (NLA) laser annealing is under consideration for inclusion into mainstream CMOS technology. Lack of suitable ultra-high speed pyrometery and the…”
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Evolution of Surface Morphology and Strain in Low-Temperature AlN Grown by Plasma-Assisted Molecular Beam Epitaxy by Shim, Kyu-Hwan, Myoung, Jaemin, Gluschenkov, Oleg, Kim, Kyekyoon, Kim, Chinkyo, Robinson, Ian K.

“…The evolution of stress-driven surface roughening in low-temperature (LT) grown AlN has been investigated in a wide range of film thicknesses using plasma…”
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Advanced BEOL Materials, Processes, and Integration to Reduce Line Resistance of Damascene Cu, Co, and Subtractive Ru Interconnects by Nogami, Takeshi, Gluschenkov, Oleg, Sulehria, Yasir, Nguyen, Son, Peethala, Brown, Huang, Huai, Shobha, Hosadurga, Lanzillo, Nick, Patlolla, Raghuveer, Sil, Devika, Simon, Andrew, Edelstein, Daniel, Felix, Nelson, Liu, Junjun, Tabata, Toshiyuki, Mazzamuto, Fulvio, Halty, Sebastien, Roze, Fabien, Okuno, Yasutoshi, Uedono, Akira

“…Recent progress in materials, processes and integration schemes to reduce line resistance (Line-R) of damascene Cu and alternative conductors (damascene Co and…”
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Sub- 10^~\Omega -cm2 n-Type Contact Resistivity for FinFET Technology by Niimi, Hiroaki, Zuoguang Liu, Gluschenkov, Oleg, Mochizuki, Shogo, Fronheiser, Jody, Juntao Li, Demarest, James, Chen Zhang, Bei Liu, Jie Yang, Raymond, Mark, Haran, Bala, Huiming Bu, Yamashita, Tenko

“…We report record low 8.4 × 10 -10 Ω-cm 2 n-type S/D contact resistivity with laser-induced solid/liquid phase epitaxy of Si:P inside nano-scale contact…”
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Backside Power Distribution for Nanosheet Technologies Beyond 2nm by Xie, Ruilong, Hong, Wonhyuk, Zhang, Chen, Lee, Jongjin, Brew, Kevin, Johnson, Richard, Lanzillo, Nicholas, Shobha, Hosadurga, Kim, Taesun, Park, Panjae, Mochizuki, Shogo, Saraf, Iqbal, Park, Chanro, Zhuang, Lei, Osborn, Clifford, Li, Wai Kin, Liu, Feng, Sankarapandian, Muthumanickam, Yang, Chung Ju, Li, Juntao, Tierney, Lukas, Pujari, Ruturaj, Sulehria, Yasir, Song, Yuncheng, Zhou, Huimei, Wang, Miaomiao, Belyansky, Michael, Ghosh, Somnath, Zhang, Haojun, Motoyama, Koichi, Sarkar, Debarghya, Kim, Wukang, Chu, Albert, Li, Tao, Carta, Fabio, Gluschenkov, Oleg, Oh, Joongsuk, Malley, Matthew, Chu, Pinlei, Nguyen, Son, Luedders, Katherine, Lee, Joe, Khan, Shahrukh, Chowdhury, Prabudhya Roy, Huang, Huai, Shadman, Abir, Sieg, Stuart, Dechene, Daniel, Edelstein, Daniel, Arnold, John, Yamashita, Tenko, Choi, Kisik, Seo, Kang-ill, Guo, Dechao, Bu, Huiming

“…This paper examines various approaches for integrating backside power distribution network (BSPDN) with nanosheet transistor technologies. Deep Trench Via…”
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Dual beam laser annealing for contact resistance reduction and its impact on VLSI integrated circuit variability by Zuoguang Liu, Gluschenkov, Oleg, Niimi, Hiroaki, Bei Liu, Juntao Li, Demarest, James, Mochizuki, Shogo, Adusumilli, Praneet, Raymond, Mark, Carr, Adra, Shaoyin Chen, Yun Wang, Jagannathan, Hemanth, Yamashita, Tenko

“…Introduction of a dual beam (DB) millisecond (mSec) or nanosecond (nSec laser annealing in contact module results in a drastic reduction of contact…”
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Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics by Min Yang, Gusev, E.P., Meikei Ieong, Gluschenkov, O., Boyd, D.C., Chan, K.K., Kozlowski, P.M., D'Emic, C.P., Sicina, R.M., Jamison, P.C., Chou, A.I.

“…Dependence of CMOS performance on silicon crystal orientation of [100], [111], and [110] has been investigated with the equivalent gate dielectric thickness…”
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Improving FinFET Junctions and Contacts via Laser Annealing by Gluschenkov, Oleg, Sulehria, Yasir, Mochizuki, Shogo, Brew, Kevin

“…Semiconductor industry transitions from the era of planar FETs to the era of three-dimensional (3D) transistors greatly improving performance per footprint. In…”
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Overview of Recent Program on Mechanical Properties of Sea Ice by Cole, David M, Shapiro, Lewis H, Weeks, Wilford F, Byers, Carl, Dempsey, John P, Adamson, Robert M, Petrenko, Victor F, Gluschenkov, Oleg V

“…This paper describes field and laboratory measurements of the evolving physical and mechanical properties of first-year sea ice through a growth season. The…”
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Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy by Yaocheng Liu, Gluschenkov, O., Jinghong Li, Madan, A., Ozcan, A., Byeong Kim, Dyer, T., Chakravarti, A., Chan, K., Lavoie, C., Popova, I., Pinto, T., Rovedo, N., Zhijiong Luo, Loesing, R., Henson, W., Ken Rim

“…Current drive enhancement is demonstrated in sub-40 nm NFETs with strained silicon carbon (Si:C) source and drain using a novel solid-phase epitaxy (SPE)…”
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Crystallization of hafnium-oxide-based ferroelectrics for BEOL integration by Frank, Martin M., Cartier, Eduard A., Lavoie, Christian, Carr, Adra, Jordan-Sweet, Jean L., Jamison, Paul C., Gluschenkov, Oleg, Rozen, John, Narayanan, Vijay

“…We review the crystallization of hafnium-oxide-based ferroelectrics intended for back-end-of-line (BEOL) integration. We discuss furnace, rapid thermal, and…”
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Development and study of atomic nitrogen sources for synthesis of electronic materials by Gluschenkov, Oleg

“…Atomic nitrogen production in pure nitrogen discharges is analyzed from the standpoint of developing efficient atomic nitrogen sources for the synthesis of…”
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External Resistance Reduction by Nanosecond Laser Anneal in Si/SiGe CMOS Technology by Gluschenkov, Oleg, Wu, Heng, Brew, Kevin, Niu, Chengyu, Yu, Lan, Sulehria, Yasir, Choi, Samuel, Durfee, Curtis, Demarest, James, Carr, Adra, Chen, Shaoyin, Willis, Jim, Thanigaivelan, Thirumal, Lie, Fee-li, Kleemeier, Walter, Guo, Dechao

“…We report on a significant pFET external resistance reduction (∼40%) and corresponding 10% R ON decrease by nanosecond laser annealing of S/D structures…”
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Impact of intra-die thermal variation on accurate MOSFET gate-length measurement by Ahsan, I., Schroder, D.K., Nowak, E., Gluschenkov, O., Zamdmer, N., Logan, R.

“…It is known that significant intra-die thermal absorption variation is caused by non-optimized rapid thermal anneal (RTA) conditions and the variation depends…”
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Simulation of 3D Doping by Plasma Immersion Ion Implantation for FinFET or deep Trench Doping Applications. Effect of main Process Parameters and Study of Wall Doping Non-Uniformity as Function of Form Factor and Device Scaling by Torregrosa, Frank, Roux, Benjamin, Ebrish, Mona, Gluschenkov, Oleg, Spiegel, Yohann, Petrescu, A. Filip, Pai, Vinay, Skordas, Spyridon, Jagannathan, Hemanth

“…Understanding and simulating 3D doping performed by Plasma Immersion Ion Implantation on FinFETs or on deep trenches for flash memories or power devices…”
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Advanced BEOL Interconnects by Nogami, Takeshi, Gluschenkov, Oleg, Sulehria, Yasir, Nguyen, Son, Huang, Huai, Lanzillo, Nick A, DeSilva, Anuja, Mignot, Yann, Church, Jennifer, Lee, Joe, Bhosale, Prasad, Patlolla, Raghuveer, Sil, Devika, Shobha, Hosadurga, Kelly, James, Li, Juntao, Demarest, James, Simon, Andrew, Clevenger, Lawrence, Dan Edelstein, Brown Peethala, Haran, Bala

“…Feasibility of single damascene Cu BEOL nanowires with TaN/Ta barrier (i.e. omitting a CVD-Co liner) was studied. Successful Cu gap-fill in 36 nm pitch…”
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Integrated dual SPE processes with low contact resistivity for future CMOS technologies by Heng Wu, Soon-Cheon Seo, Chengyu Niu, Wei Wang, Tsutsui, Gen, Gluschenkov, Oleg, Zuoguang Liu, Petrescu, Alexandru, Carr, Adra, Choi, Sam, Tsai, Stan, Chanro Park, Seshadri, Indira, Desilva, Anuja, Arceo, Abraham, Yang, George, Sankarapandian, Muthumanickam, Prindle, Chris, Akarvardar, Kerem, Durfee, Curtis, Jie Yang, Adusumilli, Praneet, Miao, Bruce, Strane, Jay, Kleemeier, Walter, Raymond, Mark, Choi, Kisik, Fee-li Lie, Yamashita, Tenko, Knorr, Andreas, Gupta, Dinesh, Dechao Guo, Divakaruni, Rama, Huiming Bu, Khare, Mukesh

“…In this study, a manufacturable CMOS dual solid phase epitaxy (SPE) process with pc <; 2.2×10 -9 Q-cm 2 on both NFET and PFET is demonstrated on the hardware…”
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Development and study of atomic nitrogen sources for synthesis of electronic materials by Gluschenkov, Oleg

“…Atomic nitrogen production in pure nitrogen discharges is analyzed from the standpoint of developing efficient atomic nitrogen sources for the synthesis of…”
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High Performance 65nm SOI Transistors Using Laser Spike Annealing by Yamashita, T., Fisher, P.A., Gluschenkov, O., Kimura, H., Ramachandran, R., Mocuta, A.C., Kluth, J., Kawamura, T., Onishi, K., Fried, D., Narasimha, S., Brown, D., Sameer Jain, Miyamoto, K., Freeman, G., Deshpande, S.V., Luning, S., Shih-Fen Huang, Pellerin, J., Kuroda, H.

“…In this paper we present enhancements in transistor performance and manufacturability of a high performance 65nm node SOI transistor by the combination of…”
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Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT by Tsutsui, Gen, Ruqiang Bao, Kwan-yong Lim, Robison, Robert R., Vega, Reinaldo A., Jie Yang, Zuoguang Liu, Miaomiao Wang, Gluschenkov, Oleg, Chun Wing Yeung, Watanabe, Koji, Bentley, Steven, Niimi, Hiroaki, Liu, Derrick, Huimei Zhou, Siddiqui, Shariq, Hoon Kim, Galatage, Rohit, Venigalla, Rajasekhar, Raymond, Mark, Adusumilli, Praneet, Mochizuki, Shogo, Devarajan, Thamarai S., Miao, Bruce, Bei Liu, Greene, Andrew, Shearer, Jeffrey, Montanini, Pietro, Strane, Jay W., Prindle, Christopher, Miller, Eric R., Fronheiser, Jody, Niu, Chengyu C., Kisup Chung, Kelly, James J., Jagannathan, Hemanth, Kanakasabapathy, Sivananda, Karve, Gauri, Fee Li Lie, Oldiges, Philip, Narayanan, Vijay, Hook, Terence B., Knorr, Andreas, Gupta, Dinesh, Guo, Dechao, Divakaruni, Rama, Huiming Bu, Khare, Mukesh

“…Low Ge content SiGe-based CMOS FinFET is one of the promising technologies [1-2] offering solutions for both high performance and low power applications. In…”
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