Search Results - "Glover, Michael D."

3-D Wire Bondless Switching Cell Using Flip-Chip-Bonded Silicon Carbide Power Devices by Seal, Sayan, Glover, Michael D., Mantooth, H. Alan

“…This paper presents a three-dimensional (3-D) wire bondless power module using silicon carbide (SiC) power devices. Commercially available SiC power devices…”
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High-Performance and High-Data-Rate Quasi-Coaxial LTCC Vertical Interconnect Transitions for Multichip Modules and System-on-Package Applications by Decrossas, Emmanuel, Glover, Michael D., Porter, Kaoru, Cannon, Tom, Stegeman, Thomas, Allen-McCormack, Nicholas, Hamilton, Michael C., Mantooth, H. Alan

“…A new design of stripline transition structures and flip-chip interconnects for high-speed digital communication systems implemented in low-temperature cofired…”
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Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems by Mantooth, H. Alan, Glover, Michael D., Shepherd, Paul

“…The current state of wide bandgap device technology is reviewed and its impact on power electronic system miniaturization for a wide variety of voltage levels…”
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A Solution to Press-Pack Packaging of SiC MOSFETS by Nan Zhu, Mantooth, H. Alan, Dehong Xu, Min Chen, Glover, Michael D.

“…This paper proposes a packaging method for SiC MOSFETs that provides a feasible solution of implementing press-pack packaging on SiC MOSFETs to extend the…”
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Nickel-Tin Transient Liquid Phase Bonding Toward High-Temperature Operational Power Electronics in Electrified Vehicles by Sang Won Yoon, Glover, M. D., Shiozaki, K.

“…This paper presents the concept, fabrication, and evaluation for quality and reliability of nickel-tin transient liquid phase (Ni-Sn TLP) bonding that provides…”
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Nanosilver preform assisted die attach for high temperature applications by Seal, Sayan, Glover, Michael D., Mantooth, H. Alan

“…Using sintered silver as a high temperature die attach material has recently evoked much interest. The emergence of pressureless sintering using a silver…”
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Metal Layer Losses in Thin-Film Microstrip on LTCC by Fund, Andrew D., Kuhn, William B., Wolf, J. Ambrose, Eatinger, Ryan J., Porter, Kaoru U., Glover, Michael D., Mantooth, H. Alan

“…Thin-film microstrip transmission lines fabricated using a Ti adhesion layer followed by layered Cu, Pt, and Au films are measured to determine tradeoffs…”
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A UVLO Circuit in SiC Compatible With Power MOSFET Integration by Glover, Michael D., Shepherd, Paul, Francis, A. Matt, Mudholkar, Mihir, Mantooth, Homer Alan, Ericson, Milton Nance, Frank, S. Shane, Britton, Charles L., Marlino, Laura D., McNutt, Ty R., Barkley, Adam, Whitaker, Bret, Lostetter, Alexander B.

“…The design and test of the first undervoltage lock-out circuit implemented in a low-voltage 4H silicon carbide process capable of single-chip integration with…”
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Highly reliable nickel-tin transient liquid phase bonding technology for high temperature operational power electronics in electrified vehicles by Sang Won Yoon, Shiozaki, K., Yasuda, S., Glover, M. D.

“…This paper presents an approach to nickel-tin transient liquid phase (TLP) bonding that provides high reliability for high temperature operational power…”
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Integration of Tantalum Pentoxide Capacitors With Through-Silicon Vias by Tegueu, A. K., Yang Liu, Jacob, S., Glover, M. D., Schaper, L. W., Burkett, S. L.

“…Metal filled through-silicon vias (TSVs) allow devices to be connected using a 3-D approach. Optimizing and refining this technology has been a focus for the…”
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Design, layout, and testing of a silicon carbide-based under voltage lock-out circuit by Glover, Michael D

“…Silicon carbide-based power devices play an increasingly important role in modern power conversion systems. Finding a means to reduce the size and complexity…”
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Application and reliability analysis of sintered silver preforms for die attachment of wide bandgap devices by Seal, Sayan, Glover, Michael D., Mantooth, H. Alan

“…Sintered nanosilver paste has been demonstrated to have superior electrical, mechanical, and thermal properties as compared to other state-of-the-art die…”
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A UVLO Circuit in SiC Compatible With Power MOSFET Integration by Glover, Michael D., Shepherd, Paul, Francis, A. Matt, Mudholkar, Mihir, Mantooth, Homer Alan, Ericson, Milton Nance, Frank, S. Shane, Britton, Charles L., Marlino, Laura D., McNutt, Ty R., Barkley, Adam, Whitaker, Bret, Lostetter, Alexander B.

“…Our design and test of the first undervoltage lock-out circuit implemented in a low voltage 4H silicon carbide process capable of single-chip integration with…”
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A UVLO Circuit in SiC Compatible With Power MOSFET Integration by Glover, Michael D., Shepherd, Paul, Francis, A. Matt, Mudholkar, Mihir, Mantooth, Homer Alan, Ericson, Milton Nance, Frank, S. Shane, Britton, Charles L., Marlino, Laura D., McNutt, Ty R., Barkley, Adam, Whitaker, Bret, Lostetter, Alexander B.

“…This design and test of the first undervoltage lock-out circuit implemented in a low-voltage 4H silicon carbide process capable of single-chip integration with…”
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Flip-chip bonded silicon carbide MOSFETs as a low parasitic alternative to wire-bonding by Seal, Sayan, Glover, Michael D., Wallace, Andrea K., Mantooth, H. Alan

“…This paper presents flip-chip bonding as an alternative to wire-bonding for commercially available silicon carbide (SiC) MOSFETs. A process was developed for…”
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Design and evaluation of press-pack SiC MOSFET by Zhu, Nan, Chen, Min, Xu, Dehong, Mantooth, H. Alan, Glover, Michael D.

“…This paper investigates the advantages of combining press-pack packaging and SiC MOSFETs to extend the application of SiC devices into the high power range…”
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Design, layout, and testing of a silicon carbide-based under voltage lock-out circuit by Glover, Michael D

“…Silicon carbide-based power devices play an increasingly important role in modern power conversion systems. Finding a means to reduce the size and complexity…”
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Broad frequency LTCC vertical interconnect transition for multichip modules and system on package applications by Decrossas, Emmanuel, Glover, Michael D., Porter, Kaoru, Cannon, Tom, Mantooth, H. Alan, Hamilton, M. C.

“…Various stripline structures and flip chip interconnect designs for high-speed digital communication systems implemented in low temperature co-fired ceramic…”
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An integrated gate driver in 4H-SiC for power converter applications by Ericson, M. Nance, Frank, S. Shane, Britton, Charles L., Marlino, Laura D., Janke, Devon D., Ezell, Dianne B., Ryu, Sei-Hyung, Lamichhane, Ranjan, Francis, A. Matt, Shepherd, Paul D., Glover, Michael D., Mantooth, H. Alan, Whitaker, Bret, Cole, Zach, Passmore, Brandon, McNutt, Ty

“…A gate driver fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. This process was optimized for vertical power MOSFET fabrication but…”
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