Search Results - "Glemža, Justinas"

Properties of the surface generation-recombination noise in 1.94 µm GaSb-based laser diodes by Glemža, Justinas, Palenskis, Vilius, Pralgauskaitė, Sandra, Vyšniauskas, Juozas, Matukas, Jonas

“…•Generation-recombination noise in the investigated LDs is caused by surface leakage.•Surface current leakage channel between n+GaSb and p+GaSb contacts…”
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Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes by Glemža, Justinas, Palenskis, Vilius, Geižutis, Andrejus, Čechavičius, Bronislovas, Butkutė, Renata, Pralgauskaitė, Sandra, Matukas, Jonas

“…GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability…”
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Review of Low-Frequency Noise Properties of High-Power White LEDs during Long-Term Aging by Palenskis, Vilius, Matukas, Jonas, Glemža, Justinas, Pralgauskaitė, Sandra

“…Low-frequency noise investigation is a highly sensitive and very informative method for characterization of white nitride-based light-emitting diodes (LEDs) as…”
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Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes by Armalytė, Simona, Glemža, Justinas, Jonkus, Vytautas, Pralgauskaitė, Sandra, Matukas, Jonas, Pūkienė, Simona, Zelioli, Andrea, Dudutienė, Evelina, Naujokaitis, Arnas, Bičiūnas, Andrius, Čechavičius, Bronislovas, Butkutė, Renata

“…Fabry-Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the…”
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Low frequency noise investigation of 2–3μm GaSb-based laser diodes by Glemža, Justinas, Pralgauskaitė, Sandra, Palenskis, Vilius, Matukas, Jonas

“…•Low frequency noise of GaSb-based LD is investigated at forward and reverse biases.•Influence of facet passivation to noise characteristics was…”
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Reliability investigation of light-emitting diodes via low frequency noise characteristics by Pralgauskaitė, Sandra, Palenskis, Vilius, Matukas, Jonas, Glemža, Justinas, Muliuk, Grigorij, Šaulys, Bronius, Trinkūnas, Augustinas

“…•Low frequency optical and electrical noise and reliability of LEDs are investigated.•Spectral and correlation analysis of LEDs optical and electrical noise is…”
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Low-Frequency Noise Characteristics of Quantum Well Structures for NIR Laser Diodes by Armalytė, Simona, Glemža, Justinas, Jonkus, Vytautas, Pralgauskaitė, Sandra, Matukas, Jonas, Pūkienė, Simona, Zelioli, Andrea, Dudutienė, Evelina, Naujokaitis, Arnas, Bičiūnas, Andrius, Čechavičius, Bronislovas, Butkutė, Renata

“…Fabry-Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the…”
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Mid-infrared laser diodes investigation via low-frequency noise spectroscopy and electrical derivative characteristics by Glemza, Justinas, Matukas, Jonas, Pralgauskaite, Sandra, Palenskis, Vilius

“…Electrical noise and electrical derivative (ED) characteristics of different heterostructure GaSb-based type-I mid-infrared laser diodes (LDs) are investigated…”
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Low frequency noise spectroscopy and threshold characteristics of laser diodes by Glemza, Justinas, Matukas, Jonas, Pralgauskaite, Sandra

“…Electrical and optical noise characteristics of multiple-quantum-well distributed feedback InGaAsP laser diodes (LD) are investigated validating low-frequency…”
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Carrier density and mobility fluctuations due to carrier retrapping process in homogeneous semiconductors by Palenskis, Vilius, Glemza, Justinas, Vysniauskas, Juozas, Matukas, Jonas

“…It is shown that the free charge carrier capture-emission process causes both the charge carrier density and mobility fluctuations. In this report we present…”
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Description of the Low-Frequency Noise for Homogeneous Semiconductors by Palenskis, Vilius, Pralgauskaite, Sandra, Matukas, Jonas, Glemza, Justinas

“…Description of the low-frequency noise in semiconductor materials and devices is still a subject of discussions. Here we present research results of the…”
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Low frequency noise study for developing of AlGaAs and GaAsBi QW structures for NIR LDs by Glemza, Justinas, Pralgauskaite, Sandra, Matukas, Jonas, Pukiene, Simona, Zelioli, Andrea, Biciunas, Andrius, Cechavicius, Bronislovas, Nargeliene, Viktorija, Butkute, Renata

“…Low noise characteristics of Fabry-Perot type laser diodes emitting at (780 - 1100) nm wavelengths were investigated for optimization of geometry and…”
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