Search Results - "Glasser, L.A."

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  1. 1

    Macromodeling and Optimization of Digital MOS VLSI Circuits by Matson, M.D., Glasser, L.A.

    “…Power consumption and signal delay are crucial to the design of high-performance VLSI circuits. This paper presents CAD tools for modeling and optimizing…”
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    Journal Article
  2. 2

    Foaming behavior of mixed bovine serum albumin–protamine systems by Glaser, L.A., Paulson, A.T., Speers, R.A., Yada, R.Y., Rousseau, D.

    Published in Food hydrocolloids (2007)
    “…The foaming properties of mixed bovine serum albumin (BSA):protamine systems were investigated as a function of pH (3, 5 and 7) and volume ratio (20:1, 10:1,…”
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    Journal Article
  3. 3

    Electronics technology for low-power computing and wireless communication by Glasser, L.A.

    “…The information age has gone mobile. Over the next two decades, the energy of this rejuvenated information revolution will create the majority of new…”
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    Conference Proceeding
  4. 4

    A road map to ARPA involvement in electronic packaging by Glasser, L.A.

    Published in Computer (Long Beach, Calif.) (01-04-1993)
    “…The application of advanced electronic packaging and interconnect (EP/I) technology by US Department of Defense's Advance Research Projects Agency are…”
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    Journal Article
  5. 5

    Circuit models and applications of the superconducting field-effect transistor by Glasser, L.A.

    Published in IEEE journal of solid-state circuits (01-10-1989)
    “…Static and dynamic models for the superconducting transistor are developed. The models capture the symmetry of the source-drain structure, incorporate the gate…”
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    Journal Article
  6. 6

    The Analog Behavior of Digital Integrated Circuits by Glasser, L.A.

    Published in 18th Design Automation Conference (1981)
    “…The analog behavior of digital VLSI circuits is investigated. A theory based on nonlinear Thevenin equivalent circuits and RC ladder networks is developed. We…”
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    Conference Proceeding
  7. 7

    MOSFET capacitance and conductance in the saturation regime by Glasser, L.A.

    Published in IEEE electron device letters (01-09-1991)
    “…The relationship between capacitance and conductance of a MOSFET is examined in the region where velocity saturation dominates. In this domain it is shown that…”
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    Journal Article
  8. 8

    Picosecond pulse generation with a cw GaAlAs laser diode by Ho, P.-T., Glasser, L. A., Ippen, E. P., Haus, H. A.

    Published in Applied physics letters (01-08-1978)
    “…We report the generation of 20-ps optical pulses at microwave repetition rate from a GaAlAs double-heterostructure diode operating cw at room temperature. The…”
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    Journal Article
  9. 9

    Power distribution techniques for VLSI circuits by Song, W.S., Glasser, L.A.

    Published in IEEE journal of solid-state circuits (01-02-1986)
    “…The onchip power distribution problem for highly scaled technologies is investigated. Metal migration and line resistance problems as well as ways to optimize…”
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    Journal Article
  10. 10

    Critical current gain in superconducting transistor quantum interference devices by Glasser, L.A.

    Published in IEEE transactions on magnetics (01-09-1989)
    “…A superconducting quantum interference device (SQUID) built with superconducting transistors is analyzed. The sensitivity of the critical current of the…”
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    Journal Article
  11. 11

    Prediction of magnetic flux-controlled gate voltage in superconducting field-effect transistors by Glasser, L.A.

    Published in IEEE electron device letters (01-02-1989)
    “…The undirectional model to the superconducting field-effect transistor (SFET) is shown to be thermodynamically unsound. A gate voltage which is controlled by…”
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    Journal Article
  12. 12

    Delay and Power Optimization in VLSI Circuits by Glasser, L.A., Hoyte, L.P.J.

    “…The problem of optimally sizing the transistors in a digital MOS VLSI circuit is examined. Macro-models are developed and new theorems on the optimal sizing of…”
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    Conference Proceeding
  13. 13

    A magnetic power and communication interface for a CMOS integrated circuit by Glasser, L.A., Malamy, A.C., Selvidge, C.W.

    Published in IEEE journal of solid-state circuits (01-08-1989)
    “…Bulk CMOS integrated circuits which receive power and perform all I/O functions exclusively by means of inductive coupling are discussed. Both layers of metal…”
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    Journal Article
  14. 14

    An Analysis of Microwave De-Embedding Errors (Technical Notes) by Glasser, L.A.

    “…Bounds on de-embedding errors are derived. Both measurement errors and "known" load errors are considered. Of particular interest is the determination of error…”
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    Journal Article
  15. 15

    Continuous models for communication density constraints on multiprocessor performance by Glasser, L.A., Zukowski, C.A.

    Published in IEEE transactions on computers (01-06-1988)
    “…Fundamental limits on the communication capabilities of massively parallel multiprocessors are investigated. It is shown that in the limit of machines of…”
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    Journal Article
  16. 16

    Methodology Verification of Hierarchically Described VLSI Circuits by Bain, I.L., Glasser, L.A.

    “…The standard approach to master the complexity of designing VLSI systems is to adopt a set of rules that, when respected, are conducive to correct…”
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    Journal Article
  17. 17

    Frequency limitations in circuits composed of linear devices by Glasser, L.A.

    Published in IEEE transactions on circuits and systems (01-10-1988)
    “…The author investigates limitations on the frequency response of networks constructed out of components specified by their small signal models. Tellegen's…”
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    Journal Article
  18. 18

    Microwave Mode Locking at X Band Using Solid-State Devices by Glasser, L.A., Haus, H.A.

    “…A theory of mode locking in the microwave regime is presented. The use of solid-state microwave devices for this application is described. A system that has…”
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    Journal Article
  19. 19

    The silicon cryosar at microwave frequencies by Glasser, L.A., Kyhl, R.L.

    Published in IEEE transactions on electron devices (01-06-1979)
    “…Microwave and low-frequency measurements are reported on n^{+}-v-n^{+} silicon cryosars fabricated with narrow intrinsic region widths. The low-frequency…”
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    Journal Article
  20. 20

    The stability and passivity of MOSFET device models that use nonreciprocal capacitive elements by Glasser, L.A.

    Published in IEEE transactions on circuits and systems (01-06-1990)
    “…An examination is made of the activity and stability of circuits built from device models formed by a linear active or passive multiport resistor in parallel…”
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    Journal Article