Search Results - "Glaser, Caleb"

Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage by Armstrong, Andrew M., Allerman, Andrew A., Pickrell, Greg W., Crawford, Mary H., Glaser, Caleb E., Smith, Trevor

“…Etched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA = 6 <inline-formula> <tex-math…”
Get full text

Optimization of Step-Etched Junction Termination Extensions for Vertical GaN Devices by Binder, Andrew T., Steinfeldt, Jeffrey, Allerman, Andrew A., Rummel, Brian D., Glaser, Caleb, Yates, Luke, Kaplar, Robert J.

“…This work provides the first demonstration of a multipoint fit from theory to experiment for step-etched junction terminations on vertical gallium nitride…”
Get full text

Etched-and-Regrown GaN pn -Diodes With 1600 V Blocking Voltage by Armstrong, Andrew M., Allerman, Andrew A., Pickrell, Greg W., Crawford, Mary H., Glaser, Caleb E., Smith, Trevor

“…Etched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA = 6 μA/cm2 at 1250 V), excellent forward…”
Get full text

Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes by Binder, Andrew T., Pickrell, Greg W., Allerman, Andrew A., Dickerson, Jeramy R., Yates, Luke, Steinfeldt, Jeffrey, Glaser, Caleb, Crawford, Mary H., Armstrong, Andrew, Sharps, Paul, Kaplar, Robert J.

“…This work provides the first demonstration of vertical GaN Junction Barrier Schottky (JBS) rectifiers fabricated by etch and regrowth of p-GaN. A reverse…”
Get full text

Analysis of ALD Dielectric Leakage in Bulk GaN MOS Devices by Glaser, Caleb E., Binder, Andrew T., Yates, Luke, Allerman, Andrew A., Feezell, Daniel F., Kaplar, Robert J.

“…This study analyzes the ability of various processing techniques to reduce leakage current in vertical GaN MOS devices. Careful analysis is required to…”
Get full text