Search Results - "Gladyshev, Andrey G."
-
1
High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance
Published in IEEE journal of quantum electronics (01-04-2022)“…High power single mode wafer-fused 1300-nm VCSELs with a gain region based on InGaAs/InAlGaAs short period superlattice are fabricated. An InP-based optical…”
Get full text
Journal Article -
2
Fabrication and Characterization of 5.2 um Quantum-Cascade Lasers Grown by Molecular-Beam Epitaxy
Published in 2023 International Conference on Electrical Engineering and Photonics (EExPolytech) (19-10-2023)“…We present the results on the fabrication and time-resolved spectral characterization of 5.2 um range quantum-cascade laser. 40 stages of active region are…”
Get full text
Conference Proceeding -
3
Comparative Analysis of InGaAs/GaAs Quantum Dots Produced by Various Epitaxial Techniques
Published in 2022 International Conference on Electrical Engineering and Photonics (EExPolytech) (20-10-2022)“…We present the results on the formation and micro-photoluminescence studies of In 0.63 Ga 0.37 As/GaAs quantum dots grown by metal-organic vapour-phase epitaxy…”
Get full text
Conference Proceeding -
4
Quantum-Cascade Lasers with U-Shaped Resonator: Single Frequency Generation at Room Temperature
Published in 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) (01-06-2019)“…Summary form only given. Single-frequency generation of the quantum-cascade lasers (QCLs) is the key for many applications including gas analysis and free…”
Get full text
Conference Proceeding -
5
Influence of the doping type on the temperature dependencies of the photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures
Published in Journal of luminescence (01-11-2021)“…The temperature dependencies of photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures with 1550 nm range strained quantum wells have been…”
Get full text
Journal Article -
6
6-mW Single-Mode High-Speed 1550-nm Wafer-Fused VCSELs for DWDM Application
Published in IEEE journal of quantum electronics (01-12-2017)“…This paper presents data on wafer-fused 1550-nm vertical-cavity surface-emitting lasers (VCSELs) based on the active region and distributed Bragg reflectors…”
Get full text
Journal Article -
7
Influence of low temperatures and thermal annealing on the optical properties of InGaPAs quantum dots
Published in Nauchno-tekhnicheskiĭ vestnik informat͡s︡ionnykh tekhnologiĭ, mekhaniki i optiki (01-10-2022)“…The results of the study of the optical properties of low-density InGaPAs quantum dots, as well as the effect of low temperatures and thermal annealing…”
Get full text
Journal Article -
8
15 mW of continuous wave single transverse mode output power from planar 960 nm bottom-emitting VCSELs with multiple tapered oxide layers
Published in 22nd IEEE International Semiconductor Laser Conference (01-09-2010)“…We report planar vertical cavity surface emitting lasers with record 15 mW of continuous wave single transverse mode output power that employ spatially…”
Get full text
Conference Proceeding -
9
Turn-on delay in the mid-infrared quantum-cascade lasers: experiment and numerical simulations
Published in 2021 Conference on Lasers and Electro-Optics (CLEO) (01-05-2021)“…Turn-on delay is measured to be much longer and its pump-current dependence different from theoretical predictions for mid-infrared InP- and InAs-based…”
Get full text
Conference Proceeding