Search Results - "Gladstone, S.M."

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  1. 1

    Limitations on oxide thicknesses in flash EEPROM applications by Runnion, E.F., Gladstone, S.M., Scott, R.S., Dumin, D.J., Lie, L., Mitros, J.

    “…Oxides used in EEPROMs have severe limitations placed on leakage currents due to long data retention time requirements. During write/erase (W/E) cycling,…”
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    Conference Proceeding
  2. 2

    Thickness dependence of stress-induced leakage currents in silicon oxide by Runnion, E.F., Gladstone, S.M., Scott, R.S., Dumin, D.J., Lie, L., Mitros, J.C.

    Published in IEEE transactions on electron devices (01-06-1997)
    “…The thickness dependence of high-voltage stress-induced leakage currents (SILC's) has been measured in oxides with thicknesses between 5 and 11 nm. The SILC's…”
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    Journal Article
  3. 3

    Effect of period and level of infestation of the fall armyworm, Spodoptera frugiperda, on irrigated maize yield by Hruska, A.J, Gladstone, S.M

    Published in The Florida entomologist (01-09-1988)
    “…The effect of period and level of infestation by the fall armyworm (FAW), Spodoptera frugiperda (J. E. Smith) (Lepidoptera: Noctuidae), on irrigated maize, Zea…”
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    Journal Article Conference Proceeding
  4. 4

    Thickness dependence of low-level leakages in thin oxides by Gladstone, S.M., Scott, R.S., Runnion, E.F., Hughes, T.W., Dumin, D.J., Mitros, J.C., Lie, L.

    “…The wearout of 4 nm to 13 nm thick oxides fabricated on n-type and p-type substrates was measured. The interface trap densities, flatband voltage shifts, bulk…”
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    Conference Proceeding
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