Search Results - "Giofre, Rocco"
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1
A High Efficiency and Low Distortion 6 W GaN MMIC Doherty Amplifier for 7 GHz Radio Links
Published in IEEE microwave and wireless components letters (01-01-2017)“…This contribution presents a novel design methodology for Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC) Doherty Power Amplifiers (DPAs)…”
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2
A Doherty Architecture With High Feasibility and Defined Bandwidth Behavior
Published in IEEE transactions on microwave theory and techniques (01-09-2013)“…This paper presents a complete and rigorous theoretical investigation of a Doherty architecture with a novel output combining network. The benefits in terms of…”
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3
An Ultra-Broadband GaN Doherty Amplifier with 83% of Fractional Bandwidth
Published in IEEE microwave and wireless components letters (01-11-2014)“…This letter presents the design and characterization of an ultra-broadband GaN Doherty amplifier with more than an octave bandwidth. The developed architecture…”
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4
A Design Approach for Two Stages GaN MMIC PAs With High Efficiency and Excellent Linearity
Published in IEEE microwave and wireless components letters (01-01-2016)“…A novel design methodology for two stages microwave monolithic integrated circuit (MMIC) power amplifier (PA) is presented. The proposed solution allows to…”
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5
A Design Approach to Maximize the Efficiency vs. Linearity Trade-Off in Fixed and Modulated Load GaN Power Amplifiers
Published in IEEE access (01-01-2018)“…This paper proposes a design method to minimize the phase distortion (AM/PM) in gallium nitride (GaN) power amplifiers (PAs) without significantly worsening…”
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6
15% bandwidth 7 GHz GaN-MMIC Doherty amplifier with enhanced auxiliary chain
Published in Microwave and optical technology letters (01-02-2014)“…ABSTRACT This contribution presents the development and characterization of a GaN Doherty power amplifier for backhaul microwave links in the 6.35–7.35 GHz…”
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7
A Design Strategy for AM/PM Compensation in GaN Doherty Power Amplifiers
Published in IEEE access (01-01-2017)“…This paper presents the theoretical analysis of phase distortion (AM/PM) mechanisms in Gallium Nitride (GaN) Doherty power amplifiers (DPAs) and a novel…”
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8
A 28 GHz MMIC Doherty Power Amplifier in GaN on Si Technology for 5G Applications
Published in 2019 IEEE MTT-S International Microwave Symposium (IMS) (01-06-2019)“…This contribution is focused on the experimental characterization of a Doherty Power Amplifier (DPA) realized on a 100 nm gate length Gallium Nitride on…”
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Conference Proceeding -
9
Asymmetrical Doherty power architecture with an integrated driver stage in the auxiliary branch
Published in International journal of RF and microwave computer-aided engineering (01-07-2014)“…ABSTRACT This contribution presents the analysis, design and characterization of a high gain Doherty power amplifier implementing an integrated Driver stage in…”
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10
A Simple Test to Check the Inherent-Stability Proviso on Field-Effect Transistors
Published in IEEE access (01-01-2018)“…Available techniques for stability analysis of DC solutions, such as the popular Ohtomo test, make the task quite a straightforward one. Such tests are based…”
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11
3-Way Doherty Power Amplifiers: Design Guidelines and MMIC Implementation at 28 GHz
Published in IEEE transactions on microwave theory and techniques (01-05-2023)“…This article presents the design strategy and the implementation of a three-way Doherty power amplifier (DPA3W) to enhance the efficiency at deep power…”
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12
A C-band high-efficiency second-harmonic-tuned hybrid power amplifier in GaN technology
Published in IEEE transactions on microwave theory and techniques (01-06-2006)“…In this paper, the design, fabrication, and test of high-efficiency, high-power C-band harmonic-tuned power amplifiers in GaN technology is reported. The…”
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13
Empowering the Bandwidth of Continuous-Mode Symmetrical Doherty Amplifiers by Leveraging on Fuzzy Logic Techniques
Published in IEEE transactions on microwave theory and techniques (01-07-2020)“…Achieving a fractional bandwidth (FBW) of more than 60% has been a challenging problem for two-way symmetrical Doherty power amplifiers (TW-SDPAs) that are…”
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14
Design and Extensive NPR Characterization of a Highly Linear SatCom GaN MMIC Doherty PA
Published in IEEE transactions on microwave theory and techniques (15-10-2024)“…This article presents the design strategy and extensive noise-to-power ratio (NPR)-focused characterization of a state-of-the-art Doherty power amplifier (DPA)…”
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15
An Efficient and Linear SSPA With Embedded Power Flexibility for Ka -Band Downlink SatCom Applications
Published in IEEE transactions on microwave theory and techniques (01-01-2024)“…This article presents the design, realization, and experimental characterization of a solid-state power amplifier (SSPA) conceived for <inline-formula>…”
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16
A Two-Way GaN Doherty Amplifier for 5G FR2 With Extended Back-Off Range
Published in IEEE microwave and wireless technology letters (Print) (01-03-2024)“…This article presents the design and experimental characterization of a two-way gallium nitride on silicon carbide (GaN-SiC) monolithic Doherty power amplifier…”
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17
32-36-GHz Single-Chip Front-End MMIC Featuring 35-dBm Output Power and 3.2-dB Noise Figure With 60- and 100-nm GaN/Si HEMTs
Published in IEEE transactions on microwave theory and techniques (01-01-2024)“…The design, realization, and test of a <inline-formula> <tex-math notation="LaTeX">Ka </tex-math></inline-formula>-band gallium nitride (GaN) monolithic…”
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18
A 3-Way GaN Doherty Power Amplifier for 28 GHz 5G FR2 Operation
Published in 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023 (11-06-2023)“…This paper presents the design, fabrication, and experimental characterization of a 3-way multi-stage Doherty amplifier working in the 5G NR FR2 bands centered…”
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Conference Proceeding -
19
A Broadband Doherty Power Amplifier for Sub-6GHz 5G Applications
Published in IEEE access (2023)“…This paper presents a novel and accurate procedure for designing a Doherty power amplifier (DPA) for wireless systems. The method is based on a systematic…”
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20
S-Band GaN Single-Chip Front End for Active Electronically Scanned Array With 40-W Output Power and 1.75-dB Noise Figure
Published in IEEE transactions on microwave theory and techniques (01-12-2018)“…The design, realization, and tests of an S-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) single-chip front end (SCFE) is presented…”
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