Search Results - "Gillin, W.P"

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  1. 1

    The effect of deuteration on organic magnetoresistance by Rolfe, N.J., Heeney, M., Wyatt, P.B., Drew, A.J., Kreouzis, T., Gillin, W.P.

    Published in Synthetic metals (01-04-2011)
    “…▶ Three processes affect the efficiency of an OLED with magnetic field. ▶ A hydrogen containing hole transport layer does not affect these processes. ▶ Only…”
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    Journal Article Conference Proceeding
  2. 2
  3. 3

    Low temperature magnetic field effects on the efficiency of aluminium tris(8-hydroxyquinoline) based organic light emitting diodes in the absence of magnetoresistance by Zhang, Sijie, Kreouzis, T., Gillin, W.P.

    Published in Synthetic metals (01-06-2013)
    “…► We studied low temperature organic magnetoresistance measurements. ► We observed changes in efficiency where no change in current was found. ► TTA was found…”
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    Journal Article Conference Proceeding
  4. 4

    Spectroscopic study of Mq 3 (M=Al, Ga, In, q=8-hydroxyquinolinate) at high pressure by Hernández, I., Gillin, W.P., Somerton, M.

    Published in Journal of luminescence (2009)
    “…A high-pressure spectroscopic investigation of OLED materials with generic formula Mq 3 (M=Al, Ga, In, q=8-hydroxyquinolinate) has been carried out. The…”
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    Journal Article
  5. 5

    Field-induced single-ion magnetic behaviour in a highly luminescent Er3+ complex by Coutinho, J.T., Pereira, L.C.J., Martín-Ramos, P., Ramos Silva, M., Zheng, Y.X., Liang, X., Ye, H.Q., Peng, Y., Baker, P.J., Wyatt, P.B., Gillin, W.P.

    Published in Materials chemistry and physics (15-06-2015)
    “…The magnetic properties of a perfluorinated Er3+ complex, with record luminescent properties, have been investigated. [Er(F-TPIP)3] displays thermally…”
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    Journal Article
  6. 6

    Modelling of organic magnetoresistance as a function of temperature using the triplet polaron interaction by Zhang, Sijie, Drew, A.J., Kreouzis, T., Gillin, W.P.

    Published in Synthetic metals (01-04-2011)
    “…▶ The organic magnetoresistance (OMR) data can be fitted using the triplet polaron interaction (TPI) model. ▶ The TPI model includes two independent processes,…”
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    Journal Article Conference Proceeding
  7. 7

    980 nm electroluminescence from ytterbium tris (8-hydroxyquinoline) by Khreis, O.M., Gillin, W.P., Somerton, M., Curry, R.J.

    Published in Organic electronics (01-03-2001)
    “…We have demonstrated a ytterbium tris (8-hydroxyquinoline) based organic light emitting device giving sharp electroluminescence at ∼980 nm, and demonstrated…”
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    Journal Article
  8. 8

    Electroluminescence of organolanthanide based organic light emitting diodes by Curry, R.J, Gillin, W.P

    “…Recent advances in organolanthanide based organic light emitting diodes have lead to the demonstration of infra-red emitting devices. A silicon based organic…”
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    Journal Article
  9. 9

    Infra-red and visible electroluminescence from ErQ based OLEDs by Curry, R.J, Gillin, W.P

    Published in Synthetic metals (01-06-2000)
    “…Organic light emitting diodes have been fabricated using erbium tris(8-hydroxyquinoline) as the emitting layer and N, N′-diphenyl- N,…”
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    Journal Article
  10. 10

    1.5 μm electroluminescence from organic light emitting diodes integrated on silicon substrates by Curry, R.J., Gillin, W.P., Knights, A.P., Gwilliam, R.

    Published in Optical materials (01-06-2001)
    “…We have produced a silicon based organic light emitting diode (OLED) which emits 1.5 μm electroluminescence at room temperature. The emitting layer used was…”
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    Journal Article Conference Proceeding
  11. 11

    Analysis of strain in ultra-thin GaAs/In 0.2Ga 0.8As/GaAs single quantum well structures by channeling technique by Kozanecki, A., Kaczanowski, J., Sealy, B.J., Gillin, W.P.

    “…The strain in single In 0.2Ga 0.8As layers buried in GaAs is studied by means of ion channeling about off-normal crystallographic axes in major planes: 〈110〉…”
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    Journal Article
  12. 12

    Diffusion in semiconductors by Gillin, W.P., Dunstan, D.J.

    Published in Computational materials science (01-04-1998)
    “…Widely varying experimental determinations of diffusion parameters have led to models of solid state diffusion which include a variety of mechanisms. Using…”
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    Journal Article Conference Proceeding
  13. 13
  14. 14

    Control of defects in C +, Ge +, and Er + implanted Si using post amorphization and solid phase regrowth by Cristiano, F., Zhang, J.P., Wilson, R.J., Gillin, W.P., Hemment, P.L.F.

    “…In this paper we report a technique to achieve epitaxial regrowth across phase boundaries (EPIFAB) which annihilates defects in samples implanted with high…”
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    Journal Article
  15. 15

    Erbium in silicon–germanium quantum wells by Naveed, A.T., Huda, M.Q., Abd El-Rahman, K.F., Hartung, J., Evans-Freeman, J.H., Peaker, A.R., Houghton, D.C., Jeynes, C., Gillin, W.P.

    Published in Journal of luminescence (01-12-1998)
    “…Strained Si 1− x Ge x /Si quantum wells have been doped with erbium by implantation. A comparison is made with strained Si 1− x Ge x /Si quantum wells and…”
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    Journal Article Conference Proceeding
  16. 16

    Novel Infrared Emitter for Low Cost Optical Devices by Penna, S., Reale, A., Pizzoferrato, R., Musella, D., Beleffi, G.M.T., Gillin, W.P.

    “…Erbium (III) tris(8-hydroxyquinoline) (ErQ 3 ) solution was deposited on glass substrates using spin-coating processing under high temperature conditions. 1.52…”
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    Conference Proceeding
  17. 17

    Group V interdiffusion in In/sub 0.66/Ga/sub 0.33/As/ In/sub 0.66/Ga/sub 0.33/As/sub 0.7/P/sub 0.3/ quantum well structures by Gillin, W.P., Bradley, I.V., Foo, W.L., Homewood, K.P., Perrin, S.D., Spurdens, P.C.

    “…The diffusion coefficient for arsenic and phosphorous interdiffusion has been measured as a function of temperature in In/sub 0.66/Ga/sub 0.33/As/ In/sub…”
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    Conference Proceeding