Search Results - "Gillin, W.P"
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The effect of deuteration on organic magnetoresistance
Published in Synthetic metals (01-04-2011)“…▶ Three processes affect the efficiency of an OLED with magnetic field. ▶ A hydrogen containing hole transport layer does not affect these processes. ▶ Only…”
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Spectroscopic study of Mq3 (M=Al, Ga, In, q=8-hydroxyquinolinate) at high pressure
Published in Journal of luminescence (01-12-2009)Get full text
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Low temperature magnetic field effects on the efficiency of aluminium tris(8-hydroxyquinoline) based organic light emitting diodes in the absence of magnetoresistance
Published in Synthetic metals (01-06-2013)“…► We studied low temperature organic magnetoresistance measurements. ► We observed changes in efficiency where no change in current was found. ► TTA was found…”
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Spectroscopic study of Mq 3 (M=Al, Ga, In, q=8-hydroxyquinolinate) at high pressure
Published in Journal of luminescence (2009)“…A high-pressure spectroscopic investigation of OLED materials with generic formula Mq 3 (M=Al, Ga, In, q=8-hydroxyquinolinate) has been carried out. The…”
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Field-induced single-ion magnetic behaviour in a highly luminescent Er3+ complex
Published in Materials chemistry and physics (15-06-2015)“…The magnetic properties of a perfluorinated Er3+ complex, with record luminescent properties, have been investigated. [Er(F-TPIP)3] displays thermally…”
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Modelling of organic magnetoresistance as a function of temperature using the triplet polaron interaction
Published in Synthetic metals (01-04-2011)“…▶ The organic magnetoresistance (OMR) data can be fitted using the triplet polaron interaction (TPI) model. ▶ The TPI model includes two independent processes,…”
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980 nm electroluminescence from ytterbium tris (8-hydroxyquinoline)
Published in Organic electronics (01-03-2001)“…We have demonstrated a ytterbium tris (8-hydroxyquinoline) based organic light emitting device giving sharp electroluminescence at ∼980 nm, and demonstrated…”
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Electroluminescence of organolanthanide based organic light emitting diodes
Published in Current opinion in solid state & materials science (2001)“…Recent advances in organolanthanide based organic light emitting diodes have lead to the demonstration of infra-red emitting devices. A silicon based organic…”
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Infra-red and visible electroluminescence from ErQ based OLEDs
Published in Synthetic metals (01-06-2000)“…Organic light emitting diodes have been fabricated using erbium tris(8-hydroxyquinoline) as the emitting layer and N, N′-diphenyl- N,…”
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1.5 μm electroluminescence from organic light emitting diodes integrated on silicon substrates
Published in Optical materials (01-06-2001)“…We have produced a silicon based organic light emitting diode (OLED) which emits 1.5 μm electroluminescence at room temperature. The emitting layer used was…”
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Analysis of strain in ultra-thin GaAs/In 0.2Ga 0.8As/GaAs single quantum well structures by channeling technique
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (1996)“…The strain in single In 0.2Ga 0.8As layers buried in GaAs is studied by means of ion channeling about off-normal crystallographic axes in major planes: 〈110〉…”
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Diffusion in semiconductors
Published in Computational materials science (01-04-1998)“…Widely varying experimental determinations of diffusion parameters have led to models of solid state diffusion which include a variety of mechanisms. Using…”
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Control of defects in C +, Ge +, and Er + implanted Si using post amorphization and solid phase regrowth
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-03-1995)“…In this paper we report a technique to achieve epitaxial regrowth across phase boundaries (EPIFAB) which annihilates defects in samples implanted with high…”
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Erbium in silicon–germanium quantum wells
Published in Journal of luminescence (01-12-1998)“…Strained Si 1− x Ge x /Si quantum wells have been doped with erbium by implantation. A comparison is made with strained Si 1− x Ge x /Si quantum wells and…”
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Novel Infrared Emitter for Low Cost Optical Devices
Published in 2007 9th International Conference on Transparent Optical Networks (01-07-2007)“…Erbium (III) tris(8-hydroxyquinoline) (ErQ 3 ) solution was deposited on glass substrates using spin-coating processing under high temperature conditions. 1.52…”
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Conference Proceeding -
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Group V interdiffusion in In/sub 0.66/Ga/sub 0.33/As/ In/sub 0.66/Ga/sub 0.33/As/sub 0.7/P/sub 0.3/ quantum well structures
Published in 1993 (5th) International Conference on Indium Phosphide and Related Materials (1993)“…The diffusion coefficient for arsenic and phosphorous interdiffusion has been measured as a function of temperature in In/sub 0.66/Ga/sub 0.33/As/ In/sub…”
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