Search Results - "Gilchrist, H L"

Evolution of the band gap and the dominant radiative recombination center versus the composition for ZnSe1-xTex alloys grown by molecular beam epitaxy by BRASIL, M. J. S. P, NAHORY, R. E, TURCO-SANDROFF, F. S, GILCHRIST, H. L, MARTIN, R. J

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Negative differential resistance in AlAs/NiAl/AlAs heterostructures: evidence for size quantization in metals by TABATABAIE, N, SANDS, T, HARBISON, J. P, GILCHRIST, H. L, KERAMIDAS, V. G

“…We report on the first electron transport measurements in (Al,Ga)As/NiAl/(Al,Ga)As semiconductor-metal-semiconductor double heterostructures grown entirely by…”
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ErAs epitaxial layers buried in GaAs: magnetotransport and spin-disorder scattering by ALLEN, S. J, TABATABAIE, N, PALMSTRØM, C. J, HULL, G. W, SANDS, T, DEROSA, F, GILCHRIST, H. L, GARRISON, K. C

“…Magnetotransport measurements show that ErAs epitaxial layers buried in GaAs is a relatively low-density semimetal that orders magnetically at low…”
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Effect of orientation on the Schottky barrier height of thermodynamically stable epitaxial metal/GaAs structures by Palmstro/m, C. J., Cheeks, T. L., Gilchrist, H. L., Zhu, J. G., Carter, C. B., Wilkens, B. J., Martin, R.

“…The use of thermodynamically stable epitaxial metal/GaAs contacts fabricated by molecular‐beam epitaxy has enabled detailed studies of Schottky barrier…”
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Molecular beam epitaxy of ZnSe1-xTex ternary alloys by TURCO-SANDROFF, F. S, NAHORY, R. E, BRAZIL, M. J. S. P, MARTIN, R. J, GILCHRIST, H. L

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Electrical resistivity of thin epitaxial NiAl buried in (Al,Ga)As by TABATABAIE, N, SANDS, T, HARBISON, J. P, GILCHRIST, H. L, FLOREZ, L. T, KERAMIDAS, V. G

“…We present the first measurements of electrical resistivity for NiAl layers in (Al,Ga)As/NiAl/(Al,Ga)As semiconductor/metal/semiconductor monocrystalline…”
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Zn1-yCdySe1-xTex quaternary wide band-gap alloys : molecular beam epitaxial growth and optical properties by BRASIL, M. J. S. P, TAMARGO, M. C, NAHORY, R. E, GILCHRIST, H. L, MARTIN, R. J

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Electrical and optical characterization of back-to-back Schottky (Al,Ga)As/NiAl/(Al,Ga)As molecular beam epitaxially grown double-heterostructure diodes by CHEEKS, T. L, SANDS, T, ANHORY, R. E, HARBISON, J, TABATABAIE, N, GILCHRIST, H. L, WILKENS, B. J, KERAMIDAS, V. G

“…Current-voltage, capacitance-voltage, and internal photoemission measurements of back-to-back Schottky diodes of buried metal (Al,Ga)As/NiAl/(Al,Ga)As double…”
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Design of epitaxial metal/AlAs/GaAs structures for enhancement of the Schottky Barrier height by CHEEKS, T. L, SANDS, T, NAHORY, R. E, HARBISON, J. P, GILCHRIST, H. L, KERAMIDAS, V. G

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Growth of epitaxial rare‐earth arsenide/(100)GaAs and GaAs/rare‐earth arsenide/(100)GaAs structures by Palmstro/m, C. J., Garrison, K. C., Mounier, S., Sands, T., Schwartz, C. L., Tabatabaie, N., Allen, S. J., Gilchrist, H. L., Miceli, P. F.

“…Successful growth of (100)ErAs and (100)LuAs single crystal films on (100)GaAs has been demonstrated. Reflection high‐energy electron diffraction, low‐energy…”
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Metallic quantum wells grown by molecular‐beam epitaxy by Harbison, J. P., Sands, T., Ramesh, R., Tabatabaie, N., Gilchrist, H. L., Florez, L. T., Keramidas, V. G.

“…Ultrathin single crystal buried metal layers of NiAl have been grown within (Al,Ga)As heterostructures. The layers are electrically continuous down to 1 nm in…”
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Evolution of the band gap and the dominant radiative recombination center versus the composition for ZnSe(1-x)Te(x) alloys grown by molecular beam epitaxy by BRASIL, MJSP, Nahory, R E, Turco-Sandroff, F S, Gilchrist, H L, Martin, R J

“…This paper reports a systematic study of the optoelectronic properties of ZnSe(1-x)Te(x) alloys grown by molecular beam epitaxy over the entire range of…”
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Zn1− y Cd y Se1− x Te x quaternary wide band-gap alloys: Molecular beam epitaxial growth and optical properties by Brasil, Maria J. S. P., Tamargo, Maria C., Nahory, R. E., Gilchrist, H. L., Martin, R. J.

“…We report the growth of Zn1−yCdySe1−xTex alloys by molecular beam epitaxy on GaAs substrates. The optical properties and the band structure of this new…”
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Evolution of the band gap and the dominant radiative recombination center versus the composition for ZnSe1− x Te x alloys grown by molecular beam epitaxy by Brasil, M. J. S. P., Nahory, R. E., Turco-Sandroff, F. S., Gilchrist, H. L., Martin, R. J.

“…We report a systematic study of the optoelectronic properties of ZnSe1−xTex alloys grown by molecular beam epitaxy over the entire range of compositions. The…”
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Molecular beam epitaxy of ZnSe1− x Te x ternary alloys by Turco-Sandroff, F. S., Nahory, R. E., Brazil, M. J. S. P., Martin, R. J., Gilchrist, H. L.

“…ZnSe1−xTex ternary alloy has been grown over the entire range of composition by molecular beam epitaxy on GaAs and InP substrates. A precise control of the…”
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Design of epitaxial Metal/AiAs/GaAs structures for enhancement of the schottky barrier height by Cheeks, T. L., Sands, T., Nahory, R. E., Harbison, J. P., Gilchrist, H. L., Keramidas, V. G.

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Deep levels in bulk LEC single crystal IxGa1-xAs by Bao, X. J., Schlesinger, T. E., Bonner, W. A., Nahory, R. E., Gilchrist, H. L., Berry, E., Beam, E. A., Mahajan, S.

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Deep levels in bulk LEC single cyrstal InxGa1-xAs by BAO, X. J, SCHLESINGER, T. E, BONNER, W. A, NAHORY, R. E, GILCHRIST, H. L, BERRY, E, BEAM, E. A, MAHAJAN, S

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Negative differential resistance in AlAs/NiAl/AlAs metal base quantum wells: toward a resonant tunneling transistor by Tabatabaie, N., Sands, T., Harbison, J.P., Gilchrist, H.L., Keramidas, V.G.

“…The authors report the observation of a negative differential resistance region (NDRR) in the axial current-voltage characteristics of a nominally 13-monolayer…”
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Negative transconductance in monocrystalline (Al,Ga)As/NiAl/(Al,Ga)As semiconductor/metal/semiconductor tunneling transistors by Tabatabaie, N., Sands, T., Harbison, J.P., Gilchrist, H.L., Cheeks, T.L., Florez, L.T., Keramidas, V.G.

“…The authors present the three-terminal transport characteristics of a resonant-tunneling semiconductor-metal-semiconductor (SMS) structure. The buried metal…”
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