Search Results - "Gila, B.P."

Valence and conduction band offsets in AZO/Ga2O3 heterostructures by Carey, Patrick H., Ren, F., Hays, David C., Gila, B.P., Pearton, S.J., Jang, Soohwan, Kuramata, Akito

“…We report on the determination of band offsets in rf-sputtered Aluminum Zinc Oxide (AZO)/single crystal β-Ga2O3 (AZO/Ga2O3) heterostructures using X-Ray…”
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Band offsets in sputtered Sc2O3/InGaZnO4 heterojunctions by Hays, David C., Gila, B.P., Pearton, S.J., Thorpe, Ryan, Ren, F.

“…We measured the band offsets of sputtered Sc2O3 on thin film InGaZnO4 (IGZO) using X-Ray Photoelectron Spectroscopy and obtained the bandgaps of the materials…”
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Growth and Characterization of GaN Nanowires for Hydrogen Sensors by Johnson, Jason L., Choi, Yongho, Ural, Ant, Lim, Wantae, Wright, J.S., Gila, B.P., Ren, F., Pearton, S.J.

“…We report on the growth and characterization of high-quality GaN nanowires for hydrogen sensors. We grew the GaN nanowires by catalytic chemical vapor…”
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Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection by Kang, B.S., Kim, S., Ren, F., Gila, B.P., Abernathy, C.R., Pearton, S.J.

“…W/Pt contacted GaN Schottky diodes show forward current changes of >1 mA at low bias(3 V) in the temperature range 350–600 °C when the measurement ambient is…”
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AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress by Douglas, E.A., Chang, C.Y., Cheney, D.J., Gila, B.P., Lo, C.F., Lu, Liu, Holzworth, R., Whiting, P., Jones, K., Via, G.D., Kim, Jinhyung, Jang, Soohwan, Ren, Fan, Pearton, S.J.

“…AlGaN/GaN High Electron Mobility Transistors (HEMTs) with various gate lengths have been step-stressed under both on- and off-state conditions. On-state, high…”
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Comparison of Pt/GaN and Pt/4H-SiC gas sensors by Kim, Jihyun, Gila, B.P., Abernathy, C.R., Chung, G.Y., Ren, F., Pearton, S.J.

“…The characteristics of Pt/GaN and Pt/4H-SiC Schottky diodes as gas sensors were measured as a function of temperature and ambient. Both types of diode…”
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Ir-based diffusion barriers for Ohmic contacts to p-GaN by Voss, L.F., Stafford, L., Gila, B.P., Pearton, S.J., Ren, F.

“…Ir-based electrical contacts to p-type GaN have been fabricated and characterized. Both GaN//Ni/Au/Ir/Au and GaN//Ni/Ir/Au contact structures were deposited,…”
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GaN electronics for high power, high temperature applications by Pearton, S.J., Ren, F., Zhang, A.P., Dang, G., Cao, X.A., Lee, K.P., Cho, H., Gila, B.P., Johnson, J.W., Monier, C., Abernathy, C.R., Han, J., Baca, A.G., Chyi, J.-I., Lee, C.-M., Nee, T.-E., Chuo, C.-C., Chu, S.N.G.

“…A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors and GaN…”
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AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing by Kang, B.S., Suku Kim, Ren, F., Gila, B.P., Abernathy, C.R., Pearton, S.J.

“…The characteristics of Pt/GaN Schottky diodes and Sc/sub 2/O/sub 3//AlGaN/GaN metal-oxide semiconductor (MOS) diodes as hydrogen and ethylene gas sensors and…”
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Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO by Ip, K, Gila, B.P, Onstine, A.H, Lambers, E.S, Heo, Y.W, Baik, K.H, Norton, D.P, Pearton, S.J, Kim, S, LaRoche, J.R, Ren, F

“…The role of UV ozone cleaning on the characteristics of Pt contacts on n-type (n∼1017cm−3) bulk single-crystal zinc oxide (ZnO) is reported. The contacts are…”
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Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs by Gillespie, J.K., Fitch, R.C., Sewell, J., Dettmer, R., Via, G.D., Crespo, A., Jenkins, T.J., Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J.

“…The low temperature (100/spl deg/C) deposition of Sc 2 O 3 or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz,…”
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Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO by Lim, Wantae, Voss, Lars, Khanna, Rohit, Gila, B.P., Norton, D.P., Pearton, S.J., Ren, F.

“…CH4/H2-based discharges are attractive for dry etching of single crystal ZnO because of their non-corrosive nature. We show that substitution of C2H6 for CH4…”
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Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77K by Herrero, Andrew M., Gerger, A.M., Gila, B.P., Pearton, S.J., Wang, Hung-Ta, Jang, S., Anderson, T., Chen, J.J., Kang, B.S., Ren, F., Shen, H., LaRoche, Jeffrey R., Smith, Kurt V.

“…The use of cryogenic temperatures (77K) during Au Schottky contact deposition onto n-GaAs produces an increase in barrier height from 0.73eV for room…”
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Band offsets in ITO/Ga2O3 heterostructures by Carey, Patrick H., Ren, F., Hays, David C., Gila, B.P, Pearton, S.J., Jang, Soohwan, Kuramata, Akito

“…•We measured the band offsets of ITO on Ga2O3, a promising wide bandgap semiconductor for solar-blind detectors and power electronics.•The band alignment is…”
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Band alignment of Al2O3 with (−201) β-Ga2O3 by Carey, Patrick H., Ren, F., Hays, David C., Gila, B.P., Pearton, S.J., Jang, Soohwan, Kuramata, Akito

“…X-Ray Photoelectron Spectroscopy was used to determine the valence band offset at Al2O3/β-Ga2O3 heterointerfaces. The Al2O3 was deposited either by Atomic…”
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Gate breakdown characteristics of MgO/GaN MOSFETs by Cho, Hyun, Lee, K.P., Gila, B.P., Abernathy, C.R., Pearton, S.J., Ren, F.

“…Molecular beam epitaxy deposited MgO shows low interface state densities (2–3 × 10 11 cm −2 eV −1) on GaN and shows excellent long-term stability in MOS…”
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Influence of gate oxide thickness on Sc2O3/GaN MOSFETs by Cho, Hyun, Lee, K.P., Gila, B.P., Abernathy, C.R., Pearton, S.J., Ren, F.

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Schottky rectifiers fabricated on free-standing GaN substrates by Johnson, J.W., LaRoch, J.R., Ren, F., Gila, B.P., Overberg, M.E., Abernathy, C.R., Chyi, J.-I., Chuo, C.C., Nee, T.E., Lee, C.M., Lee, K.P., Park, S.S., Park, Y.J., Pearton, S.J.

“…GaN Schottky rectifiers have been fabricated on free-standing substrates and on epi/substrate structures. Forward turn-on voltages were as low as 3 V at 25°C…”
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Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics by Ren, F, Abernathy, C.R, MacKenzie, J.D, Gila, B.P, Pearton, S.J, Hong, M, Marcus, M.A, Schurman, M.J, Baca, A.G, Shul, R.J

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ZrSiOx/IGZO heterojunctions band offsets determined by X-ray photoelectron spectroscopy by Hays, David C., Gila, B.P., Pearton, S.J., Ren, F.

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