Search Results - "Gierałtowska, Sylwia"

Regularly arranged ZnO/TiO2, HfO2, and ZrO2 core/shell hybrid nanostructures - towards selection of the optimal shell material for efficient ZnO-based UV light emitters by Gierałtowska, Sylwia, Zaleszczyk, Wojciech, Putkonen, Matti, Zasada, Dariusz, Korona, Krzysztof P., Norek, Małgorzata

“…Luminescent properties of ZnO/TiO2, ZnO/HfO2, and ZnO/ZrO2 core/shell hybrid nanotubes (NTs) with the shell thickness varying between 9 and 40 nm were studied…”
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Electrical properties of isotype and anisotype ZnO/4H-SiC heterojunction diodes by Taube, Andrzej, Sochacki, Mariusz, Kwietniewski, Norbert, Werbowy, Aleksander, Gierałtowska, Sylwia, Wachnicki, Łukasz, Godlewski, Marek, Szmidt, Jan

“…Electrical properties of isotype n-ZnO/n-4H-SiC and anisotype n-ZnO/p-4H-SiC heterojunction diodes have been investigated and compared. The influence of the…”
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Characterization of dielectric layers grown at low temperature by atomic layer deposition by Gieraltowska, Sylwia, Wachnicki, Lukasz, Witkowski, Bartlomiej S., Mroczynski, Robert, Dluzewski, Piotr, Godlewski, Marek

“…Dielectric films, such as hafnium dioxide (HfO2), aluminum oxide (Al2O3), zirconium dioxide (ZrO2), titanium dioxide (TiO2) and their composite layers are…”
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Investigations of Structural and Electrical Properties of ALD Films Formed with the Ozone Precursor by Seweryn, Aleksandra, Lawniczak-Jablonska, Krystyna, Kuzmiuk, Piotr, Gieraltowska, Sylwia, Godlewski, Marek, Mroczynski, Robert

“…The continuous development of ALD thin films demands ongoing improvements and changes toward fabricating materials with tailored properties that are suitable…”
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Atomic Layer Deposition of HfO2 Films Using TDMAH and Water or Ammonia Water by Gieraltowska, Sylwia, Wachnicki, Lukasz, Dluzewski, Piotr, Witkowski, Bartlomiej S., Godlewski, Marek, Guziewicz, Elzbieta

“…Atomic layer deposition of HfO2 from TDMAH and water or ammonia water at different temperatures below 400 °C is studied. Growth per cycle (GPC) has been…”
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Crystal Lattice Recovery and Optical Activation of Yb Implanted into β-Ga2O3 by Sarwar, Mahwish, Ratajczak, Renata, Ivanov, Vitalii Yu, Gieraltowska, Sylwia, Wierzbicka, Aleksandra, Wozniak, Wojciech, Heller, René, Eisenwinder, Stefan, Guziewicz, Elżbieta

“…β-Ga2O3 is an ultra-wide bandgap semiconductor (Eg~4.8 eV) of interest for many applications, including optoelectronics. Undoped Ga2O3 emits light in the UV…”
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Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films by Szymańska, Magdalena, Gierałtowska, Sylwia, Wachnicki, Łukasz, Grobelny, Marcin, Makowska, Katarzyna, Mroczyński, Robert

“…•Structural and electrical characterization of HfOx and HfOxNy thin films.•Analysis of the influence of deposition process parameters on properties of…”
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Enhanced Luminescence of Yb3+ Ions Implanted to ZnO through the Selection of Optimal Implantation and Annealing Conditions by Ratajczak, Renata, Guziewicz, Elzbieta, Prucnal, Slawomir, Mieszczynski, Cyprian, Jozwik, Przemysław, Barlak, Marek, Romaniuk, Svitlana, Gieraltowska, Sylwia, Wozniak, Wojciech, Heller, René, Kentsch, Ulrich, Facsko, Stefan

“…Rare earth-doped zinc oxide (ZnO:RE) systems are attractive for future optoelectronic devices such as phosphors, displays, and LEDs with emission in the…”
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Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structures by Król, Krystian, Sochacki, Mariusz, Taube, Andrzej, Kwietniewski, Norbert, Gierałtowska, Sylwia, Wachnicki, Łukasz, Godlewski, Marek, Szmidt, Jan

“…In this paper a ZrO2/SiO2/4H‐SiC dielectric system for potential application as gate dielectric for SiC MOSFETs is investigated. An enhanced breakdown…”
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High-k oxides by atomic layer deposition—Applications in biology and medicine by Godlewski, Marek, Gierałtowska, Sylwia, Wachnicki, Łukasz, Pietuszka, Rafał, Witkowski, Bartłomiej S., Słońska, Anna, Gajewski, Zdzisław, Godlewski, Michał M.

“…Wide band gap oxides grown by atomic layer deposition (ALD) are intensively studied for applications as insulators (gate oxides in field effect transistors)…”
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Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices by Mroczyński, Robert, Taube, Andrzej, Gierałtowska, Sylwia, Guziewicz, Elżbieta, Godlewski, Marek

“…► Feasibility of application of double-gate dielectric stacks with ALD layers in NVSM was investigated. ► Significant improvement in retention at elevated…”
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Electrical characterization of ZnO/4H-SiC n-p heterojunction diode by Kwietniewski, Norbert, Masłyk, Monika, Werbowy, Aleksander, Taube, Andrzej, Gierałtowska, Sylwia, Wachnicki, Łukasz, Sochacki, Mariusz

“…The structure and electrical properties of zinc oxide (ZnO) thin films fabricated by atomic layer deposition (ALD) as well as electrical properties of…”
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Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks by Taube, Andrzej, Mroczyński, Robert, Korwin-Mikke, Katarzyna, Gierałtowska, Sylwia, Szmidt, Jan, Piotrowska, Anna

“…In this work, we report on effects of post-deposition annealing on electrical characteristics of metal–insulator–semiconductor (MIS) structures with HfO2/SiO2…”
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Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO 2 /SiO 2 /4H‐SiC Metal‐Oxide Semiconductor Structures by Król, Krystian, Sochacki, Mariusz, Taube, Andrzej, Kwietniewski, Norbert, Gierałtowska, Sylwia, Wachnicki, Łukasz, Godlewski, Marek, Szmidt, Jan

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Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures by Pietruszka, Rafal, Witkowski, Bartlomiej Slawomir, Luka, Grzegorz, Wachnicki, Lukasz, Gieraltowska, Sylwia, Kopalko, Krzysztof, Zielony, Eunika, Bieganski, Piotr, Placzek-Popko, Ewa, Godlewski, Marek

“…Selected properties of photovoltaic (PV) structures based on n-type zinc oxide nanorods grown by a low temperature hydrothermal method on p-type silicon…”
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Enhancing GaN Nanowires Performance Through Partial Coverage with Oxide Shells (Small 44/2024) by Szymon, Radoslaw, Zielony, Eunika, Sobanska, Marta, Stachurski, Tomasz, Reszka, Anna, Wierzbicka, Aleksandra, Gieraltowska, Sylwia, Zytkiewicz, Zbigniew R.

“…UV Optoelectronics In article number 2401139, Radoslaw Szymon and co‐workers report on the performance enhancement of GaN nanowires achieved through partial…”
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Enhancing GaN Nanowires Performance Through Partial Coverage with Oxide Shells by Szymon, Radoslaw, Zielony, Eunika, Sobanska, Marta, Stachurski, Tomasz, Reszka, Anna, Wierzbicka, Aleksandra, Gieraltowska, Sylwia, Zytkiewicz, Zbigniew R.

“…Core‐shell gallium nitride (GaN)‐based nanowires offer noteworthy opportunities for innovation in high‐frequency opto‐ and microelectronics. This work delves…”
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Defect accumulation in β-Ga2O3 implanted with Yb by Sarwar, Mahwish, Ratajczak, Renata, Mieszczynski, Cyprian, Wierzbicka, Aleksandra, Gieraltowska, Sylwia, Heller, René, Eisenwinder, Stefan, Wozniak, Wojciech, Guziewicz, Elżbieta

“…Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (β-Ga2O3), is a complex process. This paper…”
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Atomic Layer Deposition of HfO 2 Films Using TDMAH and Water or Ammonia Water by Gieraltowska, Sylwia, Wachnicki, Lukasz, Dluzewski, Piotr, Witkowski, Bartlomiej S, Godlewski, Marek, Guziewicz, Elzbieta

“…Atomic layer deposition of HfO from TDMAH and water or ammonia water at different temperatures below 400 °C is studied. Growth per cycle (GPC) has been…”
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Crystal Lattice Recovery and Optical Activation of Yb Implanted into β-Ga 2 O 3 by Sarwar, Mahwish, Ratajczak, Renata, Ivanov, Vitalii Yu, Gieraltowska, Sylwia, Wierzbicka, Aleksandra, Wozniak, Wojciech, Heller, René, Eisenwinder, Stefan, Guziewicz, Elżbieta

“…β-Ga O is an ultra-wide bandgap semiconductor (E ~4.8 eV) of interest for many applications, including optoelectronics. Undoped Ga O emits light in the UV…”
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