Search Results - "Gibbons, James F."

Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method by Li, Yiming, Mann, David, Rolandi, Marco, Kim, Woong, Ural, Ant, Hung, Steven, Javey, Ali, Cao, Jien, Wang, Dunwei, Yenilmez, Erhan, Wang, Qian, Gibbons, James F, Nishi, Yoshio, Dai, Hongjie

“…Single-walled carbon nanotubes (SWNT) are grown by a plasma enhanced chemical vapor deposition (PECVD) method at 600 °C. The nanotubes are of high quality as…”
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Molecular characterization of blaESBL-producing Escherichia coli cultured from pig farms in Ireland by Wang, Juan, Gibbons, James F, McGrath, Kathleen, Bai, Li, Li, Fengqin, Leonard, Finola C, Stephan, Roger, Fanning, Séamus

“…To characterize ESBL-encoding Escherichia coli cultured from pigs and their plasmids carrying these genes following conjugation into recipient strains. Six…”
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Patterns of antimicrobial resistance in pathogenic Escherichia coli isolates from cases of calf enteritis during the spring-calving season by Gibbons, James F., Boland, Fiona, Buckley, James F., Butler, Francis, Egan, John, Fanning, Séamus, Markey, Bryan K., Leonard, Finola C.

“…Neonatal enteritis is a common condition of young calves and can be caused by pathogenic strains of Escherichia coli. We hypothesised that on-farm…”
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Fabrication and analysis of deep submicron strained-Si n-MOSFET's by Rim, K., Hoyt, J.L., Gibbons, J.F.

“…Deep submicron strained-Si n-MOSFETs were fabricated on strained Si/relaxed Si/sub 0.8/Ge/sub 0.2/ heterostructures. Epitaxial layer structures were designed…”
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Growth and Processing of Relaxed-Si 1-x Ge x /Strained-Si Structures for Metal-Oxide Semiconductor Applications by Welser, Jeffrey, Judy L. Hoyt, Judy L. Hoyt, James F. Gibbons, James F. Gibbons

“…Epitaxial growth and processing issues related to strained-Si metal-oxide semiconductor field effect transistor (MOSFET) fabrication are discussed. The…”
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Molecular characterization of bla ESBL -producing Escherichia coli cultured from pig farms in Ireland by Wang, Juan, Gibbons, James F., McGrath, Kathleen, Bai, Li, Li, Fengqin, Leonard, Finola C., Stephan, Roger, Fanning, Séamus

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Diffusion of silicon in gallium arsenide using rapid thermal processing: experiment and model by GREINER, M. E, GIBBONS, J. F

“…Rapid thermal processing was used to diffuse Si into GaAs from a thin elemental source. Several encapsulants were applied. The diffusion was found to be…”
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Off-Campus Higher Education Engineering Instruction Using Videotape. Final Report by Gibbons, James F

“…This document presents the final report of a project to evaluate the effectiveness of using videotape television to present graduate level engineering courses…”
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A 14% efficient nonaqueous semiconductor/liquid junction solar cell by GIBBONS, J. F, COGAN, G. W, GRONET, C. M, LEWIS, N. S

“…We describe the most efficient semiconductor/liquid junction solar cell reported to date. Under W-halogen (ELH) illumination, the device is a 14% efficient…”
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Range-Energy Relations for Protons in Heavy Substrates by Gibbons, James F.

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Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy/p-Si HBTs by Singh, D.V, Hoyt, J.L, Gibbons, J.F

“…p-Si/n-Si1-yCy/p-Si heterojunction bipolar transistors with varying carbon fractions in the base were grown by rapid thermal chemical vapor deposition (RTCVD),…”
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CONDUCTIVITY AND HALL MOBILITY OF ION-IMPLANTED SILICON IN SEMI-INSULATING GALLIUM ARSENIDE by Sansbury, James D., Gibbons, James F.

“…Chromium-doped semi-insulating gallium arsenide has been successfully doped n-type by ion implantation of silicon. Annealing studies are presented which show…”
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Bandgap and transport properties of Si1-xGex by analysis of nearly ideal Si/Si1-xGex/Si heterojunction bipolar transistors by KING, C. A, HOYT, J. L, GIBBONS, J. F

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Periodic Dependence of the Electronic Stopping Cross Section for Energetic Heavy Ions in Solids by El-Hoshy, Ahmed H., Gibbons, James F.

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Si/Si1-xGex heterojunction bipolar transistors produced by limited reaction processing by KING, C. A, HOYT, J. L, GRONET, C. M, GIBBONS, J. F, SCOTT, M. P, TURNER, J

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Application of limited reaction processing to atomic layer epitaxy: Growth of cadmium telluride using diisopropyl telluride and dimethyl cadmium by Emerson, Robert M., Hoyt, Judy L., Gibbons, James F.

“…A new thin film growth technique is introduced which combines the advantages of atomic layer epitaxy and limited reaction processing. Using this technique, the…”
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MA-3 applications of scanning CW laser and electron beams for silicon device processing by Gibbons, J.F.

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Ion implantation in semiconductors-Part I: Range distribution theory and experiments by Gibbons, J.F.

“…Ion implantation in semiconductors provides a doping technique with several potential advantages over more conventional doping methods. Among the most…”
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Transconductance enhancement in deep submicron strained Si n-MOSFETs by Rim, K., Hoyt, J.L., Gibbons, J.F.

“…We report the first measurements on deep submicron strained-Si n-MOSFETs. In spite of the high channel doping and vertical effective fields, electron mobility…”
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Electrical and material quality of Si1-xGex/Si p-N heterojunctions produced by limited reaction processing by KING, C. A, HOYT, J. L, NOBLE, D. B, GRONET, C. M, GIBBONS, J. F, SCOTT, M. P, KAMINS, T. I, LADERMAN, S. S

“…Si1-xGex/Si p-N heterojunctions prepared by a chemical vapor deposition technique, limited reaction processing (LRP) were characterized using DC electrical…”
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