Fabrication and characterisation of a double-clamped beam structure as a control gate for a high-speed non-volatile memory device

[Display omitted] •A suspended double-clamped beam for a NV-Memory is fabricated and characterised.•The recipe developed to suspend the beam structure shows a high selectivity rate.•Once biased, the beam pulls-in but due to the short-range forces pull-out was missing.•Short-range forces such as the...

Full description

Saved in:

Bibliographic Details
Published in:	Microelectronic engineering Vol. 114; pp. 22 - 25
Main Authors:	García-Ramírez, M.A., Ghiass, A.M., Moktadir, Z., Tsuchiya, Y., Mizuta, H.
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 01-02-2014 Elsevier
Subjects:	Aluminum Applied sciences Beams (structural) Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science; rheology Data storage Deposition Electronics Exact sciences and technology Gates High speed Hybrid devices Integrated circuits Integrated circuits by function (including memories and processors) Materials science Memory devices Meters Methods of deposition of films and coatings; film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Molecular, atomic, ion, and chemical beam epitaxy Non-volatile memories Physics Plasma processes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Short-range forces Van der Waals forces Hybrid devices Plasma processes Van der Waals forces Non-volatile memories Short-range forces Suspended structure Plasma assisted processing Numerical method IV-VI compound Implementation Microelectronic fabrication Non volatile memory High speed Material testing Photolithography Dry etching Dry process Capacitive transducer Micromachining Aluminium Chemical vapor deposition Wet process Silicon oxides Low pressure Integrated circuit Van der Waals interaction Numerical simulation Electron beam evaporation
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	[Display omitted] •A suspended double-clamped beam for a NV-Memory is fabricated and characterised.•The recipe developed to suspend the beam structure shows a high selectivity rate.•Once biased, the beam pulls-in but due to the short-range forces pull-out was missing.•Short-range forces such as the van der Waals are stronger when in contact (Al/SiO2).•A relationship to overcome such forces is obtained through 2D-FEM analysis. We report the fabrication and characterisation of a suspended double-clamped beam structure that is implemented as a movable control gate within a hybrid high-speed non-volatile memory device. This structure features a foundation of SiO2/Si layers over which a poly-Si layer (sacrificial) is deposited by using a low-pressure chemical vapour deposition (LPCVD) and as a movable control gate, an aluminium (Al) layer is deposited by using an e-beam evaporator. The Al layer is patterned with double-clamped beam structures by using photolithography and through a combination of wet and dry etching processes, the structures are successfully suspended and characterised by using a C–V meter. From the structure characterisation, the pull-in curve is successfully obtained and due to unexpected large short-range forces such as the van der Waals forces, the pull-out curve is not observed. In order to clarify this issue, a numerical analysis is performed in which the structural materials under test shown the influence of such short-range forces on the structure and a solution to override them is proposed.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 ObjectType-Article-1 ObjectType-Feature-2
ISSN:	0167-9317 1873-5568
DOI:	10.1016/j.mee.2013.09.002