Trap Analysis of Zn- and C-Doped 2.1eV AlGaInP Irradiated by 3MeV Protons

The impact of 3 MeV proton irradiation on Zinc- and Carbon doped AlGaInP was compared. Full bandgap characterization via DLTS and DLOS revealed several trap states at EV + 0.7 eV, EV + 1.0 eV, EV + 1.9 eV with an additional trap state observed after irradiation at EV + 0.4 eV. The EV + 1.9 eV state...

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Bibliographic Details
Published in:	Conference record of the IEEE Photovoltaic Specialists Conference p. 1
Main Authors:	Kasher, Tal, Ghadi, Hemant J., Hart, John T., Bittner, Zachary S., Espenlaub, Andrew, Derkacs, Daniel, Miller, Nate, Grassman, Tyler J., Ringel, Steven A.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 09-06-2024
Subjects:	Carbon Photonic band gap Photovoltaic systems Protons Radiation effects
Online Access:	Get full text
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Summary:	The impact of 3 MeV proton irradiation on Zinc- and Carbon doped AlGaInP was compared. Full bandgap characterization via DLTS and DLOS revealed several trap states at EV + 0.7 eV, EV + 1.0 eV, EV + 1.9 eV with an additional trap state observed after irradiation at EV + 0.4 eV. The EV + 1.9 eV state was found to be dominant in both trap concentration and trap introduction rate. The carrier removal rate was characterized and found to match the trap introduction for Zn- but not C-doping. Comprehensive defect characterization as a result of radiation damage is useful for informing the future design of radiation tolerant device design.
ISSN:	2995-1755
DOI:	10.1109/PVSC57443.2024.10749346